DO YOUNG KIM
Physician at Beaujardin Dr, Lansing, MI

License number
Florida 24082
Issued Date
Jan 6, 2017
Effective Date
Jan 6, 2017
Expiration Date
Jun 30, 2019
Category
Health Care
Type
Registration for Resident/HSE Physician
Address
Address 2
3101 Beaujardin Dr APT #303, Lansing, MI 48910
1600 SW Archer Rd D2-39 BOX 100289, Gainesville, FL 32610
Phone
(347) 681-5698

Professional information

Do Kim Photo 1

Method And Apparatus For Integrating An Infrared (Hr) Pholovoltaic Cell On A Thin Photovoltaic Cell

US Patent:
2014006, Mar 6, 2014
Filed:
Apr 3, 2012
Appl. No.:
14/009979
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra K. Pradhan - Marietta GA, US
Assignee:
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - Gainesville FL
International Classification:
H01L 51/52
US Classification:
257 40, 438 29
Abstract:
Embodiments of the subject invention relate to a method and apparatus for providing an at: least partially transparent one-side emitting OLED. The at least partially transparent one-side emitting OLED can include a mirror, such as a mirror substrate, substrate with a transparent anode and a transparent cathode. The mirror can allow at least a portion of the visible spectrum of light to pass through, while also reflecting at least another portion of the visible spectrum of light. The mirror can reflect at least a portion of the visible light emitted by a light emitting layer of the OLED incident on a first surface of the mirror, while allowing another portion of the visible light incident on a second surface of the mirror to pass through the mirror.


Do Kim Photo 2

Method And Apparatus For Providing A Charge Blocking Layer On An Infrared Up-Conversion Device

US Patent:
2012018, Jul 26, 2012
Filed:
May 24, 2011
Appl. No.:
13/114896
Inventors:
FRANKY SO - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Dong Woo Song - Gainesville FL, US
Galileo Sarasqueta - Gainesville FL, US
Bhabendra K. Pradhan - Marietta GA, US
Assignee:
NANOHOLDINGS, LLC - Rowayton CT
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - Gainesville FL
International Classification:
G01J 5/20, H01L 51/54
US Classification:
250340, 257 40, 257E51026
Abstract:
Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with upconversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.


Do Kim Photo 3

Method And Apparatus For Providing A Window With An At Least Partially Transparent One Side Emitting Oled Lighting And An Ir Sensitive Photovoltaic Panel

US Patent:
2014007, Mar 13, 2014
Filed:
Apr 3, 2012
Appl. No.:
14/009994
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra K. Pradhan - Marietta GA, US
Assignee:
NANOHOLDINGS, LLC - Rowayton CT
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC - Gainesville FL
International Classification:
H01L 27/32
US Classification:
257 40, 438 25
Abstract:
Embodiments of the subject invention relate to a method and apparatus for providing a apparatus that can function as a photovoltaic cell, for example during the day, and can provide solid state lighting, for example at night. The apparatus can therefore function as a lighting window. An embodiment can integrate an at least partially transparent one-side emitting OLED and a photovoltaic cell. The photovoltaic cell can be sensitive to infrared light, for example light having a wavelength greater than 1 μm. The apparatus can be arranged such that the one direction in which the OLED emits is toward the inside of a building or other structure and not out into the environment.


Do Kim Photo 4

Method And Apparatus For Sensing Infrared Radiation

US Patent:
2012028, Nov 15, 2012
Filed:
Nov 24, 2010
Appl. No.:
13/511869
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Assignee:
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC. - Gainesville FL
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC. - GAINESVILLE FL
International Classification:
H01L 31/147, H01L 51/44
US Classification:
257 82, 257E51012, 257E311, 977954
Abstract:
Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.


Do Kim Photo 5

Ir Photodetectors With High Detectivity At Low Drive Voltage

US Patent:
2012012, May 24, 2012
Filed:
Oct 13, 2011
Appl. No.:
13/272995
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Galileo Sarasqueta - Chandler AZ, US
Bhabendra K. Pradhan - Marietta GA, US
Assignee:
NANOHOLDINGS, LLC - Rowayton CT
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - Gainesville FL
International Classification:
H01L 51/46, H01L 51/44
US Classification:
257 21, 257 40, 257E51026, 257E51015
Abstract:
An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.


Do Kim Photo 6

Infrared Pass Visible Blocker For Upconversion Devices

US Patent:
8598573, Dec 3, 2013
Filed:
Oct 13, 2011
Appl. No.:
13/272886
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra Pradhan - Marietta GA, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
Nanoholdings, LLC - Rowayton CT
International Classification:
H01L 29/08, H01L 27/15, H01L 21/00, H05B 33/00
US Classification:
257 40, 257 79, 438 22, 2504842
Abstract:
An IR-to-Visible up-conversion device with a stacked layer structure includes an IR pass visible blocking layer such that the IR entry face of the stacked device allows IR radiation, particularly NIR radiation, to enter the device but visible light generated by a light emitting diode (LED) layer to be blocked from exit at that IR entry face of the device. The device has an IR transparent electrode at the IR entry face and a visible light transparent electrode such that the visible light can exit the device at a visible light detection face opposite the IR entry face.


Do Kim Photo 7

Method And Apparatus For Integrating An Infrared (Ir) Photovoltaic Cell On A Thin Film Photovoltaic Cell

US Patent:
2014006, Mar 6, 2014
Filed:
Apr 3, 2012
Appl. No.:
14/009945
Inventors:
Franky SO - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra K. Pradhan - Gainesville FL, US
Assignee:
NANOHOLDINGS, LLC - Rowayton CT
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. - Gainesville FL
International Classification:
H01L 31/0687
US Classification:
136244, 438 80
Abstract:
Embodiments of the subject invention relate to solar panels, methods of fabricating solar panels, and methods of using solar panels to capture and store solar energy. An embodiment of a solar panel can include a photovoltaic cell that is sensitive to visible light and an infrared photovoltaic cell that is sensitive to light having a wavelength of greater than 0.70 μm.


Do Kim Photo 8

Up-Conversion Device With Broad Band Absorber

US Patent:
8592801, Nov 26, 2013
Filed:
Oct 13, 2011
Appl. No.:
13/272928
Inventors:
Franky So - Gainesville FL, US
Do Young Kim - Gainesville FL, US
Bhabendra Pradhan - Marietta GA, US
Jae Woong Lee - Gainesville FL, US
Assignee:
University of Florida Research Foundation, Inc. - Gainesville FL
Nanoholdings, LLC - Rowayton CT
International Classification:
H01L 31/00, H01L 29/08, H01L 33/00
US Classification:
257 21, 257 40, 257 80
Abstract:
Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (NIR) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention.