EDMOND ROWAN WARD
Pilots at Eaton Ln, Los Gatos, CA

6834008, Dec 21, 2004

Dec 26, 2002

10/330153

Darrell Rinerson - Cupertino CA
Christophe J. Chevallier - Palo Alto CA
Steven W. Longcor - Mountain View CA
Edmond R. Ward - Monte Sereno CA
Wayne Kinney - Emmett ID
Steve Kuo-Ren Hsia - San Jose CA

Unity Semiconductor Corporation - Sunnyvale CA

G11C 1100

365158, 365173, 365184

Cross point memory array using multiple modes of operation. The invention is a cross point memory array that uses a read mode to determine the resistive state of a memory plug, a first write mode to cause the memory plug to change from a first resistive state to a second resistive state, and a second write mode to cause the memory plug to change from the second resistive state back to the first resistive state.

6850429, Feb 1, 2005

Dec 26, 2002

10/330900

Darrell Rinerson - Cupertino CA, US
Steven W. Longcor - Mountain View CA, US
Steve Kuo-Ren Hsia - San Jose CA, US
Wayne Kinney - Emmett ID, US
Edmond R. Ward - Monte Sereno CA, US
Christophe J. Chevallier - Palo Alto CA, US

G11C 1100

365158, 365157, 36518524, 365 46, 365 48

Providing a cross point, memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory plug have substantially no effect on the resistive state and below which a voltage pulse will alter the resistance of the memory plug. Similarly, in the high resistive state, the second write threshold voltage is the point below which any voltages applied across the memory plug have substantially no effect on the resistive state and above which a voltage pulse will alter the resistance of the memory plug. The read voltages applied to the memory plug are typically above the first write threshold voltage and lower than the second write threshold voltage.

8062942, Nov 22, 2011

Jun 30, 2008

12/215958

Darrell Rinerson - Cupertino CA, US
Wayne Kinney - Emmett ID, US
Edmond Ward - Monte Sereno CA, US
Steve Kuo-Ren Hsia - San Jose CA, US
Steven W. Longcor - Mountain View CA, US
Christophe J. Chevallier - Palo Alto CA, US
Philip Swab - Santa Rosa CA, US

H01L 21/00

438238, 438382, 257E21004

A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

2005010, May 12, 2005

Nov 10, 2003

10/605963

Darrell Rinerson - Cupertino CA, US
Steve Hsia - San Jose CA, US
Steven Longcor - Mountain View CA, US
Wayne Kinney - Emmett ID, US
Edmond Ward - Monte Sereno CA, US
Christophe Chevallier - Palo Alto CA, US

UNITY SEMICONDUCTOR INC. - Sunnyvale CA

H01L021/336

438257000

A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.

6238735, May 29, 2001

Sep 8, 1999

9/391964

Robert P. Mandal - Saratoga CA
James C. Grambow - San Jose CA
Ted C. Dettes - Newark CA
Donald R. Sauer - San Jose CA
Emir Gurer - Sunnyvale CA
Edmond R. Ward - Monte Sereno CA

Silicon Valley Group, Inc. - San Jose CA

B05D 312

427240

A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapor and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.

7020012, Mar 28, 2006

Dec 13, 2004

11/012059

Darrell Rinerson - Cupertino CA, US
Steven W. Longcor - Mountain View CA, US
Christophe J. Chevallier - Palo Alto CA, US
Edmond R. Ward - Monte Sereno CA, US

G11C 11/02

365158, 365 69

Cross point memory array using distinct voltages. The invention is a cross point memory array that applies a first select voltage on one conductive array line, a second select voltage on a second conductive array line, the two conductive array lines being uniquely defined. Additionally, an unselect voltage is applied to the unselected conductive array lines. The unselect voltage can be applied before, after or during the selection process. The unselect voltage can be approximately equal to the average of the first select voltage and the second select voltage.

8611130, Dec 17, 2013

Nov 21, 2011

13/301490

Darrell Rinerson - Cupertino CA, US
Christophe Chevallier - Palo Alto CA, US
Steve Kuo-Ren Hsia - San Jose CA, US
Wayne Kinney - Emmett CA, US
Steven Longcor - Mountain View CA, US
John Sanchez, Jr. - Palo Alto CA, US
Philip Swab - Santa Rosa CA, US
Edmond Ward - Monte Sereno CA, US

Unity Semiconductor Corporation - Sunnyvale CA

H01L 21/64, G11C 11/21

365148, 438385

A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

5670210, Sep 23, 1997

Dec 1, 1995

8/566227

Robert P. Mandal - Saratoga CA
James C. Grambow - San Jose CA
Ted C. Bettes - Newark CA
Donald R. Sauer - San Jose CA
Emir Gurer - Sunnyvale CA
Edmond R. Ward - Monte Sereno CA

Silicon Valley Group, Inc. - San Jose CA

B05D 312

427240

A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution is deposited onto the surface of the substrate in the housing and the substrate is then spun. The control gas and any solvent vapour and particulate contaminants suspended in the control gas are exhausted from the housing through an outlet and the solvent vapor concentration is controlled by controlling the temperature of the housing and the solvent from which the solvent vapor-bearing gas is produced. Instead the concentration can be controlled by mixing gases having different solvent concentrations. The humidity of the gas may also be controlled.

2006017, Aug 3, 2006

Mar 30, 2005

11/095026

Darrell Rinerson - Cupertino CA, US
Christophe Chevallier - Palo Alto CA, US
Wayne Kinney - Emmett ID, US
Roy Lambertson - Los Altos CA, US
Steven Longcor - Mountain View CA, US
John Sanchez - Palo Alto CA, US
Lawrence Schloss - Palo Alto CA, US
Philip Swab - Santa Rosa CA, US
Edmond Ward - Monte Sereno CA, US

UNITY SEMICONDUCTOR CORPORATION - SUNNYVALE CA

G11C 11/34

365185100

A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

7180772, Feb 20, 2007

Jul 11, 2005

11/179790

Darrell Rinerson - Cupertino CA, US
Steven W. Longcor - Mountain View CA, US
Edmond R. Ward - Monte Sereno CA, US
Wayne Kinney - Emmett ID, US

G11C 11/14

365171, 365173, 365158

A cross point array and peripheral circuitry that accesses the cross point array. The peripheral circuitry receives a supply voltage of approximately 1. 8 volts or less, generates voltages of a magnitude not more than approximately 3 volts, and senses current that is indicative of a nonvolatile memory state.