Inventors:
Yifan Guo - Irvine CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Oak Park CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
H03F 3/19
Abstract:
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.