JEFFREY NOLAND MILLER
Pilots at Snell Ln, Los Altos, CA

8089152, Jan 3, 2012

Oct 31, 2006

11/589988

Jeffrey Miller - Los Altos Hills CA, US

Nanosys, Inc. - Palo Alto CA

H01L 23/46

257746, 257E5104

Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.

2013020, Aug 15, 2013

Jan 17, 2013

13/743983

Massachusetts Institute of Technology - , US
Klavs F. Jens - Lexington MA, US
Jeffrey N. Miller - Los Altos Hills CA, US
Ronald L. Moon - Atherton CA, US

Lumileds Lighting US, LLC - San Jose CA
Massachusetts Institute of Technology - Cambridge MA

H01L 33/06

257 13

A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.

4883770, Nov 28, 1989

Jan 17, 1989

7/298794

Gottfried H. Dohler - Palo Alto CA
Ghulam Hasnain - Mtn. View CA
Jeffrey N. Miller - Los Altos CA

Hewlett-Packard Company - Palo Alto CA

H01L 2120, H01L 21203

437110

A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.

7209283, Apr 24, 2007

Apr 7, 2004

10/819666

Falgun D. Patel - Pacifica CA, US
Jeffrey N. Miller - Los Altos Hills CA, US

Avago Technologies Fiber IP (Singapore) Pte. Ltd. - Singapore

H01S 3/00

35933721

A flattened gain amplifier has a waveguide with a core doped with at least one species of rare earth ion. The rare earth ion has a gain profile with a first gain in a first wavelength band and a second gain in a second wavelength band. The flattened gain amplifier also has a first grating and a reflective element optically coupled to the core. The positions of the first grating and reflective element along the length define a first amplifying length and a second amplifying length. The ratio of the first amplifying length to the second amplifying length is about equal to the ratio of the second gain to the first gain.

2007002, Feb 8, 2007

Aug 4, 2005

11/197010

Steven Lester - Palo Alto CA, US
Virginia Robbins - Los Gatos CA, US
Jeffrey Miller - Los Altos Hills CA, US
Scott Corzine - Sunnyvale CA, US

H01L 33/00

257079000

Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.

2010017, Jul 15, 2010

Feb 4, 2010

12/700713

Moungi G. Bawendi - Boston MA, US
Jason Heine - Cambridge MA, US
Klavs F. Jensen - Lexington MA, US
Jeffrey N. Miller - Los Altos Hills CA, US
Ronald L. Moon - Atherton CA, US

Massachusetts Institute of Technology - Cambridge MA
Lumileds Lighting US, LLC - San Jose CA

H01J 99/00

313503

A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.

5376229, Dec 27, 1994

Oct 5, 1993

8/131835

Jeffrey N. Miller - Los Altos Hills CA
Steven D. Lester - Palo Alto CA
Danny E. Mars - Los Altos CA

H01L 21306, B44C 122

156651

A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.

7473941, Jan 6, 2009

Aug 15, 2005

11/203917

Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US
Jeffrey N. Miller - Los Altos Hills CA, US
David P. Bour - Cupertino CA, US

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

H01L 33/00

257102, 257104

A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

6953702, Oct 11, 2005

May 16, 2002

10/151631

Jeffrey N. Miller - Los Altos Hills CA, US
Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US

Agilent Technologies, Inc. - Palo Alto CA

H01L021/20

438 22, 438 35

Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.

2009023, Sep 17, 2009

Dec 9, 2008

12/331150

Francisco LEON - Palo Alto CA, US
Francesco LEMMI - Sunnyvale CA, US
Jeffrey MILLER - Los Altos Hills CA, US
David DUTTON - San Jose CA, US
David P. STUMBO - Belmont CA, US

NANOSYS, Inc. - Palo Alto CA

H01L 29/66, H01L 21/306, H01L 21/28

257 9, 438706, 438745, 438585, 257E21219, 257E29168, 257E2119, 977762, 977938

The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.