DAVID MICHAEL GRANT
Pilots at Waterside Ln, Thousand Oaks, CA

6710864, Mar 23, 2004

Mar 5, 2003

10/382669

David L. Grant - Thousand Oaks CA 91360
David S. Marx - Long Beach CA 90815

G01N 2100

356 731

An apparatus and method of ascertaining the position of a core within a fiberoptic cable and calculating the position of the core relative to the cladding and jacket of the fiberoptic cable. The apparatus provides for observing of the end of the fiberoptic cable by using grazing incident illumination which causes the diameter of the core, the diameter of the cladding and the diameter of the jacket of the fiberoptic cable to be readily observed and then utilizing of a microscope and associated software to read the average diameter of the core and its position relative to the average diameter of the cladding and the average diameter of the jacket which will then make a determination as to how far off center the core is relative to the cladding and the jacket.

7477401, Jan 13, 2009

Oct 28, 2005

11/261284

David S. Marx - Westlake Village CA, US
David L. Grant - Thousand Oaks CA, US

Tamar Technology, Inc. - Newbury Park CA

G01B 11/24

356609

A system for the measurement of high aspect ratio trenches. The preferred embodiment consists of three elements: a) an integrated microscope and optical height sensor, b) an axially dispersive, afocal lens system, which is included in the optical height sensor, and c) an algorithm for processing the optical height sensor data to produce the depth of the high aspect ratio trench. The present invention combines a traditional imaging microscope with a chromatic confocal, single point, height sensor. This combination instantaneously provides an image of the object and the height value at one point in the image. No mechanical movement is necessary anywhere in the system to achieve that result. The chromatic confocal height sensor is integrated with a traditional microscope through the use of separate wavelength bands such as a wavelength band in the visible part of the spectrum, and a wavelength band in the infrared or ultraviolet part of the spectrum.

7738113, Jun 15, 2010

Oct 29, 2007

11/978881

David S. Marx - Westlake Village CA, US
David L. Grant - Thousand Oaks CA, US
Michael A. Mahoney - Chatsworth CA, US
Tsan Yuen Chan - San Gabriel CA, US

Tamar Technology, Inc. - Newbury Park CA

G01B 11/02

356496

A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i. e. , using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.

4863271, Sep 5, 1989

Feb 2, 1988

7/151617

David C. Grant - Thousand Oaks CA
Kevin D. Grobsky - Canyon Country CA
Joseph J. Purrazzella - Southampton NY

Litton Systems, Inc. - Beverly Hills CA

G01C 1964

356350

The apparatus of this invention is a composite combining prism for combining the beams of a ring laser gyro. It uses a composite prism whose trunk is fabricated of two substantially identical juxtaposed sub-prisms having beam splitters in the region where laser beams cross their common boundary. The beam splitter regions are very thin dielectric films, typically no thicker than a fraction of a wavelength of the laser light. Dielectric films, such as titanium dioxide, are used for the splitters so that the geometrical path lengths of interfering beams are almost exactly the same. To make the path lengths optically the same, the two sub-prisms and the substrate of the partly transmitting corner mirror of the ring laser preferably have the same index of refraction. In a first embodiment, the outwardly-extending trunk of the assembled composite prism is substantially rectangular in cross-section. It is split into two identical sub-prisms with negligible-thickness beam splitters at the common interface of the sub-prisms.

2007014, Jun 28, 2007

Sep 26, 2006

11/527902

David S. Marx - Westlake Village CA, US
David L. Grant - Thousand Oaks CA, US
Michael A. Mahoney - Chatsworth CA, US
Tsan Yuen Chen - San Gabriel CA, US

H01L 21/66

438 14

A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.

8649016, Feb 11, 2014

Jun 15, 2011

13/134716

David S. Marx - Newbury Park CA, US
David L. Grant - Newbury Park CA, US

Rudolph Technologies, Inc. - Flanders NJ

G01N 21/55, G01B 9/02

356445, 356454

A system () for directly measuring the depth of a high aspect ratio etched feature on a wafer () that includes an etched surface () and a non-etched surface (). The system () utilizes an infrared reflectometer () that in a preferred embodiment includes a swept laser (), a fiber circulator (), a photodetector () and a combination collimator () and an objective lens (). From the objective lens () a focused incident light () is produced that is applied to the non-etched surface () of the wafer (). From the wafer () is produced a reflected light () that is processed through the reflectometer () and applied to an ADC () where a corresponding digital data signal () is produced. The digital data signal () is applied to a computer () that, in combination with software (), measures the depth of the etched feature that is then viewed on a display ().

2012025, Oct 11, 2012

Apr 8, 2011

13/066219

David S. Marx - Newbury Park CA, US
David L. Grant - Newbury Park CA, US

G01B 9/02

356451

A device () and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device () is comprised of a source/receiver section () having a broadband source (), a receiver () and a signal processing section (). An interferometer () separates or combines measurement and reference light and has a measurement leg () and a reference leg (), and a reference mirror (). The device () analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.

4383763, May 17, 1983

May 8, 1981

6/261851

Thomas J. Hutchings - Thousand Oaks CA
David C. Grant - Thousand Oaks CA
Gary D. Babcock - Mission Viejo CA

Litton Systems, Inc. - Beverly Hills CA

G01B 902

356350

A mirror constrained to translation and whose position is controlled by a piezoelectric ceramic operating as a bimorph.