DR. DAVID LARKHAM COLLINS, MD
Radiology at Arista St, San Diego, CA

License number
California G9453
Category
Radiology
Type
Surgery
Address
Address
4430 Arista St, San Diego, CA 92103
Phone
(619) 297-5749

Professional information

David Collins Photo 1

General Manager At Express Tire, Inc.

Position:
General Manager at Express Tire, inc.
Location:
Greater San Diego Area
Industry:
Management Consulting
Work:
Express Tire, inc. - Greater San Diego Area since Dec 2011 - General Manager ARS National Services Jan 2011 - Dec 2011 - Account Executive TLC Painting Jul 2007 - Aug 2010 - CUSTOMER RELATIONS / PROJECT MANAGER HSBC / ALLPOINTE Bank Jan 2004 - Jun 2007 - Mortgage Broker / Account Executive Staples & Stevens, Inc. Jan 2003 - Dec 2004 - DIRECTOR OF SALES & MARKETING Southern Wheel & Motorsport, Inc. Jan 1995 - Jan 2002 - REGIONAL MANAGER
Education:
University of Southern Mississippi 1989 - 1994
Hudson High 1980 - 1988
Skills:
Contract Negotiation, Negotiation, Operations Management, Team Building, Sales, Sales Management, Account Management, Customer Service, Business Strategy, New Business Development, Budgets, Strategic Planning, Forecasting, Business Planning, Business Development, Coaching, Banking, Sales Presentations, Retail, Management, Project Management, Vendor Management, Purchasing, Recruiting, Marketing Strategy, Performance Management, Income Statement, Training, Sales Operations, Customer Satisfaction, Risk Management, Logistics, Financial Analysis, Marketing, CRM, Direct Sales, Customer Retention, Leadership, Process Improvement, Business Process Improvement, Call Centers, Leadership Development, Business Analysis, Finance


David Larkham Collins Photo 2

David Larkham Collins, San Diego CA

Specialties:
Surgeon
Address:
8010 Frost St, San Diego, CA 92123
Education:
McGill University, Faculty of Medicine - Doctor of Medicine
Massachusetts General Hospital - Fellowship - Surgery
Vancouver Coastal Health-Vancouver General Hospital-Jim Pattison PAvilion - Residency - Surgery
Vancouver Coastal Health-Vancouver General Hospital-Jim Pattison PAvilion - Residency - Pathology
Children's Hospital Boston - Residency - Surgery
Board certifications:
American Board of Surgery Certification in Surgery


David L Collins Photo 3

Dr. David L Collins, San Diego CA - MD (Doctor of Medicine)

Specialties:
Pediatric Surgery
Address:
4430 Arista St, San Diego 92103
(619) 297-5749 (Phone), (619) 297-5749 (Fax)
Certifications:
General Surgery, 1962, Pediatric Surgery, 1982
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
McGill University / Faculty of Medicine
Vancouver Genl Hosp
Boston Chldns Hosp
Harvard Med Ctr


David Collins Photo 4

David Collins - San Diego, CA

Work:
Western Refining
Warehouse Lead Manager
Adecco
General Associate
Ross Stores, Inc
Stage Mover/Loader
CEC Entertainment
Game Attendant
Education:
Moreno Valley High School
Diploma


David Collins Photo 5

Retired Md At Pediatric Surgery Medical Group Of San Diego, Inc

Position:
retired MD at Pediatric Surgery Medical Group of San Diego, Inc
Location:
Greater San Diego Area
Industry:
Medical Practice
Work:
Pediatric Surgery Medical Group of San Diego, Inc - retired MD


David Collins Photo 6

Systems And Methods Of Integrating Virtual Flyovers And Virtual Tours

US Patent:
2012016, Jun 28, 2012
Filed:
Mar 5, 2012
Appl. No.:
13/412546
Inventors:
David Collins - San Diego CA, US
International Classification:
G09G 5/00, H04N 11/02
US Classification:
345629, 37524001, 375E07026
Abstract:
Integration of a virtual flyover and a virtual tour of a location through creation of a combined video sequence are provided. The combined video seamlessly transitions a virtual flyover of an area into a virtual tour of the interior of an object, such as a house or building. Sequences of images corresponding to the virtual flyover or even a proprietary virtual flyover file format are converted into a video file format and then combined with a sequence of images from the virtual tour to create a combined video of the virtual flyover and virtual tour. The combined video labels locations of interest through the video, provides narrations and can also integrate a street-level view into the combined video to provide a user with a singular video tour of a location of interest and a surrounding area which may be viewed on any computer, portable electronic device or television.


David Collins Photo 7

Furnace Transient Anneal Process

US Patent:
4555273, Nov 26, 1985
Filed:
Feb 27, 1984
Appl. No.:
6/583560
Inventors:
David A. Collins - San Diego CA
Derek L. Lile - San Diego CA
Carl R. Zeisse - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 21324, H01L 21265
US Classification:
148 15
Abstract:
A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature may be about 5. degree. above the desired anneal temperature of the semiconductor sample such that the sample temperature rises to within a few degrees of the furnace temperature within seconds. Utilizing the moveable furnace insures uniform heating without elaborate temperature control or expensive beam generating equipment. The apparatus and process of the present invention are utilized for rapid annealing of ion-implanted indium phosphide semiconductors within 10 to 30 seconds and at temperatures of approximately 700. degree. C. , thereby eliminating undesired and damaging movement of impurities within the ion-implanted InP.


David Collins Photo 8

Method Of Anodically Leveling Semiconductor Layers

US Patent:
4166782, Sep 4, 1979
Filed:
Nov 6, 1978
Appl. No.:
5/958459
Inventors:
David A. Collins - San Diego CA
Derek L. Lile - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
C25F 312, C25F 314
US Classification:
2041293
Abstract:
A method for the thinning and automatic leveling of layers of a semicondur for use in device fabrication applications. The method is to be employed with anodic thinning wherein a conducting semiconductor layer on a high resistivity substrate is placed in a suitable electrolyte and voltage is applied so that the sample is made positive with respect to a cathode, also immersed in the electrolyte. The instant method is directed to the anodic thinning of irregularities in the semiconductor by slowly immersing the semiconductor into the electrolyte such that the location of irregularities can be determined and processed by monitoring the anodic process.


David Collins Photo 9

Electrolytic Blocking Contact To Inp

US Patent:
4241167, Dec 23, 1980
Filed:
May 25, 1979
Appl. No.:
6/042466
Inventors:
David A. Collins - San Diego CA
Derek L. Lile - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2166
US Classification:
430314
Abstract:
A liquid barrier contact to InP made of 40% tartatic acid and 30% hydrogen peroxide in a 3:1 ratio by volume is used for capacitance-voltage carrier profiling to large voltages (>10 V) on relatively heavily doped material (>10. sup. 17 CM. sup. -3) and at room temperature.


David Collins Photo 10

Normally Off Inp Field Effect Transistor Making Process

US Patent:
4372032, Feb 8, 1983
Filed:
Mar 30, 1981
Appl. No.:
6/248185
Inventors:
David A. Collins - San Diego CA
Derek L. Lile - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 2124
US Classification:
29571
Abstract:
A normally off insulated gate field effect transistor having a p-type sin crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge the space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate.