Inventors:
Hang M. Liaw - Scottsdale AZ
Ha T.-T. Nguyen - Mesa AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L 21205, H01L 2176
Abstract:
A method for growing selective epitaxial silicon by chemical vapor deposition resulting in a substantially planar surface by growing superimposed silicon layers at temperatures above and below a transition point.