Dennis M Young, II
Electrician at Delmonico Dr, Colorado Springs, CO
License number
Colorado 970149
Issued Date
Dec 16, 1996
Renew Date
Apr 25, 1997
Type
Electrical Apprentice
Address
Address
6515 Delmonico Dr, Colorado Springs, CO 80919
Personal information
See more information about Dennis M Young at radaris.comName
Address
Phone
493 Tapadero Rd, Bailey, CO 80421
453 E Wonder View Ave #123, Estes Park, CO 80517
5341 Blackcloud Loop, Colorado Springs, CO 80922
Professional information
Elect Design Engineer Mts At Cypress Semiconductor
Position:
Elect Design Engineer MTS at Cypress Semiconductor
Location:
Colorado Springs, Colorado Area
Industry:
Semiconductors
Work:
Cypress Semiconductor
- Colorado Spring, Colorado since Nov 2012
-
Elect Design Engineer MTS
Ramtron International Corp
Jan 1994 - Nov 2012
-
Design Services Manager
Harris Semiconductor
Jan 1976 - Dec 1993
-
Principal Engineer
Integrated Logic Systems Inc
Jan 1985 - Aug 1987
-
Application Manager
Education:
North Carolina State University 1971 - 1975
BSEE, Electrical and Electronics Engineering
BSEE, Electrical and Electronics Engineering
Skills:
IC, Semiconductors, Mixed Signal, CMOS, ASIC, RTL design, Integrated Circuit Design, Primetime, SoC, Verilog, EDA, Analog, Analog Circuit Design, Hardware Architecture, Low-power Design, Physical Design, Timing Closure, Physical Verification, Cadence Virtuoso
Low Loss, Regulated Charge Pump With Integrated Ferroelectric Capacitors
US Patent:
5889428, Mar 30, 1999
Filed:
Jun 6, 1995
Appl. No.:
8/468861
Inventors:
Dennis Young - Colorado Springs CO
Assignee:
Ramtron International Corporation - Colorado Springs CO
International Classification:
G05F 110
US Classification:
327536
Abstract:
A charge pump for increasing the value of an input voltage includes a plurality of serially coupled charge pump stages, wherein each charge pump stage includes a P-channel pass transistor coupled to a first end of a capacitor. The gates of the P-channel pass transistors and the second ends of the capacitors in odd-numbered charge pump stages receive a first phase clock signal, and the gates of the pass transistors and the second ends of the capacitors in even-numbered charge pump stages receive a second phase clock signal, except that the second end of the capacitor in the last charge pump stage is coupled to ground. To increase the value of the capacitors in an integrated circuit embodiment all of the capacitors, except for the capacitor in the last stage, are ideally ferroelectric capacitors. In a preferred embodiment, the charge pump is one component in a regulated charge pump system that also includes a voltage regulator and a controlled oscillator. In operation, the voltage regulator determines whether the boosted output voltage is greater or less than a predetermined target output voltage and accordingly selectively controls the operation of the oscillator.
High Data Rate Serial Ferroelectric Memory
US Patent:
2003014, Aug 7, 2003
Filed:
Feb 5, 2002
Appl. No.:
10/068596
Inventors:
Mary Hackbarth - Colorado Springs CO, US
Rodney Roark - Colorado Springs CO, US
Donald Verhaeghe - Colorado Springs CO, US
Dennis Young - Colorado Springs CO, US
Rodney Roark - Colorado Springs CO, US
Donald Verhaeghe - Colorado Springs CO, US
Dennis Young - Colorado Springs CO, US
International Classification:
G11C007/00
US Classification:
365/189120
Abstract:
A method for accessing data in a serial ferroelectric memory device including an input shift register coupled to a ferroelectric memory array including a plurality of memory cells arranged in a number of rows and columns thereof, the memory array having associated row, column, and segment decoders, includes clocking a serial address into the input shift register and starting a read access before the serial address is completely shifted into the input shift register. A read access can be started before an input bit sequence containing row, column, and segment decoder addresses has been completely clocked into the memory.
Imprint-Free Coding For Ferroelectric Nonvolatile Counters
US Patent:
7176824, Feb 13, 2007
Filed:
Nov 21, 2003
Appl. No.:
10/719108
Inventors:
Xiao Hong Du - Colorado Springs CO, US
Dennis C. Young - Colorado Springs CO, US
Dennis C. Young - Colorado Springs CO, US
Assignee:
Ramtron International - Colorado Springs CO
International Classification:
H03M 1/82
US Classification:
341152, 341 50, 341 51
Abstract:
An encoder utilizes a coding method for use with ferroelectric or other nonvolatile counters which are subject to imprint ensures that all of the bits in the code are frequently switched and not left in a fixed data state. The general coding equation for this method is such that: for an even integer n, it is represented by the conventional binary code of n/2; for an odd integer n, it is represented by the conventional binary code of the one's compliment of (n−1)/2. With this method, every bit switches to its compliment when counting from an even number to an odd number so that imprint is substantially reduced.
Imprint-Free Coding For Ferroelectric Nonvolatile Counters
US Patent:
7271744, Sep 18, 2007
Filed:
Dec 14, 2006
Appl. No.:
11/611053
Inventors:
Xiao Hong Du - Colorado Springs CO, US
Dennis C. Young - Colorado Springs CO, US
Dennis C. Young - Colorado Springs CO, US
Assignee:
Ramtron International - Colorado Springs CO
International Classification:
H03M 7/00, H03M 1/82
US Classification:
341 50, 341 51, 341152
Abstract:
An encoder utilizes a coding method for use with ferroelectric or other nonvolatile counters which are subject to imprint ensures that all of the bits in the code are frequently switched and not left in a fixed data state. The general coding equation for this method is such that: for an even integer n, it is represented by the conventional binary code of n/2; for an odd integer n, it is represented by the conventional binary code of the one's compliment of (n−1)/2. With this method, every bit switches to its compliment when counting from an even number to an odd number so that imprint is substantially reduced.