Inventors:
Anthony Buonassisi - Cambridge MA, US
Mariana Bertoni - Somerville MA, US
Ali Argon - Belmont MA, US
Sergio Castellanos - Sonora, MX
Alexandria Fecych - Somerville MA, US
Douglas Powell - Highland Heights OH, US
Michelle Vogl - Dekalb IL, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 29/04
US Classification:
257 75, 257 52, 257 59, 257 72, 438 57, 438 58, 438 97
Abstract:
A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.