DAVID L HILL
Medical Practice in Orlando, FL
License number
Florida 53173
Expiration Date
Dec 1, 1996
Category
Health Care
Type
Emergency Medical Technician
Address
Address
117 W Priceton St, Orlando, FL 32804
Professional information
David P. Hill, Orlando FL - Lawyer
Address:
214 Annie St, Orlando, FL 32806
Specialties:
Appeals & Appellate, Broker Fraud, Criminal Law, Domestic Violence, DUI & DWI, Juvenile Law, Assault, Battery, Check Fraud, Credit Card Fraud, Drug Offenses, Embezzlement, Fraud, Health Care Fraud, Manslaughter, Post Convictions, Rico, Robbery, Sex Offenses, Shoplifting, Theft, Violation of Probation, Weapon Offenses, White Collar Crimes, Marijuana Charges, Bail Reduction, DWLSR, Probation, Early Termination of Probation, Seal & Expunge
Law School:
University of North Carolina - Chapel Hill
Fees:
Credit Cards Accepted, Free Consultation
Biography:
About David P. HillDavid Hill obtained his undergraduate and law degrees from the University of North Carolina at Chapel Hill and is admitted to practice before the U.S. District Court, Middle Distric...
Links:
Website
Regional Delivery Manager At Ericsson
Position:
Regional Delivery Manager at Ericsson
Location:
Dallas/Fort Worth Area
Industry:
Logistics and Supply Chain
Work:
Ericsson
- Orlando, FL since Feb 2011
-
Regional Delivery Manager
Nokia Siemens Networks
Apr 2007 - Feb 2011
-
NAM Logistics Key User
Nokia
Jul 2006 - Apr 2007
-
CORE Logistics Coordinator
Robert Half International
Jun 2005 - Jul 2006
-
Logistics Coordinator
Kids In Distress
May 1995 - Apr 2004
-
Purchasing/Inventory Manager
Education:
DeVry Institute of Technology 1989 - 1992
Skills:
SAP, Vendor Management, Supply Chain Management, Telecommunications, Supply Management, Training, Supply Chain, Logistics, Logistics Management, Account Management, Purchasing, Materials Management
President/Attorne At Law Offices Of David P. Hill, P.a.
Position:
owner/attorney at Law Offices of David P. Hill, P.A.
Location:
Orlando, Florida Area
Industry:
Law Practice
Work:
Law Offices of David P. Hill, P.A.
since Feb 1998
-
owner/attorney
Education:
University of North Carolina at Chapel Hill 1982 - 1990
BA ('86) JD (90)
BA ('86) JD (90)
Interests:
mountainbiking, road biking, racquetball,
Software Engineer At Lockheed Martin
Position:
Software Engineer at CAE
Location:
Orlando, Florida Area
Industry:
Computer Software
Work:
CAE
since Nov 2010
-
Software Engineer
Lockheed Martin
Jun 2000 - Oct 2010
-
Software Engineer Sr.
Dr. David R Hill, Orlando FL - MD (Doctor of Medicine)
Specialties:
Infectious Disease Medicine
Address:
LOCH HAVEN OBGYN GROUP
235 E Princeton St STE 200, Orlando 32804
(407) 303-1444 (Phone), (407) 893-9470 (Fax)
235 E Princeton St STE 200, Orlando 32804
(407) 303-1444 (Phone), (407) 893-9470 (Fax)
Certifications:
Infectious Disease, 1984, Internal Medicine, 1980
Awards:
Healthgrades Honor Roll
Languages:
English
Education:
Medical School
University of Rochester
Graduated: 1977
Strong Memorial Hospital
University Of Virginia Medical Center
University of Rochester
Graduated: 1977
Strong Memorial Hospital
University Of Virginia Medical Center
David Hill, Orlando FL
Work:
Loch Haven Ob/Gyn Group
235 E Princeton St, Orlando, FL 32804
235 E Princeton St, Orlando, FL 32804
Information Technology And Services Professional
Location:
Orlando, Florida Area
Industry:
Information Technology and Services
Method For Making Free-Standing Aigan Wafer, Wafer Produced Thereby, And Associated Methods And Devices Using The Wafer
US Patent:
7169227, Jan 30, 2007
Filed:
Mar 25, 2003
Appl. No.:
10/396986
Inventors:
Herbert Paul Maruska - Winter Springs FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US
Assignee:
Crystal Photonics, Incorporated - Sanford FL
International Classification:
C30B 25/12, C30B 25/14
US Classification:
117 95, 117 89, 117 94, 117101, 117105
Abstract:
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.
Method For Making Group Iii Nitride Devices And Devices Produced Thereby
US Patent:
7033858, Apr 25, 2006
Filed:
Mar 18, 2004
Appl. No.:
10/803467
Inventors:
Bruce H. T. Chai - Oviedo FL, US
John Joseph Gallagher - Winter Park FL, US
David Wayne Hill - Orlando FL, US
John Joseph Gallagher - Winter Park FL, US
David Wayne Hill - Orlando FL, US
Assignee:
Crystal Photonics, Incorporated - Sanford FL
International Classification:
C30B 25/18
US Classification:
438106, 117101, 117105
Abstract:
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
Method For Making Free-Standing Algan Wafer, Wafer Produced Thereby, And Associated Methods And Devices Using The Wafer
US Patent:
7576372, Aug 18, 2009
Filed:
Jan 26, 2007
Appl. No.:
11/627712
Inventors:
Herbert Paul Maruska - Winter Springs FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US
Assignee:
Crystal Photonics, Incorporated - Sanford FL
International Classification:
H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336
US Classification:
257190, 257183, 257200, 117 89, 117 94
Abstract:
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.