DR. DAVID LEE-HUN CHANG, O.D.
Optometry in Saratoga, CA

License number

California OPT 10836 TPL

Professional information

Thicker Oxide Formation At The Trench Bottom By Selective Oxide Deposition

US Patent:

6709930, Mar 23, 2004

Filed:

Jun 21, 2002

Appl. No.:

10/176570

Inventors:

Ben Chan - San Francisco CA
Kam Hong Lui - Santa Clara CA
Christiana Yue - Milpitas CA
Ronald Wong - Millbrae CA
David Chang - Saratoga CA
Frederick P. Giles - San Jose CA
Kyle Terrill - Santa Clara CA
Mohamed N. Darwish - Campbell CA
Deva Pattanayak - Cupertino CA
Robert Q. Xu - Fremont CA
Kuo-in Chen - Los Altos CA

Assignee:

Siliconix Incorporated - Santa Clara CA

International Classification:

H01L 21336

US Classification:

438270, 438212, 438268, 438272, 438589

Abstract:

A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.