MS. JENNIFER Y LU, PHARMD
Pharmacy at Mckee Rd, San Jose, CA

License number
California 50002
Category
Pharmacy
Type
Pharmacist
Address
Address 2
1993 Mckee Rd, San Jose, CA 95116
41982 Via San Carlos, Fremont, CA 94539
Phone
(408) 254-6392
(408) 254-6494 (Fax)
(510) 573-5077

Personal information

See more information about JENNIFER Y LU at radaris.com
Name
Address
Phone
Jennifer Lu
1012 Highlight Dr, West Covina, CA 91791
Jennifer Lu
4927 Lowry Ct, Union City, CA 94587
Jennifer Lu
4074 Fabian Way STE 7, Palo Alto, CA 94303
Jennifer Lu
5376 Duesenberg Dr, San Jose, CA 95123
Jennifer Lu
325 S Rabe Ave, Fresno, CA 93727

Professional information

See more information about JENNIFER Y LU at trustoria.com
Jennifer Lu Photo 1
Recruiter At Lam Research

Recruiter At Lam Research

Position:
Recruiter at Lam Research
Location:
San Mateo, California
Industry:
Human Resources
Work:
Lam Research since Mar 2013 - Recruiter Ericsson - San Jose, CA Jan 2013 - Feb 2013 - Technical University Relations Recruiter (contractor) Hitachi Data Systems - Santa Clara, CA Jun 2011 - Jan 2013 - Talent Acquisition/University Relations Associate Cal State East Bay University Aug 2009 - Aug 2011 - Intercollegiate Women's Soccer Player Pantronix Corporation Dec 2010 - Mar 2011 - Administrative Assistant SanDisk Jun 2010 - Aug 2010 - Field Marketing Intern Cal Poly Pomona Univeristy Aug 2007 - Aug 2009 - Intercollegiate Women's Soccer Player
Education:
California State Polytechnic University-Pomona
Bachelors, Business Administration, Management and Operations
California State University-Hayward
Bachelors, Marketing and Supply Chain Management
San Mateo High School


Jennifer Lu Photo 2
Administrative Assistant At Ucsd Neurosciences

Administrative Assistant At Ucsd Neurosciences

Location:
Greater New York City Area
Industry:
Hospital & Health Care
Work:
UCSD Neurosciences - La Jolla, CA Jun 2010 - Jun 2011 - Administrative Assistant Nordstrom - San Jose, CA Jul 2008 - Sep 2008 - Sales Associate
Education:
Columbia University School of Nursing 2013 - 2016
BSN, MSN, Family Nurse Practitioner
University of California, San Diego 2007 - 2011
Bachelors, Human Biology, Human Development
Interests:
Healthcare, Nursing, Patient Care.
Languages:
English, Mandarin, Spanish
Certifications:
BLS for Healthcare Providers with AED, American Heart Association


Jennifer Lu Photo 3
Fully Undercut Resist Systems Using E-Beam Lithography For The Fabrication Of High Resolution Mr Sensors

Fully Undercut Resist Systems Using E-Beam Lithography For The Fabrication Of High Resolution Mr Sensors

US Patent:
2002016, Nov 14, 2002
Filed:
May 10, 2001
Appl. No.:
09/853345
Inventors:
Robert Fontana - San Jose CA, US
Jordan Katine - San Jose CA, US
Jennifer Lu - San Jose CA, US
Scott MacDonald - San Jose CA, US
Michael Rooks - Briarcliff Manor NY, US
Hugo Santini - San Jose CA, US
International Classification:
G11B005/39
US Classification:
360/313000, 029/603140
Abstract:
A suspended resist bridge suitable for lithographically patterning MR sensors having trackwidths narrower than 0.2 micron is fabricated using the method of the present invention. First, PMGI is spun onto a substrate to form a first thin resist layer. Next, PMMA is spun onto the first resist layer to form a second resist layer. The PMMA layer is exposed to an electron beam to pattern the trackwidth of the MR sensors. E-beam exposed PMMA is then developed in an IPA solution. The resist structure is then placed in a basic solution for dissolving PMGI, which results in a fully undercut resist bridge that is used for patterning the MR sensors.


Jennifer Lu Photo 4
Photolithographic Process For Extreme Resolution Of Track Width Definition Of A Read Head

Photolithographic Process For Extreme Resolution Of Track Width Definition Of A Read Head

US Patent:
2002018, Dec 19, 2002
Filed:
Aug 12, 2002
Appl. No.:
10/217921
Inventors:
Jennifer Lu - San Jose CA, US
Scott MacDonald - San Jose CA, US
Hugo Emilio Santini - San Jose CA, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classification:
G11B005/127, B05D005/12, B05D001/36, H04R031/00, B05D001/32
US Classification:
029/603150, 427/264000, 427/058000, 427/272000, 427/407100, 029/603070, 029/603180
Abstract:
A bilayer mask employed for lift off has a top strip which bridges between first and second bilayer portions and is completely undercut so that when one or more materials is sputter deposited the materials do not form fences abutting recessed edges of a bottom layer in undercuts below a top layer. Sacrificial protective layers are formed on a sensor and lead layers for protecting these components while overlapping portions of these materials on the top of the sensor formed during deposition can be removed by ion beam sputtering, after which the sacrificial protective layers can be removed by ion milling or reactive ion etching.


