MRS. HANH THI NGUYEN, FNP
Nursing at De Anza Blvd, Cupertino, CA

6110322, Aug 29, 2000

Mar 6, 1998

9/036536

Hong Bee Teoh - Saratoga CA
James Jin-Long Chen - San Jose CA
Cuong C. Nguyen - San Jose CA
Hanh D. Nguyen - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23F 102

156345

A pedestal heating system provided for heating a pedestal disposed in the processing chamber of a substrate processing system. A pedestal heating system according to the present invention includes: a heater power supply, a transformer, coupled to the heater power supply, a heater element coupled to the transformer, and an RF ground electrode. The transformer is configured to reduce leakage current from the heater element to various elements of the substrate processing system by localizing current leakage loops. The heater element and RF ground electrode are disposed within the pedestal. Preferably, the transformer is simply an isolation transformer. Where an RF energy source is used, such as in a plasma CVD processing system, an EMI filter may be coupled between the transformer and the heater element, or at another point in the power supply chain to prevent feed-through of RF energy to other of the substrate processing system's subsystems, or other sensitive electronic circuitry coupled to the facility's power supply.

2009016, Jun 25, 2009

Dec 19, 2007

11/960111

Johanes F. Swenberg - Los Gatos CA, US
Wei Liu - San Jose CA, US
Hanh D. Nguyen - San Jose CA, US
Son T. Nguyen - San Jose CA, US
Roger Curtis - Stockton CA, US
Philip A. Bottini - Santa Clara CA, US
Michael J. Mark - San Jose CA, US
Theresa Kramer Guarini - San Jose CA, US
Woong Choi - Santa Clara CA, US

H05H 1/24, C23C 16/503

427569, 118723 R

The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.

2006002, Feb 2, 2006

Jul 29, 2004

10/901768

Salvador Umotoy - Antioch CA, US
Lawrence Chung-Lai Lei - Milpitas CA, US
Anh Nguyen - Milpitas CA, US
Steve Chiao - San Jose CA, US
Hanh Nguyen - San Jose CA, US

C23C 16/00, C23F 1/00

156345340, 118715000, 156345330

A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

2013016, Jun 27, 2013

Dec 21, 2012

13/723409

Applied Materials, Inc. - Santa Clara CA, US
JEONGWON PARK - Palo Alto CA, US
PRAVIN K. NARWANKAR - Sunnyvale CA, US
NATE SI NGUYEN - Fountain Valley CA, US
HANH NGUYEN - San Jose CA, US
TO CHAN - Fremont CA, US
JINGJING XU - Cupertino CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

B08B 7/00, H01L 21/02

134 11, 15634533, 15634529, 15634543

Methods and apparatus for cleaning substrate surfaces are provided herein. In some embodiments, a method of cleaning a surface of a substrate may include providing a hydrogen containing gas to a first chamber having a plurality of filaments disposed therein; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a process temperature sufficient to decompose at least some of the hydrogen containing gas; and cleaning the surface of the substrate by exposing the substrate to hydrogen atoms formed from the decomposed hydrogen containing gas for a period of time.