HENG YEN LIU, C.A.
Acupuncture at Western Ave, Los Angeles, CA
License number
California AC0002600
Category
Acupuncture
Type
Acupuncturist
Address
Address
700 S Western Ave SUITE 201, Los Angeles, CA 90005
Phone
(213) 383-9511
(213) 383-9512 (Fax)
(213) 383-9512 (Fax)
Personal information
See more information about HENG YEN LIU at radaris.comName
Address
Phone
936 Gray Fox Cir, Pleasanton, CA 94566
782 The Dalles Ave, Sunnyvale, CA 94087
6179 Potrero Dr, Newark, CA 94560
455 Eddy St #1112, San Francisco, CA 94109
39562 Pardee Ct, Fremont, CA 94538
Professional information
See more information about HENG YEN LIU at trustoria.com
Ingan/Algan/Gan Multilayer Buffer For Growth Of Gan On Sapphire
Ingan/Algan/Gan Multilayer Buffer For Growth Of Gan On Sapphire
US Patent:
6495867, Dec 17, 2002
Filed:
Jul 26, 2000
Appl. No.:
09/626442
Inventors:
Changhua Chen - late of Santa Clara CA
James Dong - Los Angeles CA
Heng Liu - Los Angeles CA
James Dong - Los Angeles CA
Heng Liu - Los Angeles CA
Assignee:
AXT, Inc. - Fremont CA
International Classification:
H01L 3300
US Classification:
257190, 257103
Abstract:
A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.
Heng Yen Liu, Los Angeles CA - CA
Heng Yen Liu, Los Angeles CA - CA
Specialties:
Acupuncture
Address:
700 S Western Ave SUITE 201, Los Angeles 90005
(213) 383-9511 (Phone), (213) 383-9512 (Fax)
(213) 383-9511 (Phone), (213) 383-9512 (Fax)
Languages:
English
Heng Yen Liu, Los Angeles CA
Heng Yen Liu, Los Angeles CA
Specialties:
Acupuncturist
Address:
700 S Western Ave, Los Angeles, CA 90005
Light Emitting Diode
Light Emitting Diode
US Patent:
6888171, May 3, 2005
Filed:
Dec 22, 2000
Appl. No.:
09/748801
Inventors:
Heng Liu - Los Angeles CA, US
Changhua Chen - Los Angeles CA, US
Changhua Chen - Los Angeles CA, US
Assignee:
Dallan Luming Science & Technology Group Co., Ltd. - Dalian
International Classification:
H01L027/15, H01L029/12, H01L029/40
US Classification:
257 99, 257 79, 257613, 257615, 257612, 257624, 257626
Abstract:
A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.