James P Stephenson
Land Surveyors in Salt Lake City, UT
License number
Utah 181833-9925
Issued Date
Jan 1, 1911
Expiration Date
Dec 31, 1999
Category
Engineer/Land Surveyor
Type
Engineer in Training - Obsolete
Address
Address
Salt Lake City, UT
Personal information
See more information about James P Stephenson at radaris.comName
Address
Phone
465 Wildwood Dr, Brigham City, UT 84302
4592 Taylor Ave, Ogden, UT 84403
6208 S 1350 E, South Ogden, UT 84405
456 S 300 E, Cedar City, UT 84720
175 600, Nephi, UT 84648
Professional information
Maintenance Associate At Walmart
Position:
Maintenance Associate at Walmart
Location:
Salt Lake City, Utah
Industry:
Retail
Work:
Walmart
since Apr 2010
-
Maintenance Associate
AT&T
Feb 2009 - Apr 2010
-
Customer Service Rep I
Receivable Management Services
May 2009 - Oct 2009
-
Application Specialist
Convergys Corporation
Jan 2009 - May 2009
-
Customer Service and Problem Resolution Rep
CSU-Pueblo Art Department
Oct 2006 - Jul 2007
-
Art Gallery Technician
Education:
Colorado State University-Pueblo 2006 - 2008
B.F.A, Art/ Photography Otero Junior College 2004 - 2006
A.A, General Education
B.F.A, Art/ Photography Otero Junior College 2004 - 2006
A.A, General Education
Skills:
Floor maintenance, sales floor experience, Forklift Operator, Photoshop, Customer Service, Cashiering, Inventory Control, Pallet Jack, Distribution Center Operations, Inventory Management, Data Entry, Loss Prevention, Retail Sales, Invoicing, Customer Satisfaction, Cash Register, Computer Maintenance, Computer Repair, Building Maintenance, Computer Hardware, Process Scheduler, Maintenance & Repair, Supervisory Skills
Interests:
Art, Photography, Ceramics, Food, Cooking
Honor & Awards:
Eagle Scout, National Honor Roll 2003/2004
James Stephenson - Salt Lake City, UT
Work:
Wal-Mart Stores
Sales Associate AT&T Mobility
Customer Service Rep I Receivable Management Services
Application Specialist Convergys Corporation
Customer Service and Problem Resolution Rep CSU-Pueblo Library
Cataloging Assistant CSU-Pueblo Art Department
Art Gallery Technician Light
Sound Technician, Otero Junior College
Sales Associate AT&T Mobility
Customer Service Rep I Receivable Management Services
Application Specialist Convergys Corporation
Customer Service and Problem Resolution Rep CSU-Pueblo Library
Cataloging Assistant CSU-Pueblo Art Department
Art Gallery Technician Light
Sound Technician, Otero Junior College
Education:
Colorado State University-Pueblo - Pueblo, CO
B.F.A. in Art/ Photography Otero Junior College - La Junta, CO
A.A. in General Education
B.F.A. in Art/ Photography Otero Junior College - La Junta, CO
A.A. in General Education
Non-Volatile Magnetic Memory Device
US Patent:
2010002, Jan 28, 2010
Filed:
Oct 6, 2009
Appl. No.:
12/574097
Inventors:
James Stephenson - Salt Lake City UT, US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - , US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - , US
International Classification:
G11C 11/18, G01R 33/02, G11C 11/14, H01L 29/82
US Classification:
365170, 324252, 365171, 257421, 324251, 257E29323
Abstract:
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line. The multiple magnetic elements are arranged such that remnant magnetic field stored in them can be cumulatively sensed. In another embodiment, the magnetic element is arranged to be magnetized in a single general direction, but is shaped such that magnetic flux lines emanate from it in different directions. The different directions are arranged to direct flux lines through the sensing region of a sensor, which measures their cumulative effect.
Non-Volatile Magnetic Memory Device
US Patent:
7616477, Nov 10, 2009
Filed:
May 2, 2008
Appl. No.:
12/114539
Inventors:
James Stephenson - Salt Lake City UT, US
Bruce Shipley - Albuquerque NM, US
Dan Carothers - Merrimack NH, US
Bruce Shipley - Albuquerque NM, US
Dan Carothers - Merrimack NH, US
Assignee:
Micromem Technologies, Inc. - Toronto
International Classification:
G11C 11/14
US Classification:
365171, 365209, 365145, 365158, 365170
Abstract:
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line.
Non-Volatile Magnetic Memory Device
US Patent:
7376007, May 20, 2008
Filed:
Jun 8, 2006
Appl. No.:
11/449027
Inventors:
James Stephenson - Salt Lake City UT, US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - Merrimack NH, US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - Merrimack NH, US
Assignee:
Micromem Technologies, Inc. - Toronto, Ontario
International Classification:
G11C 11/14
US Classification:
365171, 365209, 365145, 365158, 365170
Abstract:
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line.
Non-Volatile Ferromagnetic Memory Having Sensor Circuitry Shared With Its State Change Circuitry
US Patent:
7257021, Aug 14, 2007
Filed:
Dec 26, 2006
Appl. No.:
11/645160
Inventors:
Richard M. Lienau - Pecos NM, US
James Craig Stephenson - Salt Lake City UT, US
James Craig Stephenson - Salt Lake City UT, US
Assignee:
Pageant Technologies, Inc. - Toronto, Ontario
Estancia Limited
Estancia Limited
International Classification:
G11C 11/14
US Classification:
365171, 365145, 365158, 36518907
Abstract:
A ferromagnetic memory cell is disclosed having a base (), oriented in a horizontal plane, a bit (), made of a ferromagnetic material, and a sense/write line (), positioned proximate the bit () sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit () has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.
Non-Volatile Ferromagnetic Memory Having Sensor Circuitry Shared With Its State Change Circuitry
US Patent:
7187579, Mar 6, 2007
Filed:
Mar 23, 2006
Appl. No.:
11/386947
Inventors:
Richard M. Lienau - Pecos NM, US
James Craig Stephenson - Salt Lake City UT, US
James Craig Stephenson - Salt Lake City UT, US
Assignee:
Pageant Technologies, Inc. - Toronto
Estancia Limited - Providenciales
Estancia Limited - Providenciales
International Classification:
G11C 11/14
US Classification:
365171, 365145, 365158
Abstract:
A ferromagnetic memory cell is disclosed having a base (), oriented in a horizontal plane, a bit (), made of a ferromagnetic material, and a sense/write line (), positioned proximate the bit () sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit () has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.
Fault Detection Using Combined Reflectometry And Electronic Parameter Measurement
US Patent:
2011018, Jul 28, 2011
Filed:
Jan 19, 2011
Appl. No.:
13/009694
Inventors:
Michael Lee Haugen - Alpine UT, US
Michael Paul Masquelier - Park City UT, US
James Craig Stephenson - Salt Lake City UT, US
Michael Paul Diamond - Sandy UT, US
Steven Andrew Kerr - West Valley City UT, US
Michael Paul Masquelier - Park City UT, US
James Craig Stephenson - Salt Lake City UT, US
Michael Paul Diamond - Sandy UT, US
Steven Andrew Kerr - West Valley City UT, US
Assignee:
LIVEWIRE TEST LABS, INC. - Salt Lake City UT
International Classification:
G01R 31/02
US Classification:
324543
Abstract:
Systems and methods for detecting a fault in an electronic conductor are provided. Electronic parameter measurements are combined with reflectometry profiles to determine when faults are present on the electronic conductor.
Non-Volatile Magnetic Memory Device
US Patent:
7110312, Sep 19, 2006
Filed:
Oct 19, 2001
Appl. No.:
10/039296
Inventors:
James Stephenson - Salt Lake City UT, US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - Merrimack NH, US
Bruce Shipley - Lee's Summit MO, US
Dan Carothers - Merrimack NH, US
Assignee:
Micromem Technologies Inc. - Toronto
International Classification:
G11C 7/02
US Classification:
365209, 365145, 365158, 365170, 365171
Abstract:
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second direction, corresponding to first and second orientations of the memory cell. A sensor is provided to determine the direction in which the segments are magnetized and thereby the orientation of the cell. The segments are oriented such that the magnetic flux fields created by their respective remnant magnetic fields have a cumulative effect at a sensing region of the sensor. The cumulative effect allows a less sensitive sensor to be used than in known device. In various embodiments, the magnetic element can have a number of linear segments or a curved profile. In another embodiment, multiple magnetic elements are magnetized by a single write line.
Non-Volatile Ferromagnetic Memory Having Sensor Circuitry Shared With Its State Change Circuitry
US Patent:
7023727, Apr 4, 2006
Filed:
Jun 15, 2001
Appl. No.:
10/258289
Inventors:
Richard M. Lienau - Pecos NM, US
James Craig Stephenson - Salt Lake City UT, US
James Craig Stephenson - Salt Lake City UT, US
Assignee:
Pageant Technologies, Inc. - Toronto
Estancia Limited - Providenciales
Estancia Limited - Providenciales
International Classification:
G11C 11/14
US Classification:
365171, 365145, 365158
Abstract:
A ferromagnetic memory cell is disclosed having a base (), oriented in a horizontal plane, a bit (), made of a ferromagnetic material, and a sense/write line (), positioned proximate the bit () sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit () has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.