Inventors:
Ajeet Rohatgi - Atlanta GA, US
Dong Seop Kim - Atlanta GA, US
Kenta Nakayashiki - Smyrna GA, US
Brian Rounsaville - Stockbridge GA, US
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
H01L 21/00
US Classification:
438460, 148 333, 148 335, 438558, 438560
Abstract:
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.