DAVID V. YOUNG, MD
Radiology at Fresno St, Fresno, CA

2006008, Apr 20, 2006

Oct 15, 2004

10/966491

Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard Ratowsky - Berkeley CA, US
David Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US

H01L 31/109

257186000

Starved source diffusion methods for forming avalanche photodiodes (APDs) are provided for controlling the edge effect. The edge effect is controlled by reducing edge gain near the edges of an APD active region. This is accomplished by creating a sloped diffusion front near the edges of the active region. The sloped diffusion front is advantageously formed in a single doping step by using a patterned mask during doping. The patterned mask reduces the depth to which dopants diffuse in areas where it only partly covers the underlying layer. By covering more of the underlying layer nearer the edge and progressively less towards the center, the sloped diffusion front is formed. The shallower diffusion depth near the edge reduces the edge gain, and therefore the edge effect. As a result, an APD to fiber misalignment is less likely, and possibility of edge breakdown is greatly reduced.

8034648, Oct 11, 2011

May 15, 2007

11/749007

Yuk Lung Ha - San Jose CA, US
David Bruce Young - Oakland CA, US
Ashish Verma - San Jose CA, US
Roman Dimitrov - San Jose CA, US

Finisar Corporation - Sunnyvale CA

H01L 21/00, H01L 21/31, H01L 21/469

438 39, 438505, 438760

Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8. 00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1. 90*10^18/cm3 and approximately 2.

7573925, Aug 11, 2009

May 15, 2007

11/749013

David Bruce Young - Oakland CA, US
Yuk Lung Ha - San Jose CA, US
Ashish Verma - San Jose CA, US
Lars Eng - Los Altos CA, US

Finisar Corporation - Sunnyvale CA

H01S 5/00

372 4301, 372 4501, 372 4601

Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.

7606279, Oct 20, 2009

May 15, 2007

11/749033

Ashish K. Verma - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Yuk Lung Ha - San Jose CA, US
Roman Dimitrov - San Jose CA, US

Finisar Corporation - Sunnyvale CA

H01S 5/00

372 4501, 372 4301, 372 4601

Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized.

7813395, Oct 12, 2010

Jun 12, 2008

12/138361

Ashish K. Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US

Finisar Corporation - Sunnyvale CA

H01S 5/00

372 4301, 372 4601, 372 5011, 372 96

In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

2013028, Oct 31, 2013

Jul 1, 2013

13/932971

Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US

H01S 5/12

398137, 372 4401, 398182

In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.

7553690, Jun 30, 2009

Jun 14, 2005

11/151929

Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard P. Ratowsky - Berkeley CA, US
David Bruce Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US

Finisar Corporation - Sunnyvale CA

H01L 21/00

438 91, 438 93, 438 94, 438 57

This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.