Inventors:
James R. Adams - Colorado Springs CO
James C. Weaver - Colorado Springs CO
Assignee:
United Technologies Corporation - Hartford CT
International Classification:
H01L 2100
Abstract:
Polycrystalline silicon resistors are formed by reducing the initial thickness of a poly layer to a magnitude such that the etch end point of the lightly doped resistors is equal to the etch end point of the heavily doped interconnection.