GILBERTO MORALES
Pilots at Paloma Way, Arlington, TX

License number
Texas C1075599
Category
Airmen
Address
Address
1920 Paloma Way, Arlington, TX 76006

Professional information

Gilberto Morales Photo 1

Pressure Transducer With Composite Diaphragm

US Patent:
6796193, Sep 28, 2004
Filed:
Jan 17, 2003
Appl. No.:
10/346774
Inventors:
Michael J. Haji-Sheikh - Richardson TX
Gilberto Morales - Arlington TX
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
H01L 2100
US Classification:
73862632, 7351401, 7351432, 438 50, 438 51, 438 53
Abstract:
A method of forming a composite diaphragm for a pressure transducer is disclosed. The method comprises providing a substrate layer having a first conductivity type and a first surface. Positive implants are deposited in the first surface of the substrate layer, and an epitaxial layer is grown on the first surface of the substrate layer so that the positive implants form positive diffusions in the epitaxial layer. An oxide pattern is formed on the epitaxial layer, and a top layer is deposited over the epitaxial layer and oxide pattern. The substrate layer and positive diffusions of the epitaxial layer are then etched to form the composite diaphragm. The positive diffusions can be patterned so that the resulting etched structure has improved diaphragm performance characteristics. For example, the remaining pattern can include a plurality of bosses and interconnecting battens so that the diaphragm has a relatively high burst pressure and a high output signal with improved linearity at low pressures.


Gilberto Morales Photo 2

Robust Sensor With Top Cap

US Patent:
2011025, Oct 20, 2011
Filed:
Apr 19, 2010
Appl. No.:
12/762797
Inventors:
Scott Edward Beck - Murphy TX, US
Richard Alan Davis - Plano TX, US
Gilberto Morales - Arlington TX, US
Carl Stewart - Plano TX, US
Assignee:
HONEYWELL INTERNATIONAL INC. - Morristown NJ
International Classification:
G01F 1/69, H05K 13/00
US Classification:
7320427, 295921
Abstract:
A robust sensor, such as a robust flow sensor or pressure sensor, is provided. In one illustrative embodiment, a robust flow sensor includes one or more flow sensor components secured relative to a membrane, and a substrate for supporting the membrane. In some cases, the one or more flow sensor components may be substantially thermally isolated from the substrate by the membrane. One or more wire bond pads may be situated adjacent to a first side of the substrate and may be provided for communicating signals relative to the one or more flow sensor components. A top cap may be situated adjacent to the first side of the substrate and secured relative to the substrate. The top cap may define at least part of a fluid inlet and/or an outlet of the flow sensor assembly, and may at least partially define a flow channel that extends from the inlet, past at least one of the one or more flow sensor components, and out the outlet of the flow sensor assembly. The top cap may be structured and attached relative to the first side of the substrate such that the one or more wire bond pads are not exposed to a fluid in the flow channel, but are accessible for electrical connection to an external device. While a flow sensor is used as an example, it is contemplated that any suitable sensor may be used, as desired.


Gilberto Morales Photo 3

Single Mode Vertical Cavity Surface Emitting Laser

US Patent:
2004021, Oct 28, 2004
Filed:
May 20, 2004
Appl. No.:
10/850086
Inventors:
Ralph Johnson - Murphy TX, US
Gilberto Morales - Arlington TX, US
International Classification:
H01S005/00, H01L033/00
US Classification:
372/045000, 372/046000, 257/098000
Abstract:
Optoelectronic devices are disclosed, an example of which is a vertical cavity surface emitting lasers (“VCSEL”) configured to emit in a single transverse mode. One exemplary VCSEL includes a substrate with upper and lower surfaces, where a lower mirror portion is disposed upon the upper surface of the substrate. An active region of the VCSEL is bounded on one side by the lower mirror portion, and on the other side by an upper mirror portion that substantially comprises an electrically isotropic material. In addition, the VCSEL includes a substantially equipotential layer disposed on the upper mirror portion, and an insulating layer arranged between the upper mirror portion and the substantially equipotential layer and defining an aperture. Among other things, such configurations enable single, lowest order, mode operation over a range of operating currents, while also providing for suppression or elimination of higher order modes.


