DAVID CARL SHAVER
Pilots at Carlisle Pne Dr, Carlisle, MA

8324554, Dec 4, 2012

Mar 23, 2010

12/730037

David C. Shaver - Carlisle MA, US
Bernard B. Kosicki - Acton MA, US
Robert K. Reich - Tyngsboro MA, US
Dennis D Rathman - Ashland MA, US
Daniel R. Schuette - Arlington MA, US
Brian F. Aull - Cambridge MA, US

Massachusetts Institute of Technology - Cambridge MA

H01L 31/00

250214R, 2502141, 257431

Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

7858917, Dec 28, 2010

Apr 30, 2004

10/836896

Alvin Stern - Newton MA, US
Brian F. Aull - Cambridge MA, US
Bernard B. Kosicki - Acton MA, US
Robert K. Reich - Tyngsborough MA, US
Bradley J. Felton - Lowell MA, US
David C. Shaver - Carlisle MA, US
Andrew H. Loomis - Westford MA, US
Douglas J. Young - Stoneham MA, US

Massachusetts Institute of Technology - Cambridge MA

G01J 1/44, H01J 40/14, H03F 3/08

250214R, 2502081, 2502141, 348302, 348308

A photon-counting Geiger-mode avalanche photodiode intensity imaging array includes an array of pixels, each having an avalanche photodiode. A pixel senses an avalanche event and stores, in response to the sensed avalanche event, a single bit digital value therein. An array of accumulators are provided such that each accumulator is associated with a pixel. A row decoder circuit addresses a pixel row within the array of pixels. A bit sensing circuit converts a precharged capacitance into a digital value during read operations.

6965484, Nov 15, 2005

Jul 24, 2003

10/626440

David C. Shaver - Carlisle MA, US

Massachusetts Institute of Technology - Cambridge MA

G02B009/00, G02B009/08, G03B027/72

359738, 355 71

Optical imaging systems and methods use polarized illumination and a coordinated pupil filter to achieve high contrast. An imaging system includes a light source to generate light for illuminating an object having features aligned in a first direction and features aligned in a second direction, a lens for imaging the illuminated object onto a surface, a spatial selection device, such as a pupil filter, selective in a first mode of light corresponding to features of the illuminated object aligned in the first direction and selective in a second mode of light corresponding to features of the illuminated object aligned in a second direction, a polarization device optically coupled to the spatial selection device and selective in the first mode of s-polarized light corresponding to the first direction and selective in the second mode of s-polarized light corresponding to the second direction, and a controller for selecting operation in the first mode or in the second mode.

4639301, Jan 27, 1987

Apr 24, 1985

6/726713

John A. Doherty - Sudbury MA
Billy W. Ward - Rockport MA
David C. Shaver - Carlisle MA

Micrion Limited Partnership - Beverly MA

C23C 1400

20419231

An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

5362606, Nov 8, 1994

Aug 7, 1992

7/926971

Mark A. Hartney - Carlisle MA
John Melngailis - Newton MA
David C. Shaver - Carlisle MA

Massachusetts Institute of Technology - Cambridge MA

G03F 738

430315

A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.