GARY A TIPTON
General Contractor at Penfield Ln, Albuquerque, NM

6210594, Apr 3, 2001

Feb 26, 1998

9/031130

Zabra H. Amini - Cupertino CA
Robert B. Campbell - Tijeras NM
Robert L. Jarecki - Albuquerque NM
Gary D. Tipton - Albuquerque NM

Applied Materials, Inc. - Santa Clara CA

H05H 100

216 67

A near substrate reactant homogenization apparatus reduces the excess reactive species in a region at or near the edge of a substrate surface to provide a uniform reactant concentration over the substrate, thereby improving etch rate uniformity over the substrate. The near substrate reactant homogenization apparatus has a substantially planar surface that is parallel to said substrate surface and that extends beyond the substrate edge, at or below the substrate surface. In a first preferred embodiment of the invention, the temperature of the gas absorber area is changed to promote recombination or condensation of excess reactive species at the substrate edge, where the excess species are removed. In another, equally preferred embodiment of the invention, the gas absorber area is formed of a porous material having a large surface area. Excess reactive species enter the porous structure and are subsequently recombined.

5938943, Aug 17, 1999

Jul 28, 1995

8/508724

Zahra H. Amini - Cupertino CA
Robert B. Campbell - Tijeras NM
Robert L. Jarecki - Albuquerque NM
Gary D. Tipton - Albuquerque NM

Applied Materials, Inc. - Santa Clara CA

H05H 100

216 67

A near substrate reactant homogenization apparatus reduces the excess reactive species in a region at or near the edge of a substrate surface to provide a uniform reactant concentration over the substrate, thereby improving etch rate uniformity over the substrate. The near substrate reactant homogenization apparatus has a substantially planar surface that is parallel to said substrate surface and that extends beyond the substrate edge, at or below the substrate surface. In a first preferred embodiment of the invention, the temperature of the gas absorber area is changed to promote recombination or condensation of excess reactive species at the substrate edge, where the excess species are removed. In another, equally preferred embodiment of the invention, the gas absorber area is formed of a porous material having a large surface area. Excess reactive species enter the porous structure and are subsequently recombined.

5674652, Oct 7, 1997

Feb 28, 1991

7/662676

Kenneth P. Bishop - Rio Rancho NM
Steven R. J. Brueck - Albuquerque NM
Susan M. Gaspar - Albuquerque NM
Kirt C. Hickman - Albuquerque NM
John R. McNeil - Albuquerque NM
S. Sohail H. Naqvi - Albuquerque NM
Brian R. Stallard - Albuquerque NM
Gary D. Tipton - Albuquerque NM

University of New Mexico - Albuquerque NM

G03F 720

430 30

In microelectronics manufacturing, an arrangement for monitoring and control of exposure of an undeveloped photosensitive layer on a structure susceptible to variations in optical properties in order to attain the desired critical dimension for the pattern to be developed in the photosensitive layer. This is done by ascertaining the intensities for one or more respective orders of diffracted power for an incident beam of radiation corresponding to the desired critical dimension for the photosensitive layer as a function of exposure time and optical properties of the structure, illuminating the photosensitive layer with a beam of radiation of one or more frequencies to which the photosensitive layer is not exposure-sensitive, and monitoring the intensities of the orders of diffracted radiation due to said illumination including at least the first order of diffracted radiation thereof, such that when said predetermined intensities for the diffracted orders are reached during said illumination of photosensitive layer, it is known that a pattern having at least approximately the desired critical dimension can be developed on the photosensitive layer.