DR. DAVID PAUL MYERS, M.D.
Osteopathic Medicine at Alliance Blvd, Plano, TX

License number

Texas M1960

Personal information

See more information about DAVID PAUL MYERS at radaris.com

Name

Address

Phone

David Myers, age 71

489 Fm 3172, Shelbyville, TX 75973

(361) 779-0995

David Myers, age 87

4720 Canyon Cir, Tyler, TX 75706

(903) 521-7190

David Myers, age 64

5016 Woodlawn Dr, Groves, TX 77619

(409) 962-2339

David Myers, age 88

502 Highland Dr, Athens, TX 75751

(361) 215-8086

David Myers

441 Fawn Ridge Dr Apt 208, Dallas, TX 75224

(214) 395-5913

Professional information

See more information about DAVID PAUL MYERS at trustoria.com

Dr. David P Myers, Plano TX - MD (Doctor of Medicine)

Specialties:

Critical Care Medicine, Pulmonary Critical Care Medicine

Address:

Dallas Diagnostic Association
4708 Alliance Blvd SUITE 300, Plano 75093
(469) 800-6000 (Phone)

Languages:

English

Hospitals:

Dallas Diagnostic Association
4708 Alliance Blvd SUITE 300, Plano 75093
Baylor Regional Medical Center at Plano
4700 Alliance Blvd, Plano 75093

Education:

Medical School
University of Texas Southwestern Medical Center At Dallas
Graduated: 1998

David Paul Myers, Plano TX

Specialties:

Pulmonologist

Address:

4708 Alliance Blvd, Plano, TX 75093

Education:

Doctor of Medicine

Board certifications:

American Board of Internal Medicine Certification in Internal Medicine, American Board of Internal Medicine Sub-certificate in Critical Care Medicine (Internal Medicine), American Board of Internal Medicine Sub-certificate in Pulmonary Disease (Internal Medicine)

Optoelectronic Displays Using Uniformly Spaced Arrays Of Semisphere Light Emitting Diodes And Method Of Fabricating Same

US Patent:

4152712, May 1, 1979

Filed:

Sep 19, 1977

Appl. No.:

5/834630

Inventors:

David J. Myers - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 3300

US Classification:

357 17

Abstract:

Light emitting diodes in a substantially semispherical form having an outer shell-like region of semiconductor material of one conductivity type and a subsurface body of semiconductor material of an opposite conductivity type forming a p-n junction are mounted to a surface of an insulating substrate member extending therefrom to allow a portion of each diode element to protrude past the outer surface of the substrate. Metallic coatings are provided on both the outer shell-like semiconductor material having one conductivity and a second metallic coating is provided on the subsurface body semiconductor material having a second conductivity for electrical contact. A transparent conductive material is further disposed over the diode structure connecting diodes formed in an array.

Glass Support Light Energy Converter

US Patent:

4270263, Jun 2, 1981

Filed:

Aug 10, 1978

Appl. No.:

5/932671

Inventors:

Elwin L. Johnson - Dallas TX
Jack S. Kilby - Dallas TX
Jay W. Lathrop - Clemson SC
John S. McFerren - Dallas TX
David J. Myers - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 724

US Classification:

29590

Abstract:

Semiconductor particles are distributed in a single level layer orientation in a glass sheet with portions of each particle exposed at both surfaces of the sheet. A metal layer on one surface of the sheet is in ohmic contact with the body of each particle and forms a common electrode.

Optoelectronic Displays Using Uniformly Spaced Arrays Of Semi-Sphere Light-Emitting Diodes

US Patent:

4165474, Aug 21, 1979

Filed:

Dec 27, 1977

Appl. No.:

5/865037

Inventors:

David J. Myers - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 3300, H05B 3302, H05B 3320

US Classification:

313500

Abstract:

Light-emitting p-n junction diode elements in the form of ion implanted spheres are mounted to a surface of an insulating substrate member. Metallic coatings are provided on both the semiconductor material and the implanted region for electrical contact. A transparent conductor material is then further disposed over the diode structure connecting diodes and forming an array.