Eric L Brown
Nursing at Astrozon Cir, Colorado Springs, CO

License number
Colorado 160703
Issued Date
Feb 14, 1992
Renew Date
Jan 31, 1994
Expiration Date
Jan 31, 1994
Type
Certified Nurse Aide
Address
Address
2583 Astrozon Cir, Colorado Springs, CO 80916

Professional information

Eric Brown Photo 1

Eric Brown - Colorado Springs, CO

Work:
Level 3
Product Development Manager
TW telecom - Lone Tree, CO
Program Manager
Rivada Networks - Colorado Springs, CO
Program Manager
Rohmann Joint Venture - Air Force Academy, CO
Project Manager/Electronic Maintenance Lead
Pikes Peak International Raceway - Fountain, CO
Telecommunications lead
United States Air Force - Colorado Springs, CO
Radio Maintenance
Education:
Colorado Technical University - Colorado Springs, CO
Master of Science in Management, Information Technology Project Management
Colorado Technical University Colorado Christian University
Bachelor of Science in Information Systems Management
USAF Electronic Maintenance Technical School
Skills:
Project Management Institute (PMI) certified Project Management Professional PMP


Eric Brown Photo 2

Process Development Engineer - Etch At Atmel

Position:
Process Development Engineer - Etch at Atmel
Location:
Colorado Springs, Colorado Area
Industry:
Semiconductors
Work:
Atmel - Process Development Engineer - Etch


Eric Brown Photo 3

Polish Stop And Sealing Layer For Manufacture Of Semiconductor Devices With Deep Trench Isolation

US Patent:
7435661, Oct 14, 2008
Filed:
Jan 27, 2006
Appl. No.:
11/341010
Inventors:
Gayle Miller - Colorado Springs CO, US
Eric Brown - Colorado Springs CO, US
Assignee:
Atmel Corporation - San Jose CA
International Classification:
H01L 21/473
US Classification:
438424, 257E21546, 257524
Abstract:
A method and resulting device that eliminates vertical steps or gaps in a deep trench isolation region and, thus, eliminates or drastically reduces a possibility of polysilicon stringers. Additionally, the invention allows an inexpensive dielectric material, for example a lower-quality silicon dioxide to be used to fill the deep trench and a higher quality oxide, in an electrically active region, to be used on an uppermost portion of the deep trench without affecting device performance or increasing a possibility of forming polysilicon stringers.