Hong Zhang
Accountancy at Tea Rose Cir, San Jose, CA
License number
Colorado 24341
Issued Date
Jan 13, 2006
Renew Date
Dec 1, 2015
Expiration Date
Nov 30, 2017
Type
Certified Public Accountant
Address
Address
1252 Tea Rose Cir, San Jose, CA 95131
Professional information
Software Engineer At Cisco Systems
Position:
Engineer Tech, Cisco TelePresence Business Unit at Cisco Systems Inc.
Location:
San Francisco Bay Area
Industry:
Computer Software
Work:
Cisco Systems Inc.
- San Jose, CA since 2006
-
Engineer Tech, Cisco TelePresence Business Unit
Cisco Systems Inc.
- San Jose, CA 2000 - 2006
-
Software Engineer, Voice Technology Group
Huawei Technologies Co., Ltd.
- ShenZhen, China Jan 1995 - 1998
-
Senior Manager
Education:
University of Massachusetts, Amherst 1998 - 2000
Master, Electrical and Computer Engineering, Electric & Electronic Engineering Beijing University of Aeronautics and Astronautics, Beijing, China 1992 - 1995
Master of Science (M.S.), Computer Software Engineering Beijing University of Aeronautics and Astronautics 1987 - 1991
Bachelor's degree, Engineering
Master, Electrical and Computer Engineering, Electric & Electronic Engineering Beijing University of Aeronautics and Astronautics, Beijing, China 1992 - 1995
Master of Science (M.S.), Computer Software Engineering Beijing University of Aeronautics and Astronautics 1987 - 1991
Bachelor's degree, Engineering
Interests:
Volunteering,
Mountain Biking,
Home Theater Building,
Photograph,
Classical Music,
Performance Arts,
Ballet,
Snowboarding,
Rock climbing,
Home Improvement,
Languages:
English, Chinese
Hong Zhang - San Jose, CA
Work:
Sleep Medicine Department
Staff Nurse II Healthy Living At Home
Home health RN case manager Santa Clara Kaiser Permanente Medical
Staff Nurse II in a telemetry unit Santa Clara Kaiser Permanente Medical Center
Staff Nurse I in a cardiac unit SAN FRANCISCO STATE UNIVERSITY - San Francisco, CA
Honored student SFSU/Sequoia BSN
Nursing Student Clinical Rotations Foothill and De Anza Community Colleges Pui Ying Chinese School - Vancouver, BC
Chinese teacher Changjiang Road Elementary School - Hefei, CN
Chinese teacher
Staff Nurse II Healthy Living At Home
Home health RN case manager Santa Clara Kaiser Permanente Medical
Staff Nurse II in a telemetry unit Santa Clara Kaiser Permanente Medical Center
Staff Nurse I in a cardiac unit SAN FRANCISCO STATE UNIVERSITY - San Francisco, CA
Honored student SFSU/Sequoia BSN
Nursing Student Clinical Rotations Foothill and De Anza Community Colleges Pui Ying Chinese School - Vancouver, BC
Chinese teacher Changjiang Road Elementary School - Hefei, CN
Chinese teacher
Apparatus And Method For Physical Vapor Deposition Using An Open Top Hollow Cathode Magnetron
US Patent:
6613199, Sep 2, 2003
Filed:
Oct 25, 2001
Appl. No.:
10/033165
Inventors:
Jeffrey A. Tobin - Mountain View CA
Jean Qing Lu - Palo Alto CA
Thomas Mountsier - San Jose CA
Hong Mei Zhang - San Jose CA
Jean Qing Lu - Palo Alto CA
Thomas Mountsier - San Jose CA
Hong Mei Zhang - San Jose CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1435
US Classification:
20419212, 20429812, 20429816, 20429818, 20429819, 20429821
Abstract:
A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.
Energy Conversion And Storage Films And Devices By Physical Vapor Deposition Of Titanium And Titanium Oxides And Sub-Oxides
US Patent:
7238628, Jul 3, 2007
Filed:
May 20, 2004
Appl. No.:
10/851542
Inventors:
Richard E. Demaray - Portola Valley CA, US
Hong Mei Zhang - San Jose CA, US
Mukundan Narasimhan - San Jose CA, US
Vassiliki Milonopoulou - San Jose CA, US
Hong Mei Zhang - San Jose CA, US
Mukundan Narasimhan - San Jose CA, US
Vassiliki Milonopoulou - San Jose CA, US
Assignee:
Symmorphix, Inc. - Sunnyvale CA
International Classification:
H01L 21/31, H01L 21/469
US Classification:
438785, 438239, 438240, 438591, 438597, 257E21487
Abstract:
High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TiOwherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
Energy Conversion And Storage Films And Devices By Physical Vapor Deposition Of Titanium And Titanium Oxides And Sub-Oxides
US Patent:
8076005, Dec 13, 2011
Filed:
Mar 22, 2007
Appl. No.:
11/726972
Inventors:
Richard E. Demaray - Portola Valley CA, US
Hong Mei Zhang - San Jose CA, US
Mukundan Narasimhan - San Jose CA, US
Vassiliki Milonopoulou - San Jose CA, US
Hong Mei Zhang - San Jose CA, US
Mukundan Narasimhan - San Jose CA, US
Vassiliki Milonopoulou - San Jose CA, US
Assignee:
SpringWorks, LLC - Minnetonka MN
International Classification:
B32B 9/00, B32B 15/04
US Classification:
428469, 428472, 428701, 428702
Abstract:
High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TiOwherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.