JAMES E SHORT
Engineers in Washington
License number
Pennsylvania PE049131E
Category
Engineers
Type
Professional Engineer
Address
Address
2
Washington
Monongahela, PA 15063
Monongahela, PA 15063
Professional information
Advanced Insulated Gate Bipolar Transistor Gate Drive
US Patent:
7570101, Aug 4, 2009
Filed:
Feb 27, 2008
Appl. No.:
12/037991
Inventors:
James Evans Short - Monongahela PA, US
Shawn Michael West - West Mifflin PA, US
Robert J. Fabean - Donora PA, US
Shawn Michael West - West Mifflin PA, US
Robert J. Fabean - Donora PA, US
Assignee:
The United States of America as represented by the United States Department of Energy - Washington DC
International Classification:
H03K 17/60
US Classification:
327432, 327478
Abstract:
A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.