DAVID J WALKER
Funeral Home and Crematory in Greenfield, MA
License number
Massachusetts 5598
Expiration Date
Oct 31, 2007
Type
Type 3 Funeral Director and Embalmer
Address
Address
Greenfield, MA 01302
Professional information
Fabrication Of Gunn Diode Semiconductor Devices
US Patent:
5145809, Sep 8, 1992
Filed:
Dec 4, 1990
Appl. No.:
7/622057
Inventors:
David K. Walker - Greenfield MA
Assignee:
Millitech Corporation - South Deerfield MA
International Classification:
H01L 21302, H01L 21329
US Classification:
437203
Abstract:
An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process and the active layer is deposited onto the buffer layer. Electrical connection to the InP layers is made by etching a via through the GaAs substrate and metallizing the walls of the via. After the device has been placed in its final package, the GaAs substrate material is removed. As a result, good thermal and electrical contact is made to the InP active layer, and therefore, a Gunn diode manufactured according to this invention can reliably produced greater output power.