DAVID K YOUNG
Osteopathic Medicine at Paseo Granada, San Dimas, CA
License number
California G58856
Category
Osteopathic Medicine
Type
Emergency Medicine
Address
Address
2
1785 Paseo Granada, San Dimas, CA 91773
2100 Powell St SUITE 900, Oakland, CA 94608
2100 Powell St SUITE 900, Oakland, CA 94608
Phone
(909) 592-7458
(510) 350-2600
(510) 350-2600
Professional information
David Young - Oakland, CA
Education:
Oakland High School
General Education Cal Poly
BS in Engineering University of the Pacific
MA in Economics San Francisco City College
Visual Communication Department Cal Poly - Fort Knox, KY
aviation
General Education Cal Poly
BS in Engineering University of the Pacific
MA in Economics San Francisco City College
Visual Communication Department Cal Poly - Fort Knox, KY
aviation
Dr. David K Young, San Dimas CA - MD (Doctor of Medicine)
Specialties:
Family Medicine
Address:
1785 Paseo Granada, San Dimas 91773
(909) 592-7458 (Phone)
(909) 592-7458 (Phone)
Certifications:
Family Practice, 1988
Awards:
Healthgrades Honor Roll
Languages:
English, Chinese, Mandarin
Hospitals:
1785 Paseo Granada, San Dimas 91773
Pomona Valley Hospital Medical Center
1798 North Garey Ave, Pomona 91767
Pomona Valley Hospital Medical Center
1798 North Garey Ave, Pomona 91767
Education:
Medical School
University of Miami / School of Medicine
Madigan Army Medical Center
Riverside Genl Hosp
University of Miami / School of Medicine
Madigan Army Medical Center
Riverside Genl Hosp
Starved Source Diffusion For Avalanche Photodiode
US Patent:
2006008, Apr 20, 2006
Filed:
Oct 15, 2004
Appl. No.:
10/966491
Inventors:
Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard Ratowsky - Berkeley CA, US
David Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard Ratowsky - Berkeley CA, US
David Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US
International Classification:
H01L 31/109
US Classification:
257186000
Abstract:
Starved source diffusion methods for forming avalanche photodiodes (APDs) are provided for controlling the edge effect. The edge effect is controlled by reducing edge gain near the edges of an APD active region. This is accomplished by creating a sloped diffusion front near the edges of the active region. The sloped diffusion front is advantageously formed in a single doping step by using a patterned mask during doping. The patterned mask reduces the depth to which dopants diffuse in areas where it only partly covers the underlying layer. By covering more of the underlying layer nearer the edge and progressively less towards the center, the sloped diffusion front is formed. The shallower diffusion depth near the edge reduces the edge gain, and therefore the edge effect. As a result, an APD to fiber misalignment is less likely, and possibility of edge breakdown is greatly reduced.
Epitaxial Regrowth In A Distributed Feedback Laser
US Patent:
8034648, Oct 11, 2011
Filed:
May 15, 2007
Appl. No.:
11/749007
Inventors:
Yuk Lung Ha - San Jose CA, US
David Bruce Young - Oakland CA, US
Ashish Verma - San Jose CA, US
Roman Dimitrov - San Jose CA, US
David Bruce Young - Oakland CA, US
Ashish Verma - San Jose CA, US
Roman Dimitrov - San Jose CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 21/00, H01L 21/31, H01L 21/469
US Classification:
438 39, 438505, 438760
Abstract:
Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8. 00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1. 90*10^18/cm3 and approximately 2.
Semiconductor Laser Having A Doped Active Layer
US Patent:
7573925, Aug 11, 2009
Filed:
May 15, 2007
Appl. No.:
11/749013
Inventors:
David Bruce Young - Oakland CA, US
Yuk Lung Ha - San Jose CA, US
Ashish Verma - San Jose CA, US
Lars Eng - Los Altos CA, US
Yuk Lung Ha - San Jose CA, US
Ashish Verma - San Jose CA, US
Lars Eng - Los Altos CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4501, 372 4601
Abstract:
Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.
Thin Inp Spacer Layer In A High Speed Laser For Reduced Lateral Current Spreading
US Patent:
7606279, Oct 20, 2009
Filed:
May 15, 2007
Appl. No.:
11/749033
Inventors:
Ashish K. Verma - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Yuk Lung Ha - San Jose CA, US
Roman Dimitrov - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Yuk Lung Ha - San Jose CA, US
Roman Dimitrov - San Jose CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4501, 372 4301, 372 4601
Abstract:
Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized.
Distributed Feedback Laser Having Enhanced Etch Stop Features
US Patent:
7813395, Oct 12, 2010
Filed:
Jun 12, 2008
Appl. No.:
12/138361
Inventors:
Ashish K. Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4601, 372 5011, 372 96
Abstract:
In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.
Distributed Feedback Laser Having Enhanced Etch Stop Features
US Patent:
2013028, Oct 31, 2013
Filed:
Jul 1, 2013
Appl. No.:
13/932971
Inventors:
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
International Classification:
H01S 5/12
US Classification:
398137, 372 4401, 398182
Abstract:
In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer.
Starved Source Diffusion For Avalanche Photodiode
US Patent:
7553690, Jun 30, 2009
Filed:
Jun 14, 2005
Appl. No.:
11/151929
Inventors:
Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard P. Ratowsky - Berkeley CA, US
David Bruce Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard P. Ratowsky - Berkeley CA, US
David Bruce Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 21/00
US Classification:
438 91, 438 93, 438 94, 438 57
Abstract:
This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.
Distributed Feedback Laser Having Enhanced Etch Stop Features
US Patent:
8477817, Jul 2, 2013
Filed:
Oct 11, 2010
Appl. No.:
12/902000
Inventors:
Ashish K. Verma - San Jose CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Tsurugi Sudo - San Jose CA, US
Sumesh Mani K. Thiyagarajan - Fremont CA, US
David Bruce Young - Oakland CA, US
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01S 5/00
US Classification:
372 4301, 372 4601, 372 5011, 372 96
Abstract:
In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.