DR. JAMES ALAN CHAMBERS, M.D., M.P.H.
Radiology at Riveredge Dr, Plano, TX

6656852, Dec 2, 2003

Dec 6, 2001

10/006081

Antonio Luis Pacheco Rotondaro - Dallas TX
James Joseph Chambers - Plano TX

Texas Instruments Incorporated - Dallas TX

H01L 21302

438749, 438745, 438287, 134 13

One aspect of the invention relates to a method of etching a high-k dielectric. The method involves removing an exposed portion of a high-k dielectric layer from a substrate by wet etching with a solution comprising water, a strong acid, an oxidizing agent, and a fluorine compound. The etching solution provides selectivity towards the high-k film against insulating materials and polysilicon and is therefore useful in manufacturing FETs.

6780719, Aug 24, 2004

Jun 20, 2001

09/885744

Hiroaki Niimi - Richardson TX
Rajesh Khamankar - Coppell TX
James J. Chambers - Plano TX
Sunil Hattangady - McKinney TX
Antonio L. P. Rotondaro - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 21336

438287, 438762, 438763, 438775, 438776, 438777

An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C. ) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

6521911, Feb 18, 2003

Jul 19, 2001

09/908766

Gregory N. Parsons - Raleigh NC
James J. Chambers - Plano TX
M. Jason Kelly - Raleigh NC

North Carolina State University - Raleigh NC

H01L 2904

257 52, 438482

A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.

6503846, Jan 7, 2003

Jun 20, 2001

09/885587

Hiroaki Niimi - Richardson TX
James J. Chambers - Plano TX
Rajesh Khamankar - Coppell TX
Douglas T. Grider - McKinney TX

Texas Instruments Incorporated - Dallas TX

H01L 2131

438776, 438513, 438775, 438792

An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C. ) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

7183165, Feb 27, 2007

Nov 6, 2003

10/702234

Rajesh Khamankar - Coppell TX, US
Douglas T. Grider - McKinney TX, US
Hiroaki Niimi - Richardson TX, US
April Gurba - Plano TX, US
Toan Tran - Rowlett TX, US
James J. Chambers - Plano TX, US

Texas Instruments Incorporated - Dallas TX

H01L 21/336

438287, 257500

Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer () is formed on a semiconductor substrate (). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer () is removed in regions of the substrate and a second dielectric layer () is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric layer. MOS transistors () are then fabricated using the dielectric layers ().