Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra Pradhan - Marietta GA, US
Jae Woong Lee - Gainesville FL, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
Nanoholdings, LLC - Rowayton CT
International Classification:
H01L 31/00, H01L 29/08, H01L 33/00
Abstract:
Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (NIR) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention.