Deborah K Rodriguez
Radiology at Magnolia Dr, Melbourne, FL
License number
Florida 39105
Effective Date
Jan 5, 1996
Expiration Date
Dec 31, 1995
Category
Health Care
Type
Radiologic Technology
Address
Address
110-B N Magnolia Dr, Melbourne, FL 32937
Personal information
See more information about Deborah K Rodriguez at radaris.comName
Address
Phone
4713 SW 144Th Ct, Miami, FL 33175
4930 S 84Th St, Tampa, FL 33619
460 Forrest Dr, Miami Springs, FL 33166
423 SW 19Th Rd, Miami, FL 33129
5820 N Church Ave UNIT 246, Tampa, FL 33614
Professional information
See more information about Deborah K Rodriguez at trustoria.com
Fill And Etchback Process Using Dual Photoresist Sacrificial Layer And Two-Step Etching Process For Planarizing Oxide-Filled Shallow Trench Structure
Fill And Etchback Process Using Dual Photoresist Sacrificial Layer And Two-Step Etching Process For Planarizing Oxide-Filled Shallow Trench Structure
US Patent:
5516625, May 14, 1996
Filed:
Sep 8, 1993
Appl. No.:
8/118063
Inventors:
Jeanne M. McNamara - Palm Bay FL
Deborah K. Rodriguez - Palm Bay FL
David H. Leebrick - Palm Bay FL
Deborah K. Rodriguez - Palm Bay FL
David H. Leebrick - Palm Bay FL
Assignee:
Harris Corporation - Melbourne FL
International Classification:
G03F 726
US Classification:
430314
Abstract:
To planarize an oxide-filled shallow trench-isolated semiconductor architecture, a composite photoresist sacrificial layer is initially formed on the oxide-filled structure. The composite photoresist layer contains photoresist plugs which are reflowed to fill depressions in the oxide fill layer overlying the trench, and an overlying photoresist layer which effectively planarizes the depression-filled trench oxide layer. Respective photoresist and oxide selective etching chemistries are then successively applied to first etch the composite sacrificial photoresist layer and then etch the trench fill oxide layer down to the surface of an etch stop polysilicon layer. Since the thickness of the polysilicon etch stop layer is initially formed so as to extend above the mesa layer of the trench-isolated semiconductor structure by a relatively nominal height, after planarization, the top surface of the trench fill oxide layer still extends above the surface of the mesa to prevent shorting of a subsequently formed polysilicon gate layer with underlying mesa material, while being sufficiently low enough to avoid sidewall stringer formation.