ENRIQUE E GARCIA, MD
Osteopathic Medicine at Park Ave, New York, NY
License number
New York 194953
Category
Osteopathic Medicine
Type
Internal Medicine
Address
Address
2
90 Park Ave ROOM 578, New York, NY 10016
1 Dickel Rd, Scarsdale, NY 10583
1 Dickel Rd, Scarsdale, NY 10583
Phone
(212) 551-4019
(914) 725-9892
(914) 725-9892
Professional information
Sales Engineer At Lightower Fiber Networks
Position:
Sales engineer at Lightower Fiber Networks, Sales Engineer at Sidera Networks
Location:
Greater New York City Area
Industry:
Information Technology and Services
Work:
Lightower Fiber Networks
- NYC since Apr 2013
-
Sales engineer
Sidera Networks
- Greater New York City Area since Jul 2012
-
Sales Engineer
AboveNet
- 111 8th avenue , NYC Aug 2011 - Jul 2012
-
IP Solutions Engineer
RCN
2009 - Aug 2011
-
Data Operations Engineer
Sidera Networks
2009 - Aug 2011
-
Data Engineer
Fried Frank
Sep 2007 - Mar 2009
-
Network Engineer
ThruPoint
2005 - 2007
-
consultant
AT&T
2000 - 2005
-
Technical support engineer
Education:
GCC 1997 - 1999
Enrique Garcia
Location:
Greater New York City Area
Industry:
Professional Training & Coaching
Languages:
Spanish
Dr. Enrique E Garcia, New York NY - MD (Doctor of Medicine)
Specialties:
Internal Medicine
Address:
EMANUEL DAVID J MD
90 Park Avenue, New York 10016
(212) 551-4642 (Phone)
90 Park Avenue, New York 10016
(212) 551-4642 (Phone)
Certifications:
Internal Medicine, 1995
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
State University of New York / Health Science Center At Stony Brook
Graduated: 1991
Montefiore Medical Center-Moses Division
Albert Einstein Coll Med
State University of New York / Health Science Center At Stony Brook
Graduated: 1991
Montefiore Medical Center-Moses Division
Albert Einstein Coll Med
Enrique E Garcia, New York NY
Specialties:
Internist
Address:
90 Park Ave, New York, NY 10016
High Speed Low Power Magnetic Devices Based On Current Induced Spin-Momentum Transfer
US Patent:
6980469, Dec 27, 2005
Filed:
Aug 19, 2003
Appl. No.:
10/643762
Inventors:
Andrew Kent - New York NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Özyilmaz - Brooklyn NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Özyilmaz - Brooklyn NY, US
Assignee:
New York University - New York NY
International Classification:
G11C011/14
US Classification:
365171, 365158, 365173, 3652255, 365 97, 365 66, 257421
Abstract:
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers.
High Speed Low Power Magnetic Devices Based On Current Induced Spin-Momentum Transfer
US Patent:
7170778, Jan 30, 2007
Filed:
Oct 13, 2005
Appl. No.:
11/250791
Inventors:
Andrew Kent - New York NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Ozyilmaz - Brooklyn NY, US
Enrique Gonzalez Garcia - New York NY, US
Barbaros Ozyilmaz - Brooklyn NY, US
Assignee:
New York University - New York NY
International Classification:
G11C 11/14
US Classification:
365171, 365158, 365173, 3652255, 365 97, 365 66
Abstract:
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers.