HANH TUYET NGUYEN, PHARM. D
Pharmacy at Branham Ln, San Jose, CA

6110322, Aug 29, 2000

Mar 6, 1998

9/036536

Hong Bee Teoh - Saratoga CA
James Jin-Long Chen - San Jose CA
Cuong C. Nguyen - San Jose CA
Hanh D. Nguyen - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23F 102

156345

A pedestal heating system provided for heating a pedestal disposed in the processing chamber of a substrate processing system. A pedestal heating system according to the present invention includes: a heater power supply, a transformer, coupled to the heater power supply, a heater element coupled to the transformer, and an RF ground electrode. The transformer is configured to reduce leakage current from the heater element to various elements of the substrate processing system by localizing current leakage loops. The heater element and RF ground electrode are disposed within the pedestal. Preferably, the transformer is simply an isolation transformer. Where an RF energy source is used, such as in a plasma CVD processing system, an EMI filter may be coupled between the transformer and the heater element, or at another point in the power supply chain to prevent feed-through of RF energy to other of the substrate processing system's subsystems, or other sensitive electronic circuitry coupled to the facility's power supply.

2003001, Jan 23, 2003

Jul 18, 2001

09/908999

Jianhua Hu - Sunnyvale CA, US
Hanh Nguyen - San Jose CA, US
Steve Chiao - San Jose CA, US
Xiaoxiong Yuan - Cupertino CA, US
Anzhong Chang - San Jose CA, US
Hongbee Teoh - Saratoga CA, US
Avgerinos Gelatos - Redwood City CA, US

Applied Materials, Inc.

C23C016/00

427/255391

In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiClgas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NHgas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiClgas and the NHgas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.

2006002, Feb 2, 2006

Jul 29, 2004

10/901768

Salvador Umotoy - Antioch CA, US
Lawrence Chung-Lai Lei - Milpitas CA, US
Anh Nguyen - Milpitas CA, US
Steve Chiao - San Jose CA, US
Hanh Nguyen - San Jose CA, US

C23C 16/00, C23F 1/00

156345340, 118715000, 156345330

A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

8137463, Mar 20, 2012

Dec 19, 2007

11/960166

Wei Liu - San Jose CA, US
Johanes S. Swenberg - Los Gatos CA, US
Hanh D. Nguyen - San Jose CA, US
Son T. Nguyen - San Jose CA, US
Roger Curtis - Stockton CA, US
Philip A. Bottini - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/455, C23F 1/00, H01L 21/306, C23C 16/06, C23C 16/22

118715, 15634529, 15634533, 15634534

The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

2012016, Jun 28, 2012

Mar 8, 2012

13/415753

Wei Liu - San Jose CA, US
Johanes S. Swenberg - Los Gatos CA, US
Hanh D. Nguyen - San Jose CA, US
Son T. Nguyen - San Jose CA, US
Roger Curtis - Stockton CA, US
Philip A. Bottini - Santa Clara CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 21/318, H01L 21/263

438777, 438798, 257E21293, 257E21331

The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.