JAMES BECKMAN, M.D.
Medical Practice at Dime Dr, Springdale, AR

License number
Arkansas C-4360
Category
Medical Practice
Type
Specialist
Address
Address
2081 Dime Dr, Springdale, AR 72764
Phone
(479) 751-7345
(479) 751-8947 (Fax)

Organization information

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James Beckman MD

2081 Dime Dr, Springdale, AR 72764

Industry:
Plastic Surgery
Phone:
(479) 751-7345 (Phone)
James S. Beckman Jr

Professional information

James Beckman Photo 1

James Beckman, Springdale AR

Specialties:
Plastic Surgeon
Address:
2081 Dime Dr, Springdale, AR 72764
Education:
University of Arkansas for Medical Sciences, College of Medicine - Doctor of Medicine
Board certifications:
American Board of Plastic Surgery Certification in Plastic Surgery


James S Beckman Photo 2

Dr. James S Beckman, Springdale AR - MD (Doctor of Medicine)

Specialties:
Plastic Surgery
Address:
2081 Dime Dr, Springdale 72764
(479) 751-7345 (Phone), (479) 751-8947 (Fax)
Certifications:
Plastic Surgery, 1981
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
University of Arkansas For Medical Sciences
Graduated: 1970
St Vincent Infirmary Medical Center
U a M S Medical Center
U Tenn Ctr Hlth Scis


James Beckman Photo 3

Ultra-Violet Radiation Absorbing Silicon Particle Nanoclusters

US Patent:
8394412, Mar 12, 2013
Filed:
Dec 3, 2010
Appl. No.:
12/928093
Inventors:
James Beckman - Springdale AR, US
Anatoli Ischenko - Moscow, RU
International Classification:
A61K 9/51, A61Q 17/04
US Classification:
424489, 977773, 977926
Abstract:
Silicon particle nano-clusters formed with crystalline cores and amorphous shells are used for absorbing ultraviolet wavelength radiation. Silicon nano-particles are synthesized by plasma-chemical sputtering of bulk silicon crystal to form particles which are then quenched in an atmosphere of oxygen or oxygen and nitrogen. Analysis of these particles is presented for their scattering and absorption properties for use as ultraviolet protection elements.


James Beckman Photo 4

Ultra-Violet Radiation Absorbing Silicon Particle Nanoclusters

US Patent:
2007010, May 10, 2007
Filed:
Oct 26, 2006
Appl. No.:
11/588105
Inventors:
James Beckman - Springdale AR, US
Anatoli Ischenko - Moscow, RU
International Classification:
C23C 14/32, C23C 14/00
US Classification:
204192100
Abstract:
Silicon particle nano-clusters formed with crystalline cores and amorphous shells are used for absorbing ultraviolet wavelength radiation. Silicon nano-particles are synthesized by plasma-chemical sputtering of bulk silicon crystal to form particles which are then quenched in an atmosphere of oxygen or oxygen and nitrogen. Analysis of these particles is presented for their scattering and absorption properties for use as ultraviolet protection elements.


James Beckman Photo 5

Silicon Nanoparticlefor Photodynamic Cancer Treatment Utilizing Quantum Dot Optical Properties

US Patent:
2013033, Dec 19, 2013
Filed:
Jul 3, 2013
Appl. No.:
13/934995
Inventors:
James Beckman - Springdale AR, US
Anatoli Ischenko - Moscow, RU
International Classification:
A61K 41/00
US Classification:
424490, 424613
Abstract:
Quantum active sized silicon nanoparticles with a silicon core covered by a thin 0.5-1.5 nm oxide/nitride shell are described for light exposure in the 300-600 nm range for transforming atmospheric oxygen to singlet oxygen for causing cell apoptosis as a type of photodynamic cancer therapy. A method of use of the nanoparticle in a non-hydrophobic cream is also taught along with a blocking scheme for controlled reaction of the nanoparticle.


James Beckman Photo 6

Ultra-Violet Radiation Absorbing Silicon Particle Nanoclusters

US Patent:
2014003, Feb 6, 2014
Filed:
Feb 8, 2013
Appl. No.:
13/762796
Inventors:
James Beckman - Springdale AR, US
Anatoli Ischenko - Moscow, RU
International Classification:
A61K 8/02, A61Q 17/00
US Classification:
424401, 424 59
Abstract:
Silicon particle nano-clusters formed with crystalline cores and amorphous shells are used for absorbing ultraviolet wavelength radiation. Silicon nano-particles are synthesized by plasma-chemical sputtering of bulk silicon crystal to form particles which are then quenched in an atmosphere of oxygen or oxygen and nitrogen. Analysis of these particles is presented for their scattering and absorption properties for use as ultraviolet protection elements.