ERIC I-HUNG LIN, D.O.
Marriage and Family Therapists at Sepulveda Blvd, Torrance, CA
License number
California 20A7966
Category
Medical Practice
Type
Neuromusculoskeletal Medicine & OMM
License number
California 20A7966
Category
Osteopathic Medicine
Type
Family Medicine
Address
Address
2
3220 Sepulveda Blvd SUITE 200, Torrance, CA 90505
PO Box 2525, Palos Verdes Estates, CA 90274
PO Box 2525, Palos Verdes Estates, CA 90274
Phone
(310) 325-8588
(310) 668-7268 (Fax)
(310) 668-7268 (Fax)
Organization information
See more information about ERIC I-HUNG LIN at bizstanding.comEric I-Hung Lin Inc - Eric I-Hung Lin MD
3220 Sepulveda Blvd STE 200, Torrance, CA 90505
Categories:
Family & General Practice Physicians & Surgeons
Phone:
(310) 325-8588 (Phone)
Eric I-Hung Lin, D.O., Inc
Palos Verdes Estates, CA
Registration:
Mar 21, 2002
Addresses:
28746 Golden Mdw Dr, Palos Verdes Estates, CA 90275
PO Box 2525, Palos Verdes Estates, CA 90274
PO Box 2525, Palos Verdes Estates, CA 90274
State ID:
02393747
Business type:
Articles of Incorporation
President:
Eric Lin (President)
Agent:
Jane Cu
Professional information
Dr. Eric I Lin, Torrance CA - DO (Doctor of Osteopathic Medicine)
Specialties:
Neuromusculoskeletal Medicine
Address:
Eric I-Hung Lin DO
3220 Sepulveda Blvd STE 200, Torrance 90505
(310) 325-8588 (Phone)
3220 Sepulveda Blvd STE 200, Torrance 90505
(310) 325-8588 (Phone)
Languages:
English
Education:
Medical School
Western Univ Of Health Sciences/College Of Osteopathic Medicine Of The Pacific, Western University Of Health Sciences
Graduated: 2000
Western Univ Of Health Sciences/College Of Osteopathic Medicine Of The Pacific, Western University Of Health Sciences
Graduated: 2000
Eric Ihung Lin, Torrance CA
Specialties:
Osteopathic Doctor
Address:
3220 Sepulveda Blvd, Torrance, CA 90505
Monolithic, Low-Noise, Synchronous Direct Detection Receiver For Passive Microwave/Millimeter-Wave Radiometric Imaging Systems
US Patent:
6052024, Apr 18, 2000
Filed:
Aug 26, 1997
Appl. No.:
8/947525
Inventors:
Chung-Wen Dennis Lo - Foster City CA
Barry R. Allen - Redondo Beach CA
Eric W. Lin - Rancho Palos Verdes CA
Gee Samuel Dow - Rancho Palos Verdes CA
Paul Shu Chung Lee - La Palma CA
Barry R. Allen - Redondo Beach CA
Eric W. Lin - Rancho Palos Verdes CA
Gee Samuel Dow - Rancho Palos Verdes CA
Paul Shu Chung Lee - La Palma CA
Assignee:
TRW Inc. - Redondo Beach CA
International Classification:
H03F 360, H03F 368
US Classification:
330 53
Abstract:
A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.
Monolithic, Low-Noise, Synchronous Direct Detection Receiver For Passive Microwave/Millimeter-Wave Radiometric Imaging Systems
US Patent:
5815113, Sep 29, 1998
Filed:
Aug 13, 1996
Appl. No.:
8/696451
Inventors:
Chung-Wen Dennis Lo - Foster City CA
Barry R. Allen - Redondo Beach CA
Eric W. Lin - Rancho Palos Verdes CA
Gee Samuel Dow - Rancho Palos Verdes CA
Paul Shu Chung Lee - La Palma CA
Barry R. Allen - Redondo Beach CA
Eric W. Lin - Rancho Palos Verdes CA
Gee Samuel Dow - Rancho Palos Verdes CA
Paul Shu Chung Lee - La Palma CA
Assignee:
TRW Inc. - Redondo Beach CA
International Classification:
G01S 302
US Classification:
342351
Abstract:
A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.