GREGORY CARTER
Electrician at Avellano, San Antonio, TX

5943591, Aug 24, 1999

Jul 10, 1997

8/890910

Edward R. Vokoun - Boerne TX
Miguel A. Delgado - San Antonio TX
Gregory N. Carter - San Antonio TX
Brian D. Richardson - Saratoga CA
Rajive Dhar - Santa Clara CA
Elizabeth A. Chambers - Mountain View CA

VLSI Technology - San Jose CA

H01L 21301

438462

A method for forming a scribe line on a semiconductor wafer including the steps of: (a) providing a semiconductor substrate; and (b) sequentially providing a plurality of layers over the semiconductor substrate of alternating conductive and insulating types, where each of the layers is provided with an elongated opening is formed relative to a desired scribe line position, and where the openings of at least some of the plurality of layers are wider than openings of preceding layers such that at least one sidewall of a completed scribe line has a pronounced slope extending outwardly from its base. The structure of the present invention is, therefore, a scribe line having sloped sidewalls that greatly reduces scribe line contamination problems and enhances planarization during subsequent spin-on-material processes. The scribe lines can either be elongated openings in the layers, or an elongated mesa formed in the layers.

5686171, Nov 11, 1997

Dec 30, 1993

8/176353

Edward R. Vokoun - Boerne TX
Miguel A. Delgado - San Antonio TX
Gregory N. Carter - San Antonio TX
Brian D. Richardson - Saratoga CA
Rajive Dhar - Santa Clara CA
Elizabeth A. Chambers - Mountain View CA

VLSI Technology, Inc. - San Jose CA

B32B 900

428209

A method for forming a scribe line on a semiconductor wafer including the steps of: (a) providing a semiconductor substrate; and (b) sequentially providing a plurality of layers over the semiconductor substrate of alternating conductive and insulating types, where each of the layers is provided with an elongated opening is formed relative to a desired scribe line position, and where the openings of at least some of the plurality of layers are wider than openings of preceding layers such that at least one sidewall of a completed scribe line has a pronounced slope extending outwardly from its base. The structure of the present invention is, therefore, a scribe line having sloped sidewalls that greatly reduces scribe line contamination problems and enhances planarization during subsequent spin-on-material processes. The scribe lines can either be elongated openings in the layers, or an elongated mesa formed in the layers.

5795815, Aug 18, 1998

Aug 19, 1996

8/699492

Edward R. Vokoun - Boerne TX
Miguel A. Delgado - San Antonio TX
Gregory N. Carter - San Antonio TX
Brian D. Richardson - Saratoga CA
Rajive Dhar - Santa Clara CA
Elizabeth A. Chambers - Mountain View CA

VLSI Technology, Inc. - San Jose CA

H01L 21301

438462

A method for forming a scribe line on a semiconductor wafer including the steps of: (a) providing a semiconductor substrate; and (b) sequentially providing a plurality of layers over the semiconductor substrate of alternating conductive and insulating types, where each of the layers is provided with an elongated opening is formed relative to a desired scribe line position, and where the openings of at least some of the plurality of layers are wider than openings of preceding layers such that at least one sidewall of a completed scribe line has a pronounced slope extending outwardly from its base. The structure of the present invention is, therefore, a scribe line having sloped sidewalls that greatly reduces scribe line contamination problems and enhances planarization during subsequent spin-on-material processes. The scribe lines can either be elongated openings in the layers, or an elongated mesa formed in the layers.