James B Adams
Nursing in Colorado Springs, CO

4486943, Dec 11, 1984

Mar 12, 1984

6/588000

William D. Ryden - Colorado Springs CO
Matthew V. Hanson - Colorado Springs CO
Gary F. Derbenwick - Colorado Springs CO
Alfred P. Gnadinger - Colorado Springs CO
James R. Adams - Colorado Springs CO

Inmos Corporation - Colorado Springs CO

H01L 21265

29571

The invented technique permits the gate length to equal the channel length: source/drain regions are self-aligned and non-overlapping with respect to their gate electrode. The non-overlapping feature, along with other optimized device characteristics, are generally provided by defining a gate electrode over a substrate, forming an implant mask of dielectric, for example, on the sides of the gate electrode, and implanting a source/drain region such that the implant mask shields a portion of the substrate from implantation to provide a gap between a side edge of the gate electrode and the implanted regions. The source/drain region is then heat driven until its side edge is substantially aligned with the edge of the gate electrode. Self-aligned source/drain contacts are also provided using the implant mask to isolate the gate electrode from the contacts and interconnects.

4397077, Aug 9, 1983

Dec 16, 1981

6/331475

Gary F. Derbenwick - Colorado Springs CO
James R. Adams - Colorado Springs CO
Matthew V. Hanson - Colorado Springs CO
William D. Ryden - Colorado Springs CO

Inmos Corporation - Colorado Springs CO

H01L 2176

29571

A method is described for fabricating MOS devices of the type found in very large scale integrated circuits. According to the method described herein, various gate oxides and insulating layers are fabricated independently of each other in order to independently tailor their thicknesses and thereby provide improved isolation between gate electrodes and interconnects, and independently controllable operating characteristics for multiple gate electrode structures. The fabrication of a dynamic RAM memory cell, an overlapping gate CCD device and a self-aligned MNOS transistor cell are described using the disclosed method.

2002017, Nov 28, 2002

May 14, 2002

10/145374

Arthur Nutter - Colorado Springs CO, US
James Adams - Colorado Springs CO, US
James Patton - Colorado Springs CO, US
Jeffrey Pagano - Colorado Springs CO, US
Glenn Wheeler - Colorado Springs CO, US

G06F017/60

705/001000

A intellectual property evaluation method includes the steps of receiving a plurality of input scores for each of a plurality of patents by a intellectual property management software program. The plurality of input scores are combined to form a scale value for each of the plurality of patents. The scale values are compared to determine a select group of patents. A plurality of additional information is received by the intellectual property management software program for each of the select group of patents.

2003006, Mar 27, 2003

Sep 25, 2002

10/255127

Arthur Nutter - Colorado Springs CO, US
Ray Throckmorton - Hinsdale IL, US
James Adams - Colorado Springs CO, US

G06F017/60

705/030000, 705/031000, 705/026000

An embodiment of the invention includes a method of funding an intellectual property licensing program that includes: selling an intellectual property asset to an entity in exchange for funds paid to a seller; licensing a right in an intellectual property asset from the entity to the seller; and funding the intellectual property licensing program with a portion of the funds form selling the intellectual property asset. Another embodiment of the invention includes an intellectual property investment entity that includes an intellectual property asset purchased from a seller in exchange for funds, where an intellectual property investment entity licenses back a right in the intellectual property asset to fund an intellectual property licensing program.

2014004, Feb 13, 2014

Aug 14, 2013

13/967172

James Russell Adams - Colorado Springs CO, US
James Walter Patton - Colorado Springs CO, US
Jeffrey A. Pagano - Colorado Springs CO, US
Glenn Wheeler - Colorado Springs CO, US

TAEUS - Colorado Springs CO

G06Q 50/18, G06Q 40/06

705 735

A intellectual property evaluation method includes the steps of receiving a plurality of input scores for each of a plurality of patents by a intellectual property management software program. The plurality of input scores are combined to form a scale value for each of the plurality of patents. The scale values are compared to determine a select group of patents. A plurality of additional information is received by the intellectual property management software program for each of the select group of patents.

5141597, Aug 25, 1992

Nov 14, 1990

7/613333

James R. Adams - Colorado Springs CO
James C. Weaver - Colorado Springs CO

United Technologies Corporation - Hartford CT

H01L 2100

156628

Polycrystalline silicon resistors are formed by reducing the initial thickness of a poly layer to a magnitude such that the etch end point of the lightly doped resistors is equal to the etch end point of the heavily doped interconnection.