DAVID BIRD SMATHERS
Pilots at Kirkham Rd, Columbus, OH

7063773, Jun 20, 2006

Aug 17, 2001

10/344783

Eugene Y. Ivanov - Grove City OH, US
David B. Smathers - Columbus OH, US
John E. Poole - Grove City OH, US

Tosoh SMD, Inc. - Grove City OH

C23C 14/34

20419212, 20419213, 20429812, 20429813, 20429803

A preferred sputter target assembly (′) comprises a target (′), a backing plate (′) bonded to the target (′) along an interface (′) and dielectric particles (′) between the target (′) and the backing plate (′). A preferred method for manufacturing the sputter target assembly (′) comprises the steps of providing the target (′) and the backing plate (′); distributing the dielectric particles (′) between mating surfaces () of the target (′) and the backing plate (′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (′) to the backing plate (′) along the mating surfaces (). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (); causing the sputter target assembly () to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly () to detect the electromagnetic signal.

2006007, Apr 13, 2006

Sep 12, 2003

10/526702

Robert Bailey - Grove City OH, US
Melvin Holcomb - Grove City OH, US
David Smathers - Columbus OH, US
Timothy Wiemels - Powell OH, US

Tosoh SMD, Inc. - Grove City OH

C23C 14/00

204298210, 204298130

A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface () that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome () end of the sputter target () is comprised of a first crystallographic orientation and sidewalls () of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (α, β1, β2) in the target.

7708868, May 4, 2010

May 30, 2006

11/443232

David B. Smathers - Columbus OH, US
Melvin K. Holcomb - Grove City OH, US
Eric Land - Columbus OH, US

Tosoh SMD, Inc. - Grove City OH

B23K 20/00, B21D 22/16, C23C 14/32

20429812, 20429809, 20429813, 21912114, 72 57, 72347

A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.

8037727, Oct 18, 2011

May 29, 2009

12/455159

Robert S. Bailey - Grove City OH, US
Melvin K. Holcomb - Grove City OH, US
David B. Smathers - Columbus OH, US
Timothy Wiemels - Powell OH, US

Tosoh SMD, Inc. - Grove City OH

B21D 22/16, C23C 14/32, B23K 20/00

72 60, 72347, 761071, 20429812, 20429809

A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

2014003, Feb 6, 2014

Feb 9, 2012

13/984961

Weifang Miao - Columbus OH, US
David B. Smathers - Columbus OH, US
Eugene Y. Ivanov - Grove City OH, US
Erich Theado - Columbus OH, US
Robert S. Bailey - Grove City OH, US
Jeff Hart - Columbus OH, US

TOSOH SMD, INC - Grove city OH

C23C 14/34

20429813, 228159

A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

2008002, Feb 7, 2008

Oct 7, 2005

11/658112

David Smathers - Columbus OH, US
Robert Bailey - Grove City OH, US

TOSOH SMD, INC. - GROVE CITY OH

F16J 15/06

277641000

A vacuum seal () having an O-ring () between two mating parts () (). One of the mating parts has a groove () configured to receive the O-ring (). The groove () has a modified dovetail shape with at least one side wall () having a compound slope formed with a first portion () forming an angle of less than 90 degrees with respect to a base wall () and a second portion () extending substantially perpendicular to the sealing face () of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width (W) of the groove mouth () is at least 94% of the diameter (D) of the O-ring.

7638200, Dec 29, 2009

Aug 27, 2003

10/527513

David B. Smathers - Columbus OH, US
Frank S. Valent - Galloway OH, US
Michael J. Regan - Corvallis OR, US

Tosoh SMD, Inc. - Grove City OH
Hewlett-Packard Company - Corvalis OR

C04B 35/587, B28B 1/00, B32B 13/04

428446, 501 972, 501 973, 264683

A composition and method for fabricating high-density Ta—Al—O, Ta—Si—N, and W—Si—N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, SiN, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.

2009016, Jun 25, 2009

Feb 24, 2009

12/380154

David B. Smathers - Columbus OH, US
Robert S. Bailey - Grove City OH, US

Tosoh SMD, Inc. - Grove City OH

F16J 15/02

277642

A vacuum seal having an O-ring between two mating parts. One of the mating parts has a groove configured to receive the O-ring. The groove has a modified dovetail shape with at least one side wall having a compound slope formed with a first portion forming an angle of less than 90 degrees with respect to a base wall and a second portion extending substantially perpendicular to the sealing face of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width of the groove mouth is at least 94% of the diameter of the O-ring.

7850829, Dec 14, 2010

Feb 2, 2006

11/883459

David B. Smathers - Columbus OH, US

Tosoh SMD, Inc. - Grove City OH

C23C 14/00, C23C 14/32, C25B 9/00, C25B 11/00, C25B 13/00

20419212, 20429812

A magnetron sputtering target having at least one expansion groove strategically located on the target surface such that, during magnetron sputtering, contamination of the target surface due to separation and de-lamination of re-deposited sputtered particles from the target surface is reduced. The sputter target comprises a re-deposited layer having secondary cracks and a characteristic distance between cracks for supporting the inherent material stress associated with the thermal expansion of the target. The expansion groove is then positioned substantially within the characteristic distance to reduce separation and de-lamination of the re-deposited layer from the target surface.

2009000, Jan 8, 2009

Feb 26, 2007

12/223499

Eugene Y. Ivanov - Grove City OH, US
Yongwen Yuan - Dublin OH, US
David B. Smathers - Columbus OH, US
Ronald G. Jordan - Sugar Grove OH, US

Tosoh SMD, Inc. - Grove City OH

H01L 23/48, C22C 21/04

257771, 420537, 257E2301

The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.