FENG LI
Medical Practice at Cottle Rd, San Jose, CA

License number
California MTO540
Category
Medical Practice
Type
Clinical Cytogenetic
Address
Address
5755 Cottle Rd BUILDING 6, San Jose, CA 95123
Phone
(408) 972-3246
(408) 972-3328 (Fax)

Personal information

See more information about FENG LI at radaris.com
Name
Address
Phone
Feng Li
4962 Monte Vista St, Los Angeles, CA 90042
Feng Li
504 Griswold St, Glendale, CA 91205
(818) 246-6038
Feng Li
425 N Nicholson Ave APT N, Monterey Park, CA 91755
(626) 274-4090
Feng Li
4340 Walnut St UNIT A, Baldwin Park, CA 91706
Feng Li, age 66
5651 Glenstone Way, San Diego, CA 92121

Professional information

Feng Li Photo 1

Process Integration &Amp; Failure Analysis Engineer

Position:
Yield and Failure Analysis Engineer at HGST, a Western Digital company
Location:
San Jose, California
Industry:
Computer Hardware
Work:
HGST, a Western Digital company - San Jose, CA since Apr 2012 - Yield and Failure Analysis Engineer First Solar - Santa Clara, CA Mar 2011 - Feb 2012 - Process Integration Engineer Nanosolar - San Jose, CA Dec 2007 - Mar 2011 - Senior Process Engineer American Superconductor - Devens, MA Jul 1999 - Dec 2007 - Principal Engineer
Education:
Kyoto University, Japan
MS, Materials Science & Engineering
Languages:
Japanese, Chinese


Feng Li Photo 2

Principal Engineer @ Atoptech

Position:
Principal Engineer at Atoptech
Location:
San Jose, California
Industry:
Computer Software
Work:
Atoptech since Apr 2012 - Principal Engineer Magma Design Automation Apr 2008 - Mar 2012 - Member of Consulting Staff Sun Microsystems Sep 2006 - Apr 2008 - Principal Engineer Synopsys Inc. Apr 1996 - Sep 2006 - Staff Software Engineer


Feng Li Photo 3

Optical Imaging System With Direct Image Construction

US Patent:
2002003, Mar 21, 2002
Filed:
Feb 6, 2001
Appl. No.:
09/778617
Inventors:
Xuefeng Cheng - Milpitas CA, US
Xiaorong Xu - Menlo Park CA, US
Shuoming Zhou - Cupertino CA, US
Lai Wang - Cupertino CA, US
Ming Wang - San Jose CA, US
Feng Li - San Jose CA, US
Guobao Hu - San Jose CA, US
International Classification:
G01J005/02, A61B005/00
US Classification:
250/339120, 600/322000
Abstract:
The invention generally relates to optical imaging systems and methods for providing images of two-dimensional or three-dimensional spatial or temporal distribution of properties of chromophores in a physiological medium. More particularly, the following description provides preferred embodiments of optical imaging systems utilizing efficient, real-time image construction algorithms. A typical optical imaging system includes at least one wave source, at least one wave detector, a movable member, an actuator member, and an imaging member. The wave source emits electromagnetic waves into a target area of the medium, and the wave detector detects electromagnetic waves and generates output signal in response thereto. The movable member includes the wave source and/or detector, and the actuator member moves the movable member along with the wave source and detector over different regions of the target area while the wave detector generates the output signal therefrom. The imaging member generates a set of voxels in the target area and calculates voxel values each of which represents a spatial or temporal average of the property of the chromophore in each voxel. The imaging member generates a set of cross-voxels from the intersecting voxels, and calculates cross-voxel values of the cross-voxels directly from the voxel values of the intersecting voxels. The imaging member then constructs the images of the chromophore properties in the target area. Accordingly, without needing to resort to the time-consuming conventional image reconstruction methods, the optical imaging system of the present invention can construct such images on a substantially real time basis.


Feng Li Photo 4

Self-Calibrating Optical Imaging System

US Patent:
6735458, May 11, 2004
Filed:
Oct 1, 2002
Appl. No.:
10/262523
Inventors:
Xuefeng Cheng - Milpitas CA
Xiaorong Xu - Menlo Park CA
Shuoming Zhou - Cupertino CA
Lai Wang - Cupertino CA
Ming Wang - San Jose CA
Feng Li - San Jose CA
Guobao Hu - San Jose CA
Assignee:
Photonify Technologies, Inc. - Fremont CA
International Classification:
A61B 500
US Classification:
600323, 600310, 600473, 600476
Abstract:
The present invention generally relates to optical imaging systems and methods for providing images of two-dimensional and/or three-dimensional distribution of properties of chromophores in various physiological media. More particularly, the present invention relates to optical imaging systems, optical probes thereof, and methods therefor utilizing self-calibration of their output signals. A typical self-calibrating optical imaging system includes at least one wave source, at least one wave detector, a signal analyzer, a signal processor, and an image processor. The signal analyzer receives, from the wave detector, an output signal representative of the distribution of the chromophores or their properties in target areas of the medium. The signal analyzer analyzes amplitudes of the output signal and selects multiple points of the output signal having substantially similar amplitudes. The signal processor calculates a baseline corresponding to a representative amplitude of the similar amplitudes and provides a self-calibrated output signal.


Feng Li Photo 5

Self-Calibrating Optical Imaging System

US Patent:
6516209, Feb 4, 2003
Filed:
Feb 6, 2001
Appl. No.:
09/778618
Inventors:
Xuefeng Cheng - Milpitas CA
Xiaorong Xu - Menlo Park CA
Shuoming Zhou - Cupertino CA
Lai Wang - Cupertino CA
Ming Wang - San Jose CA
Feng Li - San Jose CA
Guobao Hu - San Jose CA
Assignee:
Photonify Technologies, Inc. - Fremont CA
International Classification:
A61B 500
US Classification:
600323, 600310, 600473, 600476, 2502521
Abstract:
The present invention generally relates to optical imaging systems and methods for providing images of two-dimensional and/or three-dimensional distribution of properties of chromophores in various physiological media. More particularly, the present invention relates to optical imaging systems, optical probes thereof, and methods therefore utilizing self-calibration of their output signals. A typical self-calibrating optical imaging system includes at least one wave source, at least one wave detector, a signal analyzer, a signal processor, and an image processor. The signal analyzer receives, from the wave detector, an output signal representative of the distribution of the chromophores or their properties in target areas of the medium. The signal analyzer analyzes amplitudes of the output signal and selects multiple points of the output signal having substantially similar amplitudes. The signal processor calculates a baseline corresponding to a representative amplitude of the similar amplitudes and provides a self-calibrated output signal.


Feng Li Photo 6

Speeding Up Timing Analysis By Reusing Delays Computed For Isomorphic Subcircuits

US Patent:
7451412, Nov 11, 2008
Filed:
Aug 4, 2005
Appl. No.:
11/198451
Inventors:
Larry G. Jones - San Jose CA, US
Feng Li - San Jose CA, US
Mohan Rangan Govindaraj - Menlo Park CA, US
Bradley R. Roetcisoender - Kirkland WA, US
Michael G. Weaver - Menlo Park CA, US
Assignee:
Synopsys, Inc. - Mountain View CA
International Classification:
G06F 17/50
US Classification:
716 4, 716 5, 716 6, 703 14
Abstract:
One embodiment of the present invention provides a system that speeds up timing analysis by reusing delays computed for isomorphic subcircuit. During operation, the system receives a circuit block to be analyzed, wherein the circuit block is in the form of a netlist. The system then subdivides the circuit block into a set of subcircuits. The subcircuits are then partitioned into equivalence classes, which contain subcircuits which are topologically isomorphic to each other. Next, the system performs a timing analysis by tracing paths through a timing graph for the circuit block. During this timing analysis, whenever a delay is required for a subcircuit, the system determines if a corresponding delay has been already computed for the equivalence class associated with the subcircuit. If so, the system reuses the delay. If not, the system computes the delay for the subcircuit, and then associates the computed delay with the equivalence class so that the computed delay can be reused for isomorphic subcircuits.


Feng Li Photo 7

Memory With High Dielectric Constant Antifuses Adapted For Use At Low Voltage

US Patent:
7781805, Aug 24, 2010
Filed:
Feb 6, 2009
Appl. No.:
12/367214
Inventors:
Xiaoyu Yang - Campbell CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US
Assignee:
SanDisk 3D LLC - Milpitas CA
International Classification:
H01L 29/66
US Classification:
257209, 257530, 257E29081, 257E29085, 257E29091, 257E2933, 438597, 365103
Abstract:
A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.


Feng Li Photo 8

Memory With High Dielectric Constant Antifuses Adapted For Use At Low Voltage

US Patent:
8350299, Jan 8, 2013
Filed:
Jul 14, 2010
Appl. No.:
12/836320
Inventors:
Xiaoyu Yang - Campbell CA, US
Roy E. Scheuerlein - Cupertino CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US
Assignee:
SanDisk 3D LLC - Milpitas CA
International Classification:
H01L 29/66
US Classification:
257209, 257530, 257E27111
Abstract:
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XO, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.


Feng Li Photo 9

Method And Apparatus For Programming A Memory Array

US Patent:
7212454, May 1, 2007
Filed:
Jun 22, 2005
Appl. No.:
11/158396
Inventors:
Bendik Kleveland - Santa Clara CA, US
Tae Hee Lee - Saratoga CA, US
Seung Geon Yu - San Ramon CA, US
Chia Yang - San Jose CA, US
Feng Li - San Jose CA, US
Xiaoyu Yang - Campbell CA, US
Assignee:
SanDisk 3D LLC - Sunnyvale CA
International Classification:
G11C 29/00
US Classification:
365200, 365175
Abstract:
A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.


Feng Li Photo 10

Resistance-Switching Memory Cells Adapted For Use At Low Voltage

US Patent:
2013011, May 16, 2013
Filed:
Jan 4, 2013
Appl. No.:
13/734517
Inventors:
SanDisk 3D LLC - Milpitas CA, US
Roy E. Scheuerlein - Cupertino CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US
Assignee:
SANDISK 3D LLC - Milpitas CA
International Classification:
H01L 45/00
US Classification:
257 2
Abstract:
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.