Jennifer Lu Photo 5
Planarization In An Encapsulation Process For Thin Film Surfaces

Planarization In An Encapsulation Process For Thin Film Surfaces

US Patent:
7223350, May 29, 2007
Filed:
Mar 29, 2002
Appl. No.:
10/109929
Inventors:
Ping-Wei Chang - San Jose CA, US
Brad Lee Jackson - San Diego CA, US
Bulent Nihat Kurdi - San Jose CA, US
Jennifer Lu - San Jose CA, US
Dennis Richard McKean - San Jose CA, US
Eun Kyoung Row - San Jose CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B44C 1/22
US Classification:
216 22
Abstract:
A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.


Jennifer Lu Photo 6
Improved Planarization Process For Producing Carriers With Low Step Height

Improved Planarization Process For Producing Carriers With Low Step Height

US Patent:
2006023, Oct 19, 2006
Filed:
Jun 21, 2006
Appl. No.:
11/425666
Inventors:
Ping-Wei Chang - San Jose CA, US
Brad Jackson - San Diego CA, US
Bulent Kurdi - San Jose CA, US
Jennifer Lu - San Jose CA, US
Dennis McKean - San Jose CA, US
Eun Row - San Jose CA, US
International Classification:
G11B 5/60
US Classification:
360235800
Abstract:
A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.


Jennifer Lu Photo 7
Head Shock Resistance And Head Load/Unload Protection For Reducing Disk Errors And Defects, And Enhancing Data Integrity Of Disk Drives

Head Shock Resistance And Head Load/Unload Protection For Reducing Disk Errors And Defects, And Enhancing Data Integrity Of Disk Drives

US Patent:
6995952, Feb 7, 2006
Filed:
Mar 12, 2001
Appl. No.:
09/804105
Inventors:
Norbert A. Feliss - Sunnyvale CA, US
Yiyun Huang - Milpitas CA, US
Jennifer Lu - San Jose CA, US
Wing Tsang Tang - Palo Alto CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/60
US Classification:
3602353
Abstract:
A slider in a disk drive is shock-protected with an overcoat layer of either metal or polymer directly on the areas of the slider that are prone to contact the disk when the slider is loaded off the platform, or when the slider is shocked while in operation over the data zone of the disk. The material used to form the layer absorbs shock and reduces wear, and is bonded or sputtered to the head in a region other than the pads of the air bearing surface. This region is typically the reactive ion etched (RIE) surface area and is slightly below the pads of the air bearing surface of the head. In an alternate version of the invention, the slider is protected by covering only the edges of the slider with a suitable material. Finally, the entire slider may be encased with the overcoating except for the pads of the air bearing surface.


Jennifer Lu Photo 8
Nanostructures And Methods Of Making The Same

Nanostructures And Methods Of Making The Same

US Patent:
7052618, May 30, 2006
Filed:
Jan 28, 2004
Appl. No.:
10/766639
Inventors:
Nicolas J. Moll - Woodside CA, US
Daniel B. Roitman - Menlo Park CA, US
Jennifer Q. Lu - San Jose CA, US
Assignee:
Agilent Technologies, Inc. - Palo Alto CA
International Classification:
B44C 1/22
US Classification:
216 11, 216 41, 430322, 977700, 977773
Abstract:
Nanostructures and methods of making the same are described. In one aspect, a film including a vector polymer comprising a payload moiety is formed on a substrate. The film is patterned. Organic components of the patterned film are removed to form a payload-comprising nanoparticle.


Jennifer Lu Photo 9
Method For Producing A Transducer Slider With Tapered Edges

Method For Producing A Transducer Slider With Tapered Edges

US Patent:
7236328, Jun 26, 2007
Filed:
Jan 10, 2001
Appl. No.:
09/758939
Inventors:
Jennifer Lu - San Jose CA, US
Dennis Richard McKean - San Jose CA, US
Cherngye Hwang - San Jose CA, US
Shi Ning - San Jose CA, US
Assignee:
Hitachi Global Storage Netherlands, B.V. - Amsterdam
International Classification:
G11B 15/64
US Classification:
3602351, 3602352, 3602353, 3602354, 3602355
Abstract:
The present invention relates to a method for producing a transducer slider. The method involves first coating a substrate with a radiation-sensitive layer and exposing the radiation-sensitive layer to radiation according to an intensity pattern. Preferably, the intensity pattern is provided using a grayscale mask. Once the image is developed into the radiation-sensitive layer, the image is transferred into the substrate to form a transducer slider having a surface profile comprising a tapered edge. In the alternative or in addition, the surface profile may comprise a rounded corner. The invention also relates to a structure for forming a transducer slider.


Jennifer Lu Photo 10
Contrast Enhanced Photolithography

Contrast Enhanced Photolithography

US Patent:
7022452, Apr 4, 2006
Filed:
Sep 4, 2002
Appl. No.:
10/234931
Inventors:
Jennifer Lu - San Jose CA, US
Assignee:
Agilent Technologies, Inc. - Palo Alto CA
International Classification:
G03F 7/004, G03F 7/012, G03F 7/30
US Classification:
430156, 430157, 430162, 4302731, 430326, 430512
Abstract:
Contrast enhanced photolithography methods and devices formed by the same are described. In accordance with these methods, a photoresist layer is formed on a substrate. A contrast enhancing system including a solution or dispersion of a photobleachable dye is formed on the photoresist layer. The photoresist layer is exposed through an imaging pattern and through the contrast enhancing system to radiation having a wavelength between about 230 nm and about 300 nm. The contrast enhancing layer is removed, and the photoresist layer is developed to form a photoresist pattern on the substrate. The contrast enhancing system may be removed and the photoresist layer may be developed in a single process step or in different process steps.