DR. ERIC R JOHNSON
Dietitian and Nutritionist at Thompson Peak Pkwy, Scottsdale, AZ

6429103, Aug 6, 2002

Apr 13, 2000

09/548791

Eric Shanks Johnson - Scottsdale AZ
Nyles Wynn Cody - Tempe AZ

Motorola, Inc. - Schaumburg IL

H01L 21265

438518, 438483, 438569, 438930

A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.

2007005, Mar 8, 2007

Aug 23, 2005

11/209295

Clarence Tracy - Tempe AZ, US
Eric Johnson - Scottsdale AZ, US
Papu Maniar - Mesa AZ, US

H01L 21/20

438479000

A method of forming III-V epitaxy on a germanium-on-insulator (GOI) substrate having a bonded layer and a handle substrate begins with measuring a lattice parameter of the bonded layer at a first temperature. The lattice parameter of the bonded layer, which is a function of a coefficient of thermal expansion (CTE) of the handle substrate, is then calculated at an epitaxial growth temperature. An epitaxial composition is selected from a class of III-V material for epitaxial growth overlying the bonded layer, wherein the selected epitaxial composition is adjusted to have a lattice parameter that approximates the calculated lattice parameter of the bonded layer at the epitaxial growth temperature. An epitaxial layer can then be grown over the bonded layer with use of the adjusted epitaxial composition, producing a substantially defect-free III-V epitaxial layer. Furthermore, an improved defectivity is claimed when the epitaxial layer's CTE is approximately similar to that of the handle substrate.

2005022, Oct 6, 2005

Mar 31, 2005

11/095848

Richard Grosser - Palm Desert CA, US
Eric Johnson - Scottsdale AZ, US

H04B001/38

455404100, 455403000

A portable radio bridge which allows most two-way radios to be interconnected regardless of the radio's frequency, modulation or encryption scheme to provide radio interoperability at the scene of a multi-jurisdictional emergency. The device channels the audio output from the external speaker jack on one radio to the microphone input jack on another radio. The process used is time division multiplexing. The device is microprocessor controlled and monitors input channels, determines if someone is speaking, and sends the audio to output channels in specified “talk groups”.

2007000, Jan 4, 2007

Jun 29, 2005

11/168242

Richard Grosser - Palm Desert CA, US
Eric Johnson - Scottsdale AZ, US

H04N 7/18, H04N 9/47

348143000

A portable wireless tracking device that uses radio-frequency identification (RFID) technology to monitor the location and physical condition of emergency personnel at the scene of an emergency incident. RFID technology uses radio-transmitting interrogators to send out radio waves to preprogrammed receiver computer chips which respond to the radio query with another radio signal. If the frequency is not correct, the receiver or interrogator will not recognize it. The invention also uses wireless remote stations that are placed in high rise buildings or other large commercial or infrastructure locations to provide facility managers and emergency responders with a reliable wireless emergency management and communications system. The remote stations can include broadband video, audio, two-way radio, as well as chemical and air flow data from life safety devices that can be used to monitor, direct, communicate and share with public safety agencies.

5475311, Dec 12, 1995

May 3, 1994

8/237706

Frederick Y. Cho - Higley AZ
Eric S. Johnson - Scottsdale AZ
Joseph W. Walsh - Mesa AZ

Motorola, Inc. - Schaumburg IL

G01N 2762, G01N 2770

324464

An ionization gas analyzer system includes an ionization chamber including ionization electrodes contained therein. The ionization chamber contains a test gas or gas mixture. A high voltage generator is coupled to the electrodes and provides variable high voltage pulses to the ionization electrodes. An ionization voltage analyzer is coupled to the ionization chamber and receives ionization voltage information from the plurality of ionization electrodes in response to the variable high voltages pulses. The ionization voltage analyzer produces a gas code identifier in response to the plurality of ionization voltages by defining a code based on which of the ionization voltages exceed an arbitrarily established reference level ionization voltage. A single ionization electrode system can be used to determine a concentration of a particular gas.

4994408, Feb 19, 1991

Feb 6, 1989

7/306600

Eric S. Johnson - Scottsdale AZ

Motorola Inc. - Schaumburg IL

H01L 2120

437133

A method for growing high quality epitaxial films using low pressure MOCVD that includes providing a substrate that is misoriented from a singular plane, placing the substrate into an MOCVD reactor at a total pressure of less than 0. 2 atmospheres and then growing an epitaxial film on the substrate. When providing a misoriented gallium arsenide substrate, the MOCVD reactor is set at a temperature in the range of 650 to 750 degrees centigrade to grow an aluminum gallium arsenide film. This temperature is substantially lower than that at which aluminum gallium arsenide epitaxial films are commonly grown and the resulting film has a smooth surface morphology and enhanced photoluminesence properties.

4717597, Jan 5, 1988

Mar 21, 1986

6/842690

Eric S. Johnson - Scottsdale AZ
Neal J. Mellen - Tempe AZ

Motorola Inc. - Schaumburg IL

C23C 1630

437 81

A permeable tube is inserted in a processing gas line to allow impurities surrounding the permeable tube to enter the processing line. By plumbing a steel tube in parallel with the permeable tube the process carrier gas can be switched from one tube to the other in rapid succession to allow pure or impure gases to enter into a reaction chamber. This can permit the growth of alternating layers of differently doped materials. As an example, it has been discovered that incorportaing small amounts of oxygen into an AlGaAs layer will produce a semi-insulating layer.