DAVID CANDLAND MONK
Nursing at Country Club Dr, Mesa, AZ

6913941, Jul 5, 2005

Sep 9, 2002

10/238062

Gary J. O'Brien - Gilbert AZ, US
David J. Monk - Mesa AZ, US

Freescale Semiconductor, Inc. - Schaumburg IL

H01L021/00

438 48, 438 50, 438 52

A method for creating a MEMS structure is provided. In accordance with the method, a substrate () is provided having a sacrificial layer () disposed thereon and having a layer of silicon () disposed over the sacrificial layer. A first trench () is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region () enclosed by the first trench and a second region () exterior to the first trench. A first material () is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench () is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.

6352874, Mar 5, 2002

May 24, 1999

09/317734

Andrew C. McNeil - Scottsdale AZ
David J. Monk - Mesa AZ
Bishnu P. Gogoi - Scottsdale AZ

Motorola Inc. - Schaumburg IL

H01L 2128

438 53, 438251

A method of manufacturing a sensor includes forming a first electrode ( ), forming a sacrificial layer ( ) over the first electrode, and forming a layer ( ) over the sacrificial layer where a second electrode ( ) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity ( ) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post ( ) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.

6472243, Oct 29, 2002

Dec 11, 2000

09/734473

Bishnu P. Gogoi - Scottsdale AZ
David J. Monk - Mesa AZ
David W. Odle - Apache Junction AZ
Kevin D. Neumann - Chandler AZ
John E. Schmiesing - Tempe AZ
Andrew C. McNeil - Scottsdale AZ
Richard J. August - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 2100

438 50, 438 22, 438 24, 438 45, 438 48, 438 53, 438199, 257414, 257415

A capacitive pressure sensor ( ) utilizes a diaphragm ( ) that is formed along with forming gates ( ) of active devices on the same semiconductor substrate ( ).

6769319, Aug 3, 2004

Jul 9, 2001

09/901366

William G. McDonald - Scottsdale AZ
David J. Monk - Mesa AZ
Slobodan Petrovic - Scottsdale AZ

Freescale Semiconductor, Inc. - Austin TX

G01D 1124

738661, 73431

A component includes a housing ( ) at least partially defining a cavity ( ), a sensor element ( ) located in the cavity, and a support member ( ) located over the cavity, located over at least a portion of the housing, and having a hole ( ) over the cavity. The component also includes a filter ( ) located over the support member and located over the hole in the support member.

5889211, Mar 30, 1999

Apr 3, 1995

8/415900

Theresa A. Maudie - Phoenix AZ
David J. Monk - Mesa AZ
Timothy S. Savage - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

G01L 904

73720

A media compatible microsensor structure (11) for sensing an environmental condition in a harsh media includes an inorganic protective film (17) covering portions of the structure that will be exposed to the harsh media. In one embodiment, the microsensor structure (11) includes a microsensor package (12), a microsensor device (16) bonded to the microsensor package (12), a leadframe (13), a connective wire (14) connecting the microsensor device (16) to the leadframe (13), and an inorganic protective film (17) formed on all or portion of the exposed surfaces of the structure.

6134941, Oct 24, 2000

Mar 23, 1998

9/046024

Jerry D. Cripe - Tempe AZ
Theresa A. Maudie - Phoenix AZ
Michael P. Menchio - Mesa AZ
Dennis M. Stanerson - Scottsdale AZ
David J. Monk - Mesa AZ
James E. Kasarskis - Scottsdale AZ
Charles L. Reed - Phoenix AZ

Motorola, Inc. - Schaumburg IL

G01M 1900, G01N 3700

73 102

An apparatus for testing sensors in a media includes a chamber portion (240) for holding the sensors, tanks (320, 340) for supplying the media to the chamber portion (240) and coupled in parallel to the chamber portion (240), a pressure generator (310) coupled to the tanks (320, 340), and a heat exchanger (323, 324) adjacent to the tanks (320, 340). The media is simultaneously heated to different temperatures and pressurized to different pressures in the tanks (320, 340). Then, the media is delivered from the tanks (320, 340) to the chamber portion (240), and the sensors detect the media at the different temperatures and pressures.

6156585, Dec 5, 2000

Feb 2, 1998

9/017494

Bishnu P. Gogoi - Scottsdale AZ
David J. Monk - Mesa AZ

Motorola, Inc. - Schaumburg IL

H01L 2100

438 48

A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).

7437951, Oct 21, 2008

Aug 21, 2007

11/842776

William G. McDonald - Scottsdale AZ, US
David J. Monk - Mesa AZ, US

Freescale Semiconductor, Inc. - Austin TX

G01F 1/44, G01F 1/37

7386163, 7386152

A flowmeter is provided that comprises a leadframe assembly () and a body () disposed at least partially around the leadframe assembly (). The body () has a flow passage therethrough that comprises a first channel () having a first port (), a second channel () having a second port (), and a flow altering element () disposed within the second channel (). First and second pressure sensors ( and ) are disposed within the body () and coupled to the leadframe assembly () for measuring a first pressure within the first channel () and a second pressure within the second channel (), respectively. An integrated circuit (), which is coupled to the leadframe assembly (), to the first pressure sensor (), and to the second pressure sensor (), is configured to determine the rate of flow through the flow passage from the first pressure and the second pressure.

2002005, May 2, 2002

Oct 28, 1999

09/429099

SLOBODAN PETROVIC - SCOTTSDALE AZ, US
HOLLY JEAN MILLER - SCOTTSDALE AZ, US
DAVID J. MONK - MESA AZ, US

G01L007/08

073/715000

A physical sensor component includes a housing () having a cavity (), a pressure sensor device () mounted in the cavity of the housing, and a chemically selective and physically selective filter () overlying the cavity of the housing and separated from the pressure sensor device.