Gilberto Morales Photo 4

Versatile Method And System For Single Mode Vcsels

US Patent:
6905900, Jun 14, 2005
Filed:
Nov 28, 2000
Appl. No.:
09/724820
Inventors:
Ralph H. Johnson - Murphy TX, US
Gilberto Morales - Arlington TX, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L021/00, H01S005/187
US Classification:
438 29, 438 22, 438 45, 372 43, 372 46, 372 96
Abstract:
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component () is disclosed, comprising a semiconductor substrate () having a lower surface and an upper surface, a bottom electrical contact () disposed along the lower surface of the substrate, a lower mirror () formed of n-type material and disposed upon the upper surface of the substrate, an active region () having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror () formed from isotropic material and disposed upon the active region, an equipotential layer () disposed upon the upper mirror portion, a first upper electrical contact () disposed upon the equipotential layer, a second upper electrical contact () disposed upon the equipotential layer at a particular distance () from the first upper electrical contact, a first isolation region () disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region () disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer () interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture () of smaller dimension than the particular distance between the first and second upper contacts.


Gilberto Morales Photo 5

Flow Sensor Apparatus And Method With Media Isolated Electrical Connections

US Patent:
7765872, Aug 3, 2010
Filed:
Nov 19, 2008
Appl. No.:
12/273912
Inventors:
Gilberto Morales - Arlington TX, US
Carl Stewart - Plano TX, US
Scott Edward Beck - Murphy TX, US
Richard Alan Davis - Plano TX, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
G01L 7/00
US Classification:
73706
Abstract:
A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.


Gilberto Morales Photo 6

Pressure-Based Fluid Flow Sensor

US Patent:
7647842, Jan 19, 2010
Filed:
Jul 25, 2008
Appl. No.:
12/180070
Inventors:
Wayne Kilian - Richardson TX, US
Scott Edward Beck - Murphy TX, US
Gilberto Morales - Arlington TX, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
G01F 1/38
US Classification:
7386147
Abstract:
A volumetric fluid flow sensor () includes a flow channel () for flowing a fluid therein; and a diaphragm () having an outer surface within the flow channel (). The diaphragm () includes at least one flow disrupting feature mechanically coupled to or emerging from the outer surface of the diaphragm (). A sensing structure () is coupled to the diaphragm () for generating a sensing signal responsive to a pressure signal on the diaphragm ().


Gilberto Morales Photo 7

Flip-Chip Flow Sensor

US Patent:
7755466, Jul 13, 2010
Filed:
Apr 26, 2006
Appl. No.:
11/412460
Inventors:
Scott E. Beck - Murphy TX, US
Gilberto Morales - Arlington TX, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
H01C 3/04
US Classification:
338 25, 338 20, 73721, 257419
Abstract:
A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.


Gilberto Morales Photo 8

Vertical Hall Effect Device

US Patent:
7205622, Apr 17, 2007
Filed:
Jan 20, 2005
Appl. No.:
11/038881
Inventors:
Yousef M. Alimi - Allen TX, US
James R. Biard - Richardson TX, US
Gilberto Morales - Arlington TX, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
H01L 29/82
US Classification:
257422, 257426, 257427, 257E29323, 438 48, 3242072
Abstract:
A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.


Gilberto Morales Photo 9

Sensor Geometry For Improved Package Stress Isolation

US Patent:
7798010, Sep 21, 2010
Filed:
Oct 11, 2007
Appl. No.:
11/973966
Inventors:
Gilberto Morales - Arlington TX, US
Carl E. Stewart - Plano TX, US
Richard A. Davis - Plano TX, US
Alistair D. Bradley - Dublin OH, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
G01L 1/00
US Classification:
73760
Abstract:
The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.


Gilberto Morales Photo 10

Pressure Sensor With Silicon Frit Bonded Cap

US Patent:
7216547, May 15, 2007
Filed:
Jan 6, 2006
Appl. No.:
11/328415
Inventors:
Carl E. Stewart - Plano TX, US
Gilberto Morales - Arlington TX, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
G01L 7/00
US Classification:
73756, 73753, 257415
Abstract:
A pressure sensor apparatus and method that incorporates a silicon frit bonded cap. The pressure sensor includes a silicon sensor wafer with diaphragms at a bottom surface thereof, a silicon cap wafer mounted on the topside of each sensor wafer, a plurality of silicon sensor die formed on the sensor wafer, a silicon cap wafer etched to create a plurality of reference cavities on the topside of the diaphragm, a thin glass frit to form a wafer-to-wafer bond between the sensor wafer and cap wafer. Sensing devices such as semiconductor die/sensor, peizoresistors, can be used to sense the pressure. The wafer-to-wafer frit bonding improves the output signal drift and the thermal performance of the pressure sensor minimizes the thermal mismatch created by anodic bonded glass wafers.