DAVID D HENDRIX
Electrician at Duval St, Austin, TX
License number
Texas 288887
Expiration Date
Feb 2, 2018
Category
Apprentice Electrician
Address
Address
7302 Duval St APT 142, Austin, TX 78752
Phone
(469) 999-8138
Professional information
Implant Process Engineer At Spansion
Position:
Implant Process Engineer at Spansion
Location:
Austin, Texas Area
Industry:
Semiconductors
Work:
Spansion
since Oct 1994
-
Implant Process Engineer
Education:
Rice University 1985 - 1990
BSChE, BA, Chemical Engineering, Humanities
BSChE, BA, Chemical Engineering, Humanities
Interests:
Spanish
Electrostatic Lens Having Glassy Graphite Electrodes
US Patent:
6630677, Oct 7, 2003
Filed:
Aug 29, 2001
Appl. No.:
09/943570
Inventors:
Zhiyong Zhao - Austin TX
David Hendrix - Austin TX
David Hendrix - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01J 3712
US Classification:
250396R, 25049221
Abstract:
An electrostatic lens with glassy graphite electrodes for use in an ion implanter is disclosed. The graphite electrodes have been manufactured to be substantially smooth (glassy) such that irregularities on the surface grain of the graphite, for example peaks or apexes, are no longer present. In an embodiment, employing polished graphite electrostatic lens electrodes does not require the time-consuming conditioning operations under vacuum that are typically needed with conventional graphite electrodes, and thus offers the advantage of increased uptime for an ion implantation system. In addition, because surface irregularities are not present to serve as discharge points for electrostatic buildup, the use of glassy graphite electrodes as disclosed offers the advantage of electrostatic discharge reduction. Reduction of electrostatic discharge results in decreased particulate contamination from discharge events, as well as lessening of the probability of irreparable physical damage to implantation target material.
David Hendrix - Austin, TX
Work:
Brazos Electric Coopertive - Tolar, TX
High voltage lineman Tessco Utlities - Midland, TX
Substation Tech Design Electric - Dallas, TX
Apprentice Electrician
High voltage lineman Tessco Utlities - Midland, TX
Substation Tech Design Electric - Dallas, TX
Apprentice Electrician
Method And System For Dose Control During An Ion Implantation Process
US Patent:
6797967, Sep 28, 2004
Filed:
Feb 25, 2002
Appl. No.:
10/082567
Inventors:
Tom Tse - Austin TX
Zhiyong Zhao - Austin TX
David M. Hendrix - Austin TX
Zhiyong Zhao - Austin TX
David M. Hendrix - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G21K 500
US Classification:
25049221, 2504921, 2504922, 25049222, 2504923
Abstract:
A method is presented for compensating for the effects of charge neutralization in calculating the âtrueâ ion dose, i. e. , the dose assuming no changes of charge state of ions during an implantation process. An ion beam is generated under normal operating conditions, e. g. , stable vacuum exists, and no target is being implanted. At least one additional detector would be positioned in the target chamber, and a dose measurement conducted simultaneously with a measurement of the beam current with the Faraday, which is located outside of the charge neutralization region, to establish a reference ratio. A wafer is then placed at the target location, and simultaneous measurements made with the additional detector and Faraday, as before, to determine the ratio between the beam current and the detector during wafer implantation. Any drift from the reference ratio indicates the dose error due to charge neutralization from wafer outgassing during implantation. Software for controlling various parameters could be configured to use the ratio drift data to change the dose counter to compensate for the dose error due to charge neutralization.
Method And Apparatus For Detecting Ion Implant Induced Defects
US Patent:
6524869, Feb 25, 2003
Filed:
Feb 9, 2001
Appl. No.:
09/780178
Inventors:
Michael J. Satterfield - Round Rock TX
Laura A. Pressley - Austin TX
Terri A. Couteau - Rosansky TX
Daniel E. Sutton - Austin TX
Bryon K. Hance - Austin TX
David Hendrix - Austin TX
Laura A. Pressley - Austin TX
Terri A. Couteau - Rosansky TX
Daniel E. Sutton - Austin TX
Bryon K. Hance - Austin TX
David Hendrix - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 2166
US Classification:
438 14, 438 17
Abstract:
Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.
Electrostatic Discharge Depolarization Using High Density Plasma
US Patent:
6852990, Feb 8, 2005
Filed:
Jun 29, 2001
Appl. No.:
09/896381
Inventors:
Zhiyong Zhao - Austin TX, US
David Hendrix - Austin TX, US
David Hendrix - Austin TX, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01J061/00
US Classification:
2504922, 2504923, 361212, 361213
Abstract:
A method for electrostatic discharge depolarization is implemented. The buildup of charge on tool structures in fabrication tools for semiconductor processing may be expected to be of concern whenever high voltage is employed near the structure in a tool. The process herein includes selectively exposing the structure to a plasma for a selected time interval. The duration of the exposure time interval is sufficient to reduce the polarization of the structure whereby the forces due to the polarization do not interfere with the transport or movement of a wafer being processed.