ENRIQUE E GARCIA, MD
Osteopathic Medicine at Park Ave, New York, NY
License number
New York 194953
Category
Osteopathic Medicine
Type
Internal Medicine
Address
Address
2
90 Park Ave ROOM 578, New York, NY 10016
1 Dickel Rd, Scarsdale, NY 10583
1 Dickel Rd, Scarsdale, NY 10583
Phone
(212) 551-4019
(914) 725-9892
(914) 725-9892
Personal information
See more information about ENRIQUE E GARCIA at radaris.comName
Address
Phone
4525 Henry Hudson Pkwy Frnt 1, Bronx, NY 10471
4525 Henry Hudson Pkwy APT 102, Bronx, NY 10471
4242 80Th St APT 3R, Flushing, NY 11373
52 E Kingsbridge Rd, Bronx, NY 10468
Professional information
Sales Engineer At Lightower Fiber Networks
Position:
Sales engineer at Lightower Fiber Networks, Sales Engineer at Sidera Networks
Location:
Greater New York City Area
Industry:
Information Technology and Services
Work:
Lightower Fiber Networks
- NYC since Apr 2013
-
Sales engineer
Sidera Networks
- Greater New York City Area since Jul 2012
-
Sales Engineer
AboveNet
- 111 8th avenue , NYC Aug 2011 - Jul 2012
-
IP Solutions Engineer
RCN
2009 - Aug 2011
-
Data Operations Engineer
Sidera Networks
2009 - Aug 2011
-
Data Engineer
Fried Frank
Sep 2007 - Mar 2009
-
Network Engineer
ThruPoint
2005 - 2007
-
consultant
AT&T
2000 - 2005
-
Technical support engineer
Education:
GCC 1997 - 1999
Enrique Garcia
Location:
Greater New York City Area
Industry:
Professional Training & Coaching
Languages:
Spanish
Dr. Enrique E Garcia, New York NY - MD (Doctor of Medicine)
Specialties:
Internal Medicine
Address:
EMANUEL DAVID J MD
90 Park Ave, New York 10016
(212) 551-4642 (Phone)
90 Park Ave, New York 10016
(212) 551-4642 (Phone)
Certifications:
Internal Medicine, 1995
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
State University of New York / Health Science Center At Stony Brook
Graduated: 1991
Montefiore Medical Center-Moses Division
Albert Einstein Coll Med
State University of New York / Health Science Center At Stony Brook
Graduated: 1991
Montefiore Medical Center-Moses Division
Albert Einstein Coll Med
Enrique E Garcia, New York NY
Specialties:
Internist
Address:
90 Park Ave, New York, NY 10016
High Speed Low Power Magnetic Devices Based On Current Induced Spin-Momentum Transfer
US Patent:
6980469, Dec 27, 2005
Filed:
Aug 19, 2003
Appl. No.:
10/643762
Inventors:
Andrew Kent - New York NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Özyilmaz - Brooklyn NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Özyilmaz - Brooklyn NY, US
Assignee:
New York University - New York NY
International Classification:
G11C011/14
US Classification:
365171, 365158, 365173, 3652255, 365 97, 365 66, 257421
Abstract:
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers.
High Speed Low Power Magnetic Devices Based On Current Induced Spin-Momentum Transfer
US Patent:
7170778, Jan 30, 2007
Filed:
Oct 13, 2005
Appl. No.:
11/250791
Inventors:
Andrew Kent - New York NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Ozyilmaz - Brooklyn NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Ozyilmaz - Brooklyn NY, US
Assignee:
New York University - New York NY
International Classification:
G11C 11/14
US Classification:
365171, 365158, 365173, 3652255, 365 97, 365 66
Abstract:
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers.