DAVID I.A. WATTS
Nursing at Collier St, Austin, TX
License number
Texas 559739
Category
Nursing
Type
Psychiatric/Mental Health, Adult
Address
Address
1430 Collier St, Austin, TX 78704
Phone
(512) 472-4357
(512) 703-1394 (Fax)
(512) 703-1394 (Fax)
Personal information
See more information about DAVID I.A. WATTS at radaris.comName
Address
Phone
5115 Shadow Glen Dr, Grapevine, TX 76051
4862 Prairie Smt, Seguin, TX 78155
4801 Oakwood Dr APT 600, Odessa, TX 79761
6004 Laurel Valley Ct, Fort Worth, TX 76132
5830 Bridgegate Dr, Spring, TX 77373
Professional information
See more information about DAVID I.A. WATTS at trustoria.com
David Watts - Austin, TX
David Watts - Austin, TX
Work:
United Healthcare Group - Community and State
A. ADMINISTRATIVE AND QUALITY POSITIONS City of Austin - Austin, TX
Quality Manager, Ryan White Program Seton Healthcare Network - Austin, TX
HealthCare Analyst/Sr. Coordinator Patient Safety ICU
Case Manager - Brackenridge Hospital Brown Schools Rehabilitation Hospital - Austin, TX
Director of Clinical Services and Nursing - Long Term Acute Care Specialty Hospital/Mariner Corp - Houston, TX
Chief Nursing Officer and Corporate Consultant, Long Term Acute Care St. David's Hospital North - Austin, TX
Case Manager Renal and Medical Units St. David's Rehabilitation Hospital - Austin, TX
Charge Nurse Traumatic Brain Injury, Spinal Cord Injury, and Pain Management Units Spinal Cord Injury
Charge Nurse Traumatic Brain Injury Charter Hospital of South Texas - Corpus Christi, TX
Charge Nurse Adolescent Emotional Disorders Unit (full time through January 1991 then PRN) London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Forensic Unit Victoria Hospital - London, ON
Nurse, Medical-Surgical, Oncology, Oncology ICU
A. ADMINISTRATIVE AND QUALITY POSITIONS City of Austin - Austin, TX
Quality Manager, Ryan White Program Seton Healthcare Network - Austin, TX
HealthCare Analyst/Sr. Coordinator Patient Safety ICU
Case Manager - Brackenridge Hospital Brown Schools Rehabilitation Hospital - Austin, TX
Director of Clinical Services and Nursing - Long Term Acute Care Specialty Hospital/Mariner Corp - Houston, TX
Chief Nursing Officer and Corporate Consultant, Long Term Acute Care St. David's Hospital North - Austin, TX
Case Manager Renal and Medical Units St. David's Rehabilitation Hospital - Austin, TX
Charge Nurse Traumatic Brain Injury, Spinal Cord Injury, and Pain Management Units Spinal Cord Injury
Charge Nurse Traumatic Brain Injury Charter Hospital of South Texas - Corpus Christi, TX
Charge Nurse Adolescent Emotional Disorders Unit (full time through January 1991 then PRN) London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Forensic Unit Victoria Hospital - London, ON
Nurse, Medical-Surgical, Oncology, Oncology ICU
Education:
Fanshawe College - London, ON
Diploma in Nursing University Of Western Ontario - London, ON
Bachelor of Arts
Diploma in Nursing University Of Western Ontario - London, ON
Bachelor of Arts
David Watts - Austin, TX
David Watts - Austin, TX
Work:
United Healthcare Group - Community and State
A. ADMINISTRATIVE AND QUALITY POSITIONS City of Austin - Austin, TX
Quality Manager, Ryan White Program Seton Healthcare Network - Austin, TX
HealthCare Analyst/Sr. Coordinator Patient Safety ICU
Case Manager - Brackenridge Hospital Brown Schools Rehabilitation Hospital - Austin, TX
Director of Clinical Services and Nursing - Long Term Acute Care Specialty Hospital/Mariner Corp - Houston, TX
Chief Nursing Officer and Corporate Consultant, Long Term Acute Care St. David's Hospital North - Austin, TX
Case Manager Renal and Medical Units St. David's Rehabilitation Hospital - Austin, TX
Charge Nurse Traumatic Brain Injury, Spinal Cord Injury, and Pain Management Units Spinal Cord Injury
Charge Nurse Traumatic Brain Injury Charter Hospital of South Texas - Corpus Christi, TX
Charge Nurse Adolescent Emotional Disorders Unit (full time through January 1991 then PRN) London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Forensic Unit London Psychiatric Hospital - London, ON
Nurse, Medical-Surgical, Oncology, Oncology ICU London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Admissions and Forensic Units
A. ADMINISTRATIVE AND QUALITY POSITIONS City of Austin - Austin, TX
Quality Manager, Ryan White Program Seton Healthcare Network - Austin, TX
HealthCare Analyst/Sr. Coordinator Patient Safety ICU
Case Manager - Brackenridge Hospital Brown Schools Rehabilitation Hospital - Austin, TX
Director of Clinical Services and Nursing - Long Term Acute Care Specialty Hospital/Mariner Corp - Houston, TX
Chief Nursing Officer and Corporate Consultant, Long Term Acute Care St. David's Hospital North - Austin, TX
Case Manager Renal and Medical Units St. David's Rehabilitation Hospital - Austin, TX
Charge Nurse Traumatic Brain Injury, Spinal Cord Injury, and Pain Management Units Spinal Cord Injury
Charge Nurse Traumatic Brain Injury Charter Hospital of South Texas - Corpus Christi, TX
Charge Nurse Adolescent Emotional Disorders Unit (full time through January 1991 then PRN) London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Forensic Unit London Psychiatric Hospital - London, ON
Nurse, Medical-Surgical, Oncology, Oncology ICU London Psychiatric Hospital - London, ON
Charge Nurse and Case Manager, Admissions and Forensic Units
Education:
Fanshawe College - London, ON
Diploma in Nursing University Of Western Ontario - London, ON
Bachelor of Arts
Diploma in Nursing University Of Western Ontario - London, ON
Bachelor of Arts
Principal At O'connell Robertson
Principal At O'connell Robertson
Position:
Principal at O'Connell Robertson
Location:
Austin, Texas Area
Industry:
Architecture & Planning
Work:
O'Connell Robertson
-
Principal
Chemical Mechanical Polishing (Cmp) Slurry For Polishing Copper Interconnects Which Use Tantalum-Based Barrier Layers
Chemical Mechanical Polishing (Cmp) Slurry For Polishing Copper Interconnects Which Use Tantalum-Based Barrier Layers
US Patent:
6001730, Dec 14, 1999
Filed:
Oct 20, 1997
Appl. No.:
8/954191
Inventors:
Janos Farkas - Austin TX
Rajeev Bajaj - Fremont CA
Melissa Freeman - Round Rock TX
David K. Watts - Austin TX
Sanjit Das - Austin TX
Rajeev Bajaj - Fremont CA
Melissa Freeman - Round Rock TX
David K. Watts - Austin TX
Sanjit Das - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 100
US Classification:
438627
Abstract:
A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
Method Of Making A Semiconductor Device Using Chemical-Mechanical Polishing Having A Combination-Step Process
Method Of Making A Semiconductor Device Using Chemical-Mechanical Polishing Having A Combination-Step Process
US Patent:
5985748, Nov 16, 1999
Filed:
Dec 1, 1997
Appl. No.:
8/980782
Inventors:
David K. Watts - Austin TX
Franklin D. Nkansah - Austin TX
John Mendonca - Austin TX
Franklin D. Nkansah - Austin TX
John Mendonca - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 214763
US Classification:
438622
Abstract:
A method of chemical-mechanical polishing of a semiconductor device utilizes a combination of polishing steps, including a first step using a first slurry containing an abrasive component (i. e. , mechanical component) and a chemical component (i. e. , chemical reactants), and a second polishing step using a second slurry having a reduced amount of the abrasive component. The method is carried out with respect to metal (39), such as copper, deposited on a dielectric layer (34) and the first polishing step is stopped before the entirety of the metal overlying the dielectric layer is removed. In one embodiment, the second slurry has no abrasive component.
Low Selectivity Chemical Mechanical Polishing (Cmp) Process For Use On Integrated Circuit Metal Interconnects
Low Selectivity Chemical Mechanical Polishing (Cmp) Process For Use On Integrated Circuit Metal Interconnects
US Patent:
6045435, Apr 4, 2000
Filed:
Aug 4, 1997
Appl. No.:
8/905757
Inventors:
Rajeev Bajaj - Austin TX
Subramoney Iyer - Austin TX
Thom Kobayashi - Austin TX
Jaime Saravia - Roundrock TX
Mark Fernandes - Austin TX
David K. Watts - Austin TX
Subramoney Iyer - Austin TX
Thom Kobayashi - Austin TX
Jaime Saravia - Roundrock TX
Mark Fernandes - Austin TX
David K. Watts - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
B24B 100
US Classification:
451 41
Abstract:
A method for polishing a metal layer (20) containing a combination of wide features (12), low density features (14), and high density features (18), is illustrated. A hydrophilic polish pad (24) having a shore D hardness of greater than 50 is used along with slurry (22) containing silica and an acidic based oxidizer such as oxadic acid in a chemical mechanical polishing (CMP) process. The result is less than 5:1 and preferably 1:1. This low selectivity results in the metal layer (20) being polished to a level below the surface of the surrounding oxide in a timed-controlled polish.
Method Of Chemical Mechanical Planarization Using A Water Rinse To Prevent Particle Contamination
Method Of Chemical Mechanical Planarization Using A Water Rinse To Prevent Particle Contamination
US Patent:
6071816, Jun 6, 2000
Filed:
Aug 29, 1997
Appl. No.:
8/921131
Inventors:
David K. Watts - Austin TX
Rajeev Bajaj - Fremont CA
Sanjit K. Das - Austin TX
Rajeev Bajaj - Fremont CA
Sanjit K. Das - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21302
US Classification:
438692
Abstract:
A method of chemical mechanical planarization of a semiconductor device provides a semiconductor device having a device front surface and a device back surface with the device front surface being a top surface of a second metal layer. A first planarizing step planarizes the device front surface with a first medium to expose a device second front surface, where the first medium comprises a first abrasive component and a first chemical solution. A rinsing step then rinses the device back surface with water. A second planarizing step then planarizes the device second front surface with a second medium where the second medium comprises a second abrasive component and a second chemical solution.
Chemical Mechanical Polishing (Cmp) Slurry For Copper And Method Of Use In Integrated Circuit Manufacture
Chemical Mechanical Polishing (Cmp) Slurry For Copper And Method Of Use In Integrated Circuit Manufacture
US Patent:
5897375, Apr 27, 1999
Filed:
Oct 20, 1997
Appl. No.:
8/954190
Inventors:
David Watts - Austin TX
Rajeev Bajaj - San Jose CA
Sanjit Das - Austin TX
Janos Farkas - Austin TX
Chelsea Dang - Plugerville TX
Melissa Freeman - Round Rock TX
Jaime A. Saravia - Round Rock TX
Jason Gomez - Austin TX
Lance B. Cook - Austin TX
Rajeev Bajaj - San Jose CA
Sanjit Das - Austin TX
Janos Farkas - Austin TX
Chelsea Dang - Plugerville TX
Melissa Freeman - Round Rock TX
Jaime A. Saravia - Round Rock TX
Jason Gomez - Austin TX
Lance B. Cook - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
B24B 100
US Classification:
438693
Abstract:
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H. sub. 2 O. sub. 2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
Process For Forming A Semiconductor Device
Process For Forming A Semiconductor Device
US Patent:
5935871, Aug 10, 1999
Filed:
Aug 22, 1997
Appl. No.:
8/916297
Inventors:
Janos Farkas - Austin TX
David Watts - Austin TX
Melissa Freeman - Round Rock TX
David Watts - Austin TX
Melissa Freeman - Round Rock TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2100
US Classification:
438693
Abstract:
A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In one particular embodiment, a solution having a pH greater than the isoelectric point of alumina particles is exposed to the surface of an interconnect material of a conductive layer (42) to passivate a portion of the interconnect material while changing the charge of the slurry particles (52) such that they are repelled away from the surface of the substrate and removed by the cleaning solution, or other cleaning processes.
Method Of Chemical Mechanical Planarization Using Copper Coordinating Ligands
Method Of Chemical Mechanical Planarization Using Copper Coordinating Ligands
US Patent:
6096652, Aug 1, 2000
Filed:
Nov 3, 1997
Appl. No.:
8/963438
Inventors:
David K. Watts - Austin TX
Janos Farkas - Austin TX
Jason Gomez - Austin TX
Chelsea Dang - Pflugerville TX
Janos Farkas - Austin TX
Jason Gomez - Austin TX
Chelsea Dang - Pflugerville TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2100
US Classification:
438692
Abstract:
A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).