Errol P Eernisse
Engineers in Salt Lake City, UT

License number
Utah 158895-2202
Issued Date
Jan 1, 1910
Expiration Date
Dec 31, 2004
Category
Engineer/Land Surveyor
Type
Professional Engineer
Address
Address
Salt Lake City, UT

Organization information

See more information about Errol P Eernisse at bizstanding.com

Errol P. Eernisse Family Limited Partnership

1779 Yale Ave, Salt Lake City, UT 84108

Industry:
Business Services
Doing business as:
Errol P. Eernisse Family LLP
Principal:
Errol P. Eernisse Principal, inactive

Professional information

Errol Eernisse Photo 1

Thermally Matched Strip Mounted Resonator And Related Mounting Method

US Patent:
5012151, Apr 30, 1991
Filed:
Sep 12, 1989
Appl. No.:
7/406168
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
Assignee:
Halliburton Company - Duncan OK
International Classification:
H01L 4108
US Classification:
310346
Abstract:
A resonator assembly comprises a rigid support and a rigid crystal which are rigidly connected along linear segments which have one or more matched thermal characteristics. In a particular embodiment, a thermally matched resonator assembly comprises a Z-cut quartz crystal support, a quartz crystal resonator having an active region and including a crystalline structure oriented relative to X-, Y- and Z-crystallographic axes, which X- and Y-crystallographic axes define an X-Y crystallographic plane; and a rigid connector structure for rigidly connecting the resonator to the support along a segment of a line of a plane parallel to or including the X-Y crystallographic plane, which segment extends across a surface of the resonator and is spaced from the center of the active region of the resonator. A method of mounting a crystal which has the aforementioned crystalline structure to a Z-cut quartz support comprises: selecting a chord on a face of the crystal, which chord is a segment of a line of an X-Y plane intersecting the face of the crystal away from the center of an active region of the crystal; and bonding the crystal of the Z-cut quartz support along the length of the chord.


Errol Eernisse Photo 2

Pressure/Temperature Transducer With Improved Thermal Coupling And Enhanced Transient Response

US Patent:
6131462, Oct 17, 2000
Filed:
Dec 18, 1998
Appl. No.:
9/213133
Inventors:
Errol P. EerNisse - Salt Lake City UT
Lon J. Perry - West Jordan UT
Roger W. Ward - Park City UT
Robert B. Wiggins - Holliday UT
Assignee:
Delaware Capital Formation, Inc. - Wilmington DE
International Classification:
G01L 1100, G01L 700
US Classification:
73702
Abstract:
A transducer pressure crystal having improved thermal coupling with the environment external to a pressure housing in which the crystal is disposed. A cylindrical major portion of the side wall of the pressure crystal is located immediately adjacent an inner wall of a chamber within the pressure housing, separated therefrom only by dimensional tolerances sufficient to ensure that the crystal is surrounded by pressure-transmitting fluid exposed to pressure from the external environment. The thermal time constant of the transducer for external temperature changes is significantly decreased. The time constant of the transducer for temperature changes in the pressure-transmitting fluid produced by rapid pressure changes is similarly decreased. A thin, electrically insulating element may optionally be disposed between the crystal side wall and the inner wall to preclude electrical grounding of the crystal to the housing. The electrically insulating element may comprise a discrete film, such as a high temperature plastic, or an insulating layer on the inner wall of the pressure housing.


Errol Eernisse Photo 3

Sensors For Measuring At Least One Of Pressure And Temperature, Sensor Arrays And Related Methods

US Patent:
2012018, Jul 19, 2012
Filed:
Jan 13, 2012
Appl. No.:
13/350577
Inventors:
Derek Wayne Puccio - Murray UT, US
Errol P. EerNisse - Salt Lake City UT, US
Assignee:
DELAWARE CAPITAL FORMATION, INC. - Wilmington DE
International Classification:
E21B 47/06, H01L 41/22
US Classification:
310338, 29 2535
Abstract:
Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.


Errol Eernisse Photo 4

Resonator Pressure Transducer Structure And Method Of Manufacture

US Patent:
4754646, Jul 5, 1988
Filed:
Jan 30, 1987
Appl. No.:
7/009144
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
G01L 1100
US Classification:
73702
Abstract:
A quartz resonator pressure transducer includes a generally disc-shaped resonator section adapted to vibrate in response to an oscillatory signal, a housing having sidewalls which generally circumscribe the resonator section and extend in opposite directions generally normal to the plane of the resonator section, and a web, thinner than the resonator section, joining the housing to the perimeter of the resonator section to define grooves between the sidewalls of the housing and the resonator section on the top and bottom sides of the section.


Errol Eernisse Photo 5

Transducer And Sensor Apparatus And Method

US Patent:
4802370, Feb 7, 1989
Filed:
Dec 29, 1986
Appl. No.:
6/947022
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
Assignee:
Halliburton Company - Duncan OK
International Classification:
G01F 1100, G01L 1904
US Classification:
73702
Abstract:
A sensor apparatus includes a pressure sensor, a reference device and a temperature sensor collocated within a common environment. The reference device and the temperature sensor are constructed to have temperature response times matched to the temperature response time of the pressure sensor to compensate for temperature gradients produced either by external heating or by pressure-volume heating.


Errol Eernisse Photo 6

Crystal Resonator With Low Acceleration Sensitivity And Method Of Manufacture Thereof

US Patent:
4837475, Jun 6, 1989
Filed:
Oct 2, 1987
Appl. No.:
7/103670
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
H01L 4104, H01L 4108, H01L 4122
US Classification:
310312
Abstract:
Crystal resonator with low acceleration sensitivity includes a piezoelectric quartz crystal, support structure for holding the crystal and a signal source for causing the crystal to resonate with an active region of vibration. The resonator is modified, if need be, to control (generally reduce) the gamma vector which is a measure of the acceleration senstivity. This may be done by adding mass, removing mass, or both adding and removing mass, all in order to move or change the shape of the active region of vibration and thereby reduce the gamma vector.


Errol Eernisse Photo 7

Crystal Resonator With Low Acceleration Sensitivity And Method Of Manufacture Thereof

US Patent:
5168191, Dec 1, 1992
Filed:
Sep 17, 1990
Appl. No.:
7/583140
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
O. Lew Wood - Murray UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
H01L 4108
US Classification:
310311
Abstract:
In a process of producing crystal resonators in which the direction and magnitude of the gamma vector is substantially the same for each resonator, a method of altering the resonator during the process to change the resonator mass, shape, or electrode placement so as to reduce the gamma vector magnitude of each crystal. This alteration may be done by adding mass, removing mass, or both adding and removing mass, or by positioning the electrodes to selectively position the electric field in the crystal, all in order to move the location of the active region of vibration and thereby reduce the gamma vector.


Errol Eernisse Photo 8

Method Of Manufacturing Crystal Resonators Having Low Acceleration Sensitivity

US Patent:
5022130, Jun 11, 1991
Filed:
Dec 26, 1989
Appl. No.:
7/456554
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
O. Lew Wood - Murray UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
H01L 4122
US Classification:
29 2535
Abstract:
In a process of producing crystal resonators in which the direction and magnitude of the gamma vector is substantially the same for each resonator, a method of altering the resonator during the process to change the resonator mass, shape, or electrode placement so as to reduce the gamma vector magnitude of each crystal. This alteration may be done by adding mass, removing mass, or both adding and removing mass, or by positioning the electrodes to selectively position the electric field in the crystal, all in order to move the location of the active region of vibration and thereby reduce the gamma vector.


Errol Eernisse Photo 9

Crystal Resonator With Low Acceleration Sensitivity And Method Of Manufacture Thereof

US Patent:
4935658, Jun 19, 1990
Filed:
Jul 13, 1988
Appl. No.:
7/218282
Inventors:
Errol P. EerNisse - Salt Lake City UT
Roger W. Ward - Park City UT
O. Lew Wood - Murray UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
H01L 4108
US Classification:
310312
Abstract:
In a process of producing crystal resonators in which the direction and magnitude of the gamma vector is substantially the same for each resonator, a method of altering the resonator during the process to change the resonator mass, shape, or electrode placement so as to reduce the gamma vector magnitude of each crystal. This alteration may be done by adding mass, removing mass, or both adding and removing mass, or by positioning the electrodes to selectively position the electric field in the crystal, all in order to move the location of the active region of vibration and thereby reduce the gamma vector.


Errol Eernisse Photo 10

Mounting Structure For Crystal Resonator

US Patent:
5030876, Jul 9, 1991
Filed:
Mar 24, 1989
Appl. No.:
7/328320
Inventors:
Errol P. EerNisse - Salt Lake City UT
Assignee:
Quartztronics, Inc. - Salt Lake City UT
International Classification:
H01L 4108
US Classification:
310353
Abstract:
Structure for mounting a disc-shaped crystal, having a top and bottom surface, of a crystal resonator includes four attachment pads affixed to the crystal on the bottom surface near the perimeter thereof, four base pads affixed to a base surface, and four generally elongate parallel support elements, each extending from a different one of the base pads to a different one of the attachment pads to support the crystal. The support elements are generally longitudinally rigid and laterally elastic so that lateral movement of the crystal may take place without torque being applied to either the pads or the crystal. In other words, when the crystal is moved sideways, the plane of the crystal remains generally parallel with the previous plane occupied by the crystal.