DAVID LEWIS ADLER
Pilots at Guadalupe Mines Ct, San Jose, CA

6803571, Oct 12, 2004

Jun 26, 2003

10/607226

Marian Mankos - San Francisco CA
David L. Adler - San Jose CA

KLA-Tencor Technologies Corporation - Milpitas CA

H01J 3726

250310, 250307, 250305

In accordance with one embodiment, the disclosure pertains to an apparatus for inspection of substrates. The apparatus includes at least a dual-energy e-beam source, an energy-dependent dispersive device, a beam separator, and an objective lens. The dual-energy e-beam source is configured to generate both a higher-energy e-beam component and a lower-energy e-beam component. Said two components exit the dual-energy e-source co-axially. The energy-dispersive device is configured to introduce dispersion between the two components. The components exit the dispersive device at different angles of trajectory. The beam separator is configured to receive the two dispersed components and substantially cancel the dispersion previously introduced by the dispersive device. As a result, the two components are rejoined in trajectory. Finally, the objective lens configured to focus said two rejoined components onto an area of the substrate.

6803572, Oct 12, 2004

Jul 1, 2003

10/610722

Lee Veneklasen - Castro Valley CA
David L. Adler - San Jose CA

KLA-Tencor Technologies Corporation - Milpitas CA

G01N 23225

250310, 250306, 250307

Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled. The apparatus further includes a detector arranged to detect secondary electrons originating from the sample as a result of the first and second electron beam interacting with the sample.

6586733, Jul 1, 2003

May 25, 2000

09/579867

Lee Veneklasen - Castro Valley CA
David L. Adler - San Jose CA

KLA-Tencor - San Jose CA

G01N 23225

250306, 250307, 250310

Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled. The apparatus further includes a detector arranged to detect secondary electrons originating from the sample as a result of the first and second electron beam interacting with the sample.

8284394, Oct 9, 2012

Feb 9, 2007

11/673150

Michael D. Kirk - San Jose CA, US
Christopher F. Bevis - Los Gatos CA, US
David Adler - San Jose CA, US
Kris Bhaskar - San Jose CA, US

KLA-Tencor Technologies Corp. - Milpitas CA

G01N 21/00

3562375, 3562371, 3562372

Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.

6211518, Apr 3, 2001

Nov 18, 1998

9/195097

Neil Richardson - Palo Alto CA
Farid Askary - Santa Clara CA
Stefano E. Concina - San Jose CA
Kevin M. Monahan - Cupertino CA
David L. Adler - San Jose CA

Kla-Tencor Corporation - San Jose CA

H01J 3700

250310

A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.

7656170, Feb 2, 2010

Feb 14, 2007

11/675013

Gustavo A. Pinto - Belmont CA, US
Brian C. Leslie - Cupertino CA, US
David L. Adler - San Jose CA, US
Akella V. S. Satya - Milpitas CA, US
Robert Thomas Long - Santa Cruz CA, US
David J. Walker - Sunol CA, US

KLA-Tencor Technologies Corporation - Milpitas CA

G01R 31/02

324751, 324501, 324765

Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

7012439, Mar 14, 2006

Feb 15, 2005

11/058943

Gustavo A. Pinto - Belmont CA, US
Brian C. Leslie - Cupertino CA, US
David L. Adler - San Jose CA, US
Akella V. S. Satya - Milpitas CA, US
Robert Thomas Long - Santa Cruz CA, US
David J. Walker - Sunol CA, US

KLA-Tencor Technologies Corporation - Milpitas CA

G01R 31/304

324751, 324501, 324750

Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

2008024, Oct 9, 2008

Feb 14, 2007

11/675021

Akella V.S. Satya - Milpitas CA, US
Gustavo A. Pinto - Belmont CA, US
David L. Adler - San Jose CA, US
Robert Thomas Long - Santa Cruz CA, US
Neil Richardson - Palo Alto CA, US
Kurt H. Weiner - San Jose CA, US
David J. Walker - Sunol CA, US
Lynda C. Mantalas - Campbell CA, US
Padma A. Satya - Milpitas CA, US

H01L 23/58, H01L 21/00

257 48, 438 5, 257E23001, 257E21001

Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

6872942, Mar 29, 2005

Nov 5, 2003

10/701857

David L. Adler - San Jose CA, US

KLA-Tencor Technologies Corporation - Milpitas CA

G01N023/22, G21K003/10, H01J037/20

250306, 250307, 250310, 250397, 250398, 250400, 2504911, 2504923

One embodiment disclosed relates to a method for inspecting a substrate. The method includes exposing the substrate to an incident beam, inducing relative motion between the incident beam and the substrate, and detecting charged particles emitted from the substrate. The relative motion is such that the beam travels over a surface of the substrate along a substantially spiral shaped path.

7315022, Jan 1, 2008

Jan 6, 2005

11/031091

David L. Adler - San Jose CA, US
Mark A. McCord - Los Gatos CA, US
Mehdi Vaez-Iravani - Los Gatos CA, US
Liqun Han - Fremont CA, US
Kirk J. Bertsche - San Jose CA, US

KLA-Tencor Technologies Corporation - Milpitas CA

H01J 37/20, G01R 31/28

250310, 250306, 250307, 250397

One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.