MR. ERIC SETH WEBB, MD
Marriage and Family Therapists at Fern Valley Rd, Medford, OR

8481432, Jul 9, 2013

May 26, 2011

13/116963

Steven T. Mayer - Lake Oswego OR, US
Daniel A. Koos - Portland OR, US
Eric Webb - Tigard OR, US

Novellus Systems, Inc. - Fremont CA

H01L 21/302

438754, 438745, 438747, 216100

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.

7972970, Jul 5, 2011

Jul 30, 2007

11/888312

Steven T. Mayer - Lake Oswego OR, US
Daniel A. Koos - Portland OR, US
Eric Webb - Tigard OR, US

Novellus Systems, Inc. - San Jose CA

H01L 21/302

438754, 438745, 216100

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.

8158532, Apr 17, 2012

Nov 20, 2006

11/602128

Steven T. Mayer - Lake Oswego OR, US
Mark L. Rea - Tigard OR, US
Richard S. Hill - Atherton CA, US
Avishai Kepten - Lake Oswego OR, US
R. Marshall Stowell - Wilsonville OR, US
Eric G. Webb - Tigard OR, US

Novellus Systems, Inc. - San Jose CA

H01L 21/302

438754, 438692, 438745, 438759, 216105

Plating accelerator is applied selectively to a substantially-unfilled wide (e. g. , low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e. g. , high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

7947163, May 24, 2011

Aug 6, 2007

11/890541

Steven T. Mayer - Lake Oswego OR, US
John Stephen Drewery - Santa Clara CA, US
Eric G. Webb - Tigard OR, US

Novellus Systems, Inc. - San Jose CA

C25F 3/14

205667, 205668

Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

8500985, Aug 6, 2013

Jul 13, 2007

11/827800

Steven T. Mayer - Lake Oswego OR, US
John Stephen Drewery - Santa Clara CA, US
Eric G. Webb - Tigard OR, US

Novellus Systems, Inc. - San Jose CA

C25D 5/34, C25D 5/00, C25D 5/02, B05D 5/00

205205, 205112, 205206, 205136, 427256

Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.