FRANK T SMITH
Engineering in Cambridge, MA
License number
Massachusetts 8508
Expiration Date
Jun 30, 1992
Type
Civil Engineer
Address
Address
Cambridge, MA 02142
Professional information
Method Of Making Buffer Layers For Iii-V Devices Using Solid Phase Epitaxy
US Patent:
4952527, Aug 28, 1990
Filed:
Feb 19, 1988
Appl. No.:
7/157806
Inventors:
Arthur R. Calawa - Wellesley MA
Frank W. Smith - Cambridge MA
Michael J. Manfra - Tewksbury MA
Chang-Lee Chen - Sudbury MA
Frank W. Smith - Cambridge MA
Michael J. Manfra - Tewksbury MA
Chang-Lee Chen - Sudbury MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 21203, H01L 2120, H01L 21324
US Classification:
437107
Abstract:
A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300. degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.
Ultra-High-Speed Photoconductive Devices Using Semi-Insulating Layers
US Patent:
5332918, Jul 26, 1994
Filed:
Aug 31, 1992
Appl. No.:
7/938385
Inventors:
Frank W. Smith - Cambridge MA
Mark A. Hollis - Concord MA
Arthur R. Calawa - Wellesley MA
Vicky Diadiuk - Lincoln MA
Han Q. Le - Newton MA
Mark A. Hollis - Concord MA
Arthur R. Calawa - Wellesley MA
Vicky Diadiuk - Lincoln MA
Han Q. Le - Newton MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 2714, H01L 3100, H01L 23485
US Classification:
257431
Abstract:
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150. degree. to about 300. degree. C.
Ultra-High-Speed Photoconductive Devices Using Semi-Insulating Layers
US Patent:
5168069, Dec 1, 1992
Filed:
Feb 17, 1989
Appl. No.:
7/312133
Inventors:
Frank W. Smith - Cambridge MA
Mark A. Hollis - Concord MA
Arthur R. Calawa - Wellesley MA
Vicky Diadiuk - Lincoln MA
Han Q. Le - Newton MA
Mark A. Hollis - Concord MA
Arthur R. Calawa - Wellesley MA
Vicky Diadiuk - Lincoln MA
Han Q. Le - Newton MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 3138, H01L 21265
US Classification:
437 5
Abstract:
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150. degree. to about 300. degree. C.