DR. JEE Y KIM, OD
Optometry at Vermont Ave, Los Angeles, CA
License number
California OPT 9019 TPA
Category
Optometry
Type
Optometrist
Address
Address
978 S Vermont Ave, Los Angeles, CA 90006
Phone
(213) 736-0205
(213) 368-0504 (Fax)
(213) 368-0504 (Fax)
Personal information
See more information about JEE Y KIM at radaris.comName
Address
Phone
41380 Balaclava Dr, Bermuda Dunes, CA 92203
411 S Danbrook Dr, Anaheim, CA 92804
41619 Balaclava Dr, Bermuda Dunes, CA 92203
4322 Rawhide Way, Oceanside, CA 92057
4306 Fairway Dr, Lakewood, CA 90712
Professional information
At Roger
Position:
management position at business Korea, designer at Roger, designer at Superfad, designer at Stardust, designer at Motion Theory
Location:
Greater Los Angeles Area
Industry:
Motion Pictures and Film
Work:
business Korea
- Seoul, Korea since Sep 2011
-
management position
Roger
since Dec 2010
-
designer
Superfad
since Feb 2010
-
designer
Stardust
since Oct 2009
-
designer
Motion Theory
since May 2009
-
designer
LustreLA
Nov 2009 - Nov 2009
-
designer
Roger
Jun 2009 - Jul 2009
-
designer
Education:
Otis College of Art and Design 2006 - 2008
Skills:
Storyboarding, Motion Graphics, Animation, After Effects, Maya, Compositing, Visual Effects, Mental Ray, Computer Animation, Illustrator, 3D, Texturing, Graphic Design
Assistant Staff Analyst, Hs At Los Angeles County
Position:
Assistant Staff Analyst, HS at Los Angeles County
Location:
Greater Los Angeles Area
Industry:
Government Administration
Work:
Los Angeles County
-
Assistant Staff Analyst, HS
Jee Y Kim, Los Angeles CA - OD (Doctor of Optometry)
Specialties:
Optometry
Address:
978 S Vermont Ave, Los Angeles 90006
(213) 736-0205 (Phone), (213) 368-0504 (Fax)
(213) 736-0205 (Phone), (213) 368-0504 (Fax)
Languages:
English
Jee Young Kim, Los Angeles CA
Specialties:
Optometrist
Address:
978 S Vermont Ave, Los Angeles, CA 90006
Solar Cell Employing An Enhanced Free Hole Density P-Doped Material And Methods For Forming The Same
US Patent:
2012031, Dec 20, 2012
Filed:
Aug 30, 2012
Appl. No.:
13/599591
Inventors:
Ahmed Abou-Kandil - Elmsford NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Mohamed Saad - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 31/075
US Classification:
136255
Abstract:
A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of Hand the inert gas.
Cmos Transistors With Stressed High Mobility Channels
US Patent:
8354694, Jan 15, 2013
Filed:
Aug 13, 2010
Appl. No.:
12/855738
Inventors:
Stephen W. Bedell - Wappingers Falls NY, US
Jee H. Kim - Los Angeles CA, US
Siegfried L. Maurer - Stormville NY, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US
Jee H. Kim - Los Angeles CA, US
Siegfried L. Maurer - Stormville NY, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/66
US Classification:
257192, 257342
Abstract:
A p-type field effect transistor (PFET) having a compressively stressed channel and an n-type field effect transistor (NFET) having a tensilely stressed channel are formed. In one embodiment, a silicon-germanium alloy is employed as a device layer, and the source and drain regions of the PFET are formed employing embedded germanium-containing regions, and source and drain regions of the NFET are formed employing embedded silicon-containing regions. In another embodiment, a germanium layer is employed as a device layer, and the source and drain regions of the PFET are formed by implanting a Group IIIA element having an atomic radius greater than the atomic radius of germanium into portions of the germanium layer, and source and drain regions of the NFET are formed employing embedded silicon-germanium alloy regions. The compressive stress and the tensile stress enhance the mobility of charge carriers in the PFET and the NFET, respectively.
Photovoltaic Devices With An Interfacial Germanium-Containing Layer And Methods For Forming The Same
US Patent:
2012015, Jun 21, 2012
Filed:
Dec 15, 2010
Appl. No.:
12/968490
Inventors:
Tze-Chiang Chen - Yorktown Heights NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Mohamed Saad - White Plains NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Mohamed Saad - White Plains NY, US
Assignee:
EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 31/0264, H01L 31/18
US Classification:
136261, 438 69, 257E31001
Abstract:
A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.
Photovoltaic Devices With An Interfacial Band-Gap Modifying Structure And Methods For Forming The Same
US Patent:
2012003, Feb 9, 2012
Filed:
Aug 4, 2010
Appl. No.:
12/850272
Inventors:
Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US
Assignee:
EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 31/108, H01L 31/18
US Classification:
136255, 438 92, 977750, 977734, 257E31065
Abstract:
A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
Compositionally-Graded Band Gap Heterojunction Solar Cell
US Patent:
2012003, Feb 9, 2012
Filed:
Aug 4, 2010
Appl. No.:
12/849966
Inventors:
Stephen W. Bedell - Wappingers Falls NY, US
Harold J. Hovel - Katonah NY, US
Daniel A. Inns - Palo Alto CA, US
Jee H. Kim - Los Angeles CA, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US
Harold J. Hovel - Katonah NY, US
Daniel A. Inns - Palo Alto CA, US
Jee H. Kim - Los Angeles CA, US
Alexander Reznicek - Mount Kisco NY, US
Devendra K. Sadana - Pleasantville NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 31/0352, H01L 31/18
US Classification:
136255, 438 72, 257E31032
Abstract:
A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.
Student At University Of Southern California
Location:
Greater Los Angeles Area
Industry:
Management Consulting
Education:
University of Southern California 2006 - 2008