DAVID JOHN NORTON
Pilots at Tree Rdg Rd, Knoxville, TN

6716795, Apr 6, 2004

Sep 27, 1999

09/406190

David P. Norton - Knoxville TN
Chan Park - Knoxville TN
Amit Goyal - Knoxville TN

UT-Battelle, LLC - Oak Ridge TN

H01B 1200

505238, 505237, 428701, 428702, 428930

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO and/or HfO. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO and HfO. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

2002019, Dec 19, 2002

Jul 30, 2002

10/208229

David Norton - Knoxville TN, US
Chan Park - Knoxville TN, US
Amit Goyal - Knoxville TN, US

H01L039/00, B32B001/00, H01L039/24, B32B009/00, B32B019/00

428/701000, 505/238000, 505/470000

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO, HfO, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrOand/or HfO. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO, HfO, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrOand HfO. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

6214712, Apr 10, 2001

Sep 16, 1999

9/397719

David P. Norton - Knoxville TN

UT-Battelle, LLC - Oak Ridge TN

H01L 213205, H01L 2930, H01L 2131, C23C 1428, C30B 2952

438591

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO. sub.

5741377, Apr 21, 1998

Apr 10, 1995

8/419583

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Martin Marietta Energy Systems, Inc. - Oak Ridge TN

C22F 100

148512

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

5739086, Apr 14, 1998

May 22, 1996

8/651291

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Lockheed Martin Energy Systems, Inc. - Oak Ridge TN

C30B 2922

505473

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

5958599, Sep 28, 1999

Jan 9, 1998

9/005381

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Lockheed Martin Energy Research Corporation - Oak Ridge TN

B32B 1504, H01L 3900

428457

A biaxially textured alloy article includes a rolled and annealed biaxially textured base metal substrate characterized by an x-ray diffraction phi scan peak of no more than 20. degree. FWHM; and a biaxially textured layer of an alloy or another material on a surface thereof. The article further includes at least one of an electromagnetic device or an electro-optical device epitaxially joined to the alloy.

5898020, Apr 27, 1999

May 22, 1996

8/650249

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

H01L 3900, B32B 1504

505239

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

5968877, Oct 19, 1999

Jun 26, 1996

8/670871

John D. Budai - Oakridge TN
David K. Christen - Oakridge TN
Amit Goyal - Knoxville TN
Qing He - Knoxville TN
Donald M. Kroeger - Knoxville TN
Dominic F. Lee - Knoxville TN
Frederick A. List - Andersonville TN
David P. Norton - Knoxville TN
Mariappan Paranthaman - Knoxville TN
Brian C. Sales - Knoxville TN
Eliot D. Specht - Knoxville TN

Lockheed Martin Energy Research Corp - Oak Ridge TN

C30B 2922

505237

A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO. sub. 2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J. sub. c) in the range of at least 100,000 A/cm. sup. 2 at 77 K.