Inventors:
Emi Ishida - Sunnyvale CA
Scott Luning - San Francisco CA
Don Draper - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 21336
Abstract:
A process in accordance with the invention enables the manufacturability of raised source-drain MOSFETs. In accordance with the invention, a raised source-drain material, having a window therein, is formed over the substrate. A gate oxide and window sidewall oxides are subsequently formed. Dopants are diffused into the substrate. A gate is formed within the window.