DAVID S GOLDSTEIN, M.D.
Osteopathic Medicine at State Route 27, Edison, NJ

License number

New Jersey MA040384

Personal information

See more information about DAVID S GOLDSTEIN at radaris.com

Name

Address

Phone

David Goldstein, age 60

49 Twin Rivers Dr, East Windsor, NJ 08520

(609) 443-6164

David Goldstein, age 68

4 Harvest Ct, Jackson, NJ 08527

(732) 979-5280

David Goldstein, age 71

49 Duffield Dr, South Orange, NJ 07079

David Goldstein, age 54

4 Steven Ter, West Orange, NJ 07052

(973) 325-1812

David Goldstein, age 64

44 Taylor Ave #B, East Brunswick, NJ 08816

(732) 613-7424

Organization information

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Pulmonary Internists - David S Goldstein MD

2 State Rte 27 STE 301, Edison, NJ 08820

Categories:

Internal Medicine Physicians & Surgeons, Physicians & Surgeons, Pulmonary & Respiratory Physicians & Surgeons

Phone:

(732) 549-7380 (Phone)

Professional information

David S Goldstein, Edison NJ

Specialties:

Pulmonologist

Address:

2 State Route 27, Edison, NJ 08820

Education:

Yeshiva University, Albert Einstein College of Medicine - Doctor of Medicine
Montefiore Medical Center - Fellowship - Pulmonary Disease (Internal Medicine)
Jacobi Medical Center - Residency - Internal Medicine

Board certifications:

American Board of Internal Medicine Certification in Internal Medicine, American Board of Internal Medicine Sub-certificate in Critical Care Medicine (Internal Medicine), American Board of Internal Medicine Sub-certificate in Pulmonary Disease (Internal Medicine), American Board of Internal Medicine Sub-certificate in Sleep Medicine (Internal Medicine)

Dr. David S Goldstein, Edison NJ - MD (Doctor of Medicine)

Specialties:

Critical Care Medicine, Pulmonology, Sleep Medicine

Address:

Sleep Disorder Center Of NJ
2 Lincoln Ave SUITE 301, Edison 08837
(908) 789-4244 (Phone)
6535 N Charles St SUITE 625, Towson 21204
(410) 825-5454 (Phone)
Pulmonary Internists PA
3 Hospital Plz SUITE 205, Old Bridge 08857
(732) 360-2255 (Phone)
Pulmonary Internists PA
2 State Route 27 SUITE 301, Edison 08820
(732) 549-7380 (Phone)
2253 South Ave SUITE 7, Scotch Plains 07076
(908) 789-4244 (Phone)

Certifications:

Critical Care Medicine, 1999, Internal Medicine, 1983, Pulmonary Disease, 1986, Sleep Medicine, 2007

Awards:

Healthgrades Honor Roll

Languages:

English, Spanish

Hospitals:

Sleep Disorder Center Of NJ
2 Lincoln Ave SUITE 301, Edison 08837
Pulmonary Internists PA
2 State Route 27 SUITE 301, Edison 08820
Pulmonary Internists PA
3 Hospital Plz SUITE 205, Old Bridge 08857
2253 South Ave SUITE 7, Scotch Plains 07076
6535 N Charles St SUITE 625, Towson 21204
Robert Wood Johnson University Hospital
1 Robert Wood Johnson Pl, New Brunswick 08903

Education:

Medical School
Albert Einstein College Of Medicine Of Yeshiva University
Graduated: 1980
Bronx Muni Hospital Center Einstei
Einstein
Graduated: 1985

Method For Etching Of Silicon Carbide Semiconductor Using Selective Etching Of Different Conductivity Types

US Patent:

6034001, Mar 7, 2000

Filed:

Feb 17, 1994

Appl. No.:

8/198511

Inventors:

Joseph S. Shor - Flushing NY
Anthony D. Kurtz - Teaneck NJ
David Goldstein - Edison NJ

Assignee:

Kulite Semiconductor Products, Inc. - Leonia NJ

International Classification:

H01L 2348, H01L 2352, H01L 2940

US Classification:

438931

Abstract:

A method for selective conductivity etching of a silicon carbide (SiC) semiconductor includes forming a p-type SiC layer on a substrate layer, forming an n-type SiC layer on the p-type SiC layer, and photoelectrochemically etching selected portions of the n-type SiC layer by applying a bias voltage to the n-type SiC layer in a hydrofluoric acid (HF) solution while exposing the layer to a pattern of UV light. The bias potential is selected so that the n-type SiC layer will photo-corrode and the p-type SiC layer will be inert and act as an etch stop. The light pattern exposure of the n-type SiC layer may be done by applying a photolithographic mask to the layer, by projecting a collimated light beam through a patterned mask, or by scanning with a focused micrometer-sized laser beam on the semiconductor surface.

High Temperature Transducers And Methods Of Fabricating The Same Employing Silicon Carbide

US Patent:

5165283, Nov 24, 1992

Filed:

May 2, 1991

Appl. No.:

7/694490

Inventors:

Anthony D. Kurtz - Teaneck NJ
David Goldstein - Edison NJ
Joseph S. Shor - Flushing NY

Assignee:

Kulite Semiconductor Products, Inc. - Leonia NJ

International Classification:

G01L 906

US Classification:

73727

Abstract:

There